Patents by Inventor Yang-Suk Kim

Yang-Suk Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE
    Publication number: 20240332424
    Abstract: A semiconductor device including first fin-shaped patterns in a first region of a substrate and spaced apart from each other in a first direction, second fin-shaped patterns in a second region of the substrate and spaced apart from each other in a second direction, a first field insulating film on the substrate and covering sidewalls of the first fin-shaped patterns, a second field insulating film on the substrate and covering sidewalls of the second fin-shaped patterns, a first source/drain pattern on the first field insulating film, connected to the first fin-shaped patterns, and including a first silicon-germanium pattern, and a second source/drain pattern on the second field insulating film, connected to the second fin-shaped patterns, and including a second silicon-germanium pattern, the second source/drain pattern and the second field insulating film defining one or more first air gaps therebetween may be provided.
    Type: Application
    Filed: June 12, 2024
    Publication date: October 3, 2024
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Yang XU, Nam Kyu CHO, Seok Hoon KIM, Yong Seung KIM, Pan Kwi PARK, Dong Suk SHIN, Sang Gil LEE, Si Hyung LEE
  • Semiconductor device
    Patent number: 12040402
    Abstract: A semiconductor device including first fin-shaped patterns in a first region of a substrate and spaced apart from each other in a first direction, second fin-shaped patterns in a second region of the substrate and spaced apart from each other in a second direction, a first field insulating film on the substrate and covering sidewalls of the first fin-shaped patterns, a second field insulating film on the substrate and covering sidewalls of the second fin-shaped patterns, a first source/drain pattern on the first field insulating film, connected to the first fin-shaped patterns, and including a first silicon-germanium pattern, and a second source/drain pattern on the second field insulating film, connected to the second fin-shaped patterns, and including a second silicon-germanium pattern, the second source/drain pattern and the second field insulating film defining one or more first air gaps therebetween may be provided.
    Type: Grant
    Filed: March 9, 2022
    Date of Patent: July 16, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yang Xu, Nam Kyu Cho, Seok Hoon Kim, Yong Seung Kim, Pan Kwi Park, Dong Suk Shin, Sang Gil Lee, Si Hyung Lee
  • Method of analyzing a bio chip
    Publication number: 20070143031
    Abstract: Disclosed is a system for analyzing a bio chip using Gene Ontology (hereinafter referred to “GO”) and a method thereof.
    Type: Application
    Filed: February 6, 2007
    Publication date: June 21, 2007
    Inventors: Yang-Suk Kim, Jung-Uk Hur, Sung-Geun Lee
  • System for analyzing bio chips using gene ontology and a method thereof
    Publication number: 20060234244
    Abstract: Disclosed is a system for analyzing a bio chip using Gene Ontology(hereinafter referred to “GO”) and a method thereof.
    Type: Application
    Filed: August 23, 2004
    Publication date: October 19, 2006
    Inventors: Yang-Suk Kim, Jung-Uk Hur, Sung-Geun Lee