Abstract: Disclosed herein are correcting methods and devices for lithography hotspots of the post-routing layout, used for correcting lithography hotspots detected in the post-routing layout. At least one two-dimensional pattern of changeable size or position of the number of hotspots in the local area is selected and adjusted, so that the simulation value of the aerial image intensity of various local areas is optimized. The simulation value of the aerial image intensity is derived through calculation with respect to a set of optical simulation model cells that can be determined by the numerical value of distribution of the aerial image intensity of a number of basic two-dimensional patterns. After adjustment, the aerial image intensity of the local area can be calculated with respect to a set of optical simulation model cells, and a number of cells in the simulation model cells are selected to synthesize the two-dimensional pattern after the change.

Abstract: A method of performing double patterning (DPT) conflict repairs is described. In this method, even cycles adjacent to odd cycles in a layout can be identified (also called adjacent even/odd cycles herein). The identifying can include forming graph constructs of the layout. Route guidances for break-link operations and split-node operations can be prioritized for the adjacent even/odd cycles. A list including the route guidances for the break-link operations and the split-node operations can be generated. The list can be ordered based on the prioritizing.

Abstract: A method of performing double patterning (DPT) conflict repairs is described. In this method, even cycles adjacent to odd cycles in a layout can be identified (also called adjacent even/odd cycles herein). The identifying can include forming graph constructs of the layout. Route guidances for break-link operations and split-node operations can be prioritized for the adjacent even/odd cycles. A list including the route guidances for the break-link operations and the split-node operations can be generated. The list can be ordered based on the prioritizing.

Abstract: Disclosed herein are correcting methods and devices for lithography hotspots of the post-routing layout, used for correcting lithography hotspots detected in the post-routing layout. At least one two-dimensional pattern of changeable size or position of the number of hotspots in the local area is selected and adjusted, so that the simulation value of the aerial image intensity of various local areas is optimized. The simulation value of the aerial image intensity is derived through calculation with respect to a set of optical simulation model cells that can be determined by the numerical value of distribution of the aerial image intensity of a number of basic two-dimensional patterns. After adjustment, the aerial image intensity of the local area can be calculated with respect to a set of optical simulation model cells, and a number of cells in the simulation model cells are selected to synthesize the two-dimensional pattern after the change.

Abstract: One embodiment of the present invention provides a system that verifies an integrated circuit (IC) chip layout. During operation, the system receives a layout of an IC chip after the layout has gone through a place-and-route operation. Next, the system performs a lithography compliance checking (LCC) operation on the layout to detect lithography hotspots within the layout, wherein each lithography hotspot is associated with a local routing pattern around the lithography hotspot. Next, for each detected lithography hotspot, the system compares the associated local routing pattern against a hotspot database to determine if the local routing pattern matches an entry in the hotspot database, which stores a set of known hotspot configurations. If so, the system corrects the lithography hotspot using correction guidance information associated with the hotspot configuration stored in the hotspot database.

Abstract: One embodiment of the present invention provides a system that verifies an integrated circuit (IC) chip layout. During operation, the system receives a layout of an IC chip after the layout has gone through a place-and-route operation. Next, the system performs a lithography compliance checking (LCC) operation on the layout to detect lithography hotspots within the layout, wherein each lithography hotspot is associated with a local routing pattern around the lithography hotspot. Next, for each detected lithography hotspot, the system compares the associated local routing pattern against a hotspot database to determine if the local routing pattern matches an entry in the hotspot database, which stores a set of known hotspot configurations. If so, the system corrects the lithography hotspot using correction guidance information associated with the hotspot configuration stored in the hotspot database.