Abstract: A method for controlling a robotic walking assistant that includes a wheeled base having one or more wheels, two handles and a foldable seat that are coupled to the wheeled base, includes: detecting whether two hands of a user have held the two handles of the robotic walking assistant; receiving a command from the user to select an operation mode in response to detection of the two hands holding the two handles; controlling the wheeled base to move in response to a walking assistive mode being selected; providing resistance to at least one of the one or more wheels according to selection of the user, in response to a walking training mode being selected; and locking the one or more wheels in response to a static training mode being selected.

Abstract: Semiconductor devices with high area efficiency are described. Such a semiconductor device can be positioned within an isolation structure, and include diodes coupled to the isolation structure. In this manner, the semiconductor devices utilize an area, which may be otherwise left as an inactive space (or dead space) to achieve a smaller footprint. Further, the semiconductor devices may include multiple fingers of doped regions arranged horizontally, vertically, or a combination of both. The fingers of doped regions form diodes connected in parallel using metal lines that are parallelized to facilitate flowing large amounts of current. The parallelized metal lines with reduced lengths ameliorate issues associated with parasitic resistance of the metal lines during ESD or surge events.

Abstract: According to an embodiment, a bipolar transistor is disclosed for Electrostatic discharge (ESD) management in integrated circuits. The bipolar transistor enables vertical current flow in a bipolar transistor cell configured for ESD protection. The bipolar transistor includes a selectively embedded P-type floating buried layer (PBL). The floating P-region is added in a standard NPN cell. During an ESD event, the base of the bipolar transistor extends to the floating P-region with a very small amount of current. The PBL layer can provide more holes to support the current resulting in decreased holding voltage of the bipolar transistor. With the selective addition of floating P-region, the current scalability of the bipolar transistor at longer pulse widths can be significantly improved.

Abstract: According to an embodiment, a bipolar transistor is disclosed for Electrostatic discharge (ESD) management in integrated circuits. The bipolar transistor enables vertical current flow in a bipolar transistor cell configured for ESD protection. The bipolar transistor includes a selectively embedded P-type floating buried layer (PBL). The floating P-region is added in a standard NPN cell. During an ESD event, the base of the bipolar transistor extends to the floating P-region with a very small amount of current. The PBL layer can provide more holes to support the current resulting in decreased holding voltage of the bipolar transistor. With the selective addition of floating P-region, the current scalability of the bipolar transistor at longer pulse widths can be significantly improved.

Abstract: According to an embodiment, a bipolar transistor is disclosed for Electrostatic discharge (ESD) management in integrated circuits. The bipolar transistor enables vertical current flow in a bipolar transistor cell configured for ESD protection. The bipolar transistor includes a selectively embedded P-type floating buried layer (PBL). The floating P-region is added in a standard NPN cell. During an ESD event, the base of the bipolar transistor extends to the floating P-region with a very small amount of current. The PBL layer can provide more holes to support the current resulting in decreased holding voltage of the bipolar transistor. With the selective addition of floating P-region, the current scalability of the bipolar transistor at longer pulse widths can be significantly improved.

Abstract: An apparatus includes: a first SCR device having a first source terminal coupled to a signal terminal, a first body terminal coupled to the first source terminal, a first gate terminal coupled to the signal terminal, and a first drain terminal; a second SCR device having a second drain terminal coupled to the first drain terminal, a second gate terminal coupled to a reference voltage terminal; and a second source terminal coupled to the reference voltage terminal. The apparatus also includes: a third SCR device having a third source terminal coupled to the signal terminal, a third gate terminal coupled to the first gate terminal, and a third drain terminal; a first capacitor coupled between the third drain terminal and the second gate terminal; and a second capacitor coupled between the second gate terminal and the reference voltage terminal.

Abstract: An apparatus includes: a first SCR device having a first source terminal coupled to a signal terminal, a first body terminal coupled to the first source terminal, a first gate terminal coupled to the signal terminal, and a first drain terminal; a second SCR device having a second drain terminal coupled to the first drain terminal, a second gate terminal coupled to a reference voltage terminal; and a second source terminal coupled to the reference voltage terminal. The apparatus also includes: a third SCR device having a third source terminal coupled to the signal terminal, a third gate terminal coupled to the first gate terminal, and a third drain terminal; a first capacitor coupled between the third drain terminal and the second gate terminal; and a second capacitor coupled between the second gate terminal and the reference voltage terminal.

Abstract: According to an embodiment, a bipolar transistor is disclosed for Electrostatic discharge (ESD) management in integrated circuits. The bipolar transistor enables vertical current flow in a bipolar transistor cell configured for ESD protection. The bipolar transistor includes a selectively embedded P-type floating buried layer (PBL). The floating P-region is added in a standard NPN cell. During an ESD event, the base of the bipolar transistor extends to the floating P-region with a very small amount of current. The PBL layer can provide more holes to support the current resulting in decreased holding voltage of the bipolar transistor. With the selective addition of floating P-region, the current scalability of the bipolar transistor at longer pulse widths can be significantly improved.