Abstract: Semiconductor devices with high area efficiency are described. Such a semiconductor device can be positioned within an isolation structure, and include diodes coupled to the isolation structure. In this manner, the semiconductor devices utilize an area, which may be otherwise left as an inactive space (or dead space) to achieve a smaller footprint. Further, the semiconductor devices may include multiple fingers of doped regions arranged horizontally, vertically, or a combination of both. The fingers of doped regions form diodes connected in parallel using metal lines that are parallelized to facilitate flowing large amounts of current. The parallelized metal lines with reduced lengths ameliorate issues associated with parasitic resistance of the metal lines during ESD or surge events.

Abstract: The present disclosure generally relates to an insulated gate bipolar junction transistor (IGBJT). In an example, a semiconductor device includes a semiconductor substrate, a first well in the semiconductor substrate, a second well in the semiconductor substrate, a gate electrode over the semiconductor substrate, a source region in the second well, a collector region in the second well, an emitter region in the first well, a drain region in the first well, and a silicide on the source region and the collector region. The first well, source region, and drain region are doped with a first conductivity type. The second well, collector region, and emitter region are doped with a second conductivity type opposite from the first conductivity type. The gate electrode extends laterally over the first well and the second well. The gate electrode is laterally between the source region and the emitter region.

Abstract: Semiconductor devices with high area efficiency are described. Such a semiconductor device can be positioned within an isolation structure, and include diodes coupled to the isolation structure. In this manner, the semiconductor devices utilize an area, which may be otherwise left as an inactive space (or dead space) to achieve a smaller footprint. Further, the semiconductor devices may include multiple fingers of doped regions arranged horizontally, vertically, or a combination of both. The fingers of doped regions form diodes connected in parallel using metal lines that are parallelized to facilitate flowing large amounts of current. The parallelized metal lines with reduced lengths ameliorate issues associated with parasitic resistance of the metal lines during ESD or surge events.

Abstract: According to an embodiment, a bipolar transistor is disclosed for Electrostatic discharge (ESD) management in integrated circuits. The bipolar transistor enables vertical current flow in a bipolar transistor cell configured for ESD protection. The bipolar transistor includes a selectively embedded P-type floating buried layer (PBL). The floating P-region is added in a standard NPN cell. During an ESD event, the base of the bipolar transistor extends to the floating P-region with a very small amount of current. The PBL layer can provide more holes to support the current resulting in decreased holding voltage of the bipolar transistor. With the selective addition of floating P-region, the current scalability of the bipolar transistor at longer pulse widths can be significantly improved.

Abstract: According to an embodiment, a bipolar transistor is disclosed for Electrostatic discharge (ESD) management in integrated circuits. The bipolar transistor enables vertical current flow in a bipolar transistor cell configured for ESD protection. The bipolar transistor includes a selectively embedded P-type floating buried layer (PBL). The floating P-region is added in a standard NPN cell. During an ESD event, the base of the bipolar transistor extends to the floating P-region with a very small amount of current. The PBL layer can provide more holes to support the current resulting in decreased holding voltage of the bipolar transistor. With the selective addition of floating P-region, the current scalability of the bipolar transistor at longer pulse widths can be significantly improved.

Abstract: According to an embodiment, a bipolar transistor is disclosed for Electrostatic discharge (ESD) management in integrated circuits. The bipolar transistor enables vertical current flow in a bipolar transistor cell configured for ESD protection. The bipolar transistor includes a selectively embedded P-type floating buried layer (PBL). The floating P-region is added in a standard NPN cell. During an ESD event, the base of the bipolar transistor extends to the floating P-region with a very small amount of current. The PBL layer can provide more holes to support the current resulting in decreased holding voltage of the bipolar transistor. With the selective addition of floating P-region, the current scalability of the bipolar transistor at longer pulse widths can be significantly improved.

Abstract: An apparatus includes: a first SCR device having a first source terminal coupled to a signal terminal, a first body terminal coupled to the first source terminal, a first gate terminal coupled to the signal terminal, and a first drain terminal; a second SCR device having a second drain terminal coupled to the first drain terminal, a second gate terminal coupled to a reference voltage terminal; and a second source terminal coupled to the reference voltage terminal. The apparatus also includes: a third SCR device having a third source terminal coupled to the signal terminal, a third gate terminal coupled to the first gate terminal, and a third drain terminal; a first capacitor coupled between the third drain terminal and the second gate terminal; and a second capacitor coupled between the second gate terminal and the reference voltage terminal.

Abstract: An apparatus includes: a first SCR device having a first source terminal coupled to a signal terminal, a first body terminal coupled to the first source terminal, a first gate terminal coupled to the signal terminal, and a first drain terminal; a second SCR device having a second drain terminal coupled to the first drain terminal, a second gate terminal coupled to a reference voltage terminal; and a second source terminal coupled to the reference voltage terminal. The apparatus also includes: a third SCR device having a third source terminal coupled to the signal terminal, a third gate terminal coupled to the first gate terminal, and a third drain terminal; a first capacitor coupled between the third drain terminal and the second gate terminal; and a second capacitor coupled between the second gate terminal and the reference voltage terminal.

Abstract: According to an embodiment, a bipolar transistor is disclosed for Electrostatic discharge (ESD) management in integrated circuits. The bipolar transistor enables vertical current flow in a bipolar transistor cell configured for ESD protection. The bipolar transistor includes a selectively embedded P-type floating buried layer (PBL). The floating P-region is added in a standard NPN cell. During an ESD event, the base of the bipolar transistor extends to the floating P-region with a very small amount of current. The PBL layer can provide more holes to support the current resulting in decreased holding voltage of the bipolar transistor. With the selective addition of floating P-region, the current scalability of the bipolar transistor at longer pulse widths can be significantly improved.