Abstract: A device includes a first memory subarray, a first modulation circuit, a second memory subarray, a second modulation circuit and a control signal generator. The first modulation circuit is coupled to the first memory subarray. The second memory subarray is located between the first memory subarray and the first modulation circuit along a direction. The second modulation circuit is coupled to the second memory subarray. The control signal generator is configured to generate a first control signal to trigger the first modulation circuit according to a first length of the first memory subarray along the direction, and configured to generate a second control signal to trigger the second modulation circuit according to a second length of the second memory subarray along the direction.

Abstract: Provided herein are compound-linker constructs and antibody-drug-conjugates of compounds of formula (Y-1), (Y-2), (Y-3), (A), (B), (C), I, II, III, IV or V that are useful as modulators of STING (Stimulator of Interferon Genes). Also provided are synthesis, compositions and uses of such compound-linker constructs and antibody-drug-conjugates.

Abstract: The present invention relates to a semiconductor structure and a method for forming the same. The semiconductor structure comprises a substrate, a channel layer, a barrier layer, a source electrode, a gate electrode, a drain electrode, and a cap layer. The channel layer is disposed on the substrate, the barrier layer is disposed on the channel layer, and the source electrode, the gate electrode, and the drain electrode are disposed on the barrier layer. Except the regions directly above the source electrode and the drain electrode, the cap layer covers the source electrode and the drain electrode.

Abstract: A memory device, comprising: a first driving circuit configured to provide a first current signal to a first node according to a decoder signal; a second driving circuit configured to provide a second current signal to a second node according to the decoder signal; and a modulating circuit coupled to the first node and the second node, configured to transmit each of the first current signal and the second current signal to a reference voltage terminal. A method is also disclosed herein. A method is also disclosed herein.

Abstract: A device includes a first memory subarray, a first modulation circuit, a second memory subarray, a second modulation circuit and a control signal generator. The first modulation circuit is coupled to the first memory subarray. The second memory subarray is located between the first memory subarray and the first modulation circuit along a direction. The second modulation circuit is coupled to the second memory subarray. The control signal generator is configured to generate a first control signal to trigger the first modulation circuit according to a first length of the first memory subarray along the direction, and configured to generate a second control signal to trigger the second modulation circuit according to a second length of the second memory subarray along the direction.

Abstract: A memory device includes a first transistor, a second transistor and a third transistor. The first transistor is coupled to a first word line at a first node. The second transistor is coupled to a second word line different from the first word line at a second node. A control terminal of the first transistor is coupled to a control terminal of the second transistor. The third transistor is coupled between a ground and a third node which is coupled to each of the first node and the second node. In a layout view, each of the first transistor and the second transistor has a first length along a direction. The first transistor, the third transistor and second transistor are arranged in order along the direction. A method is also disclosed herein.

Abstract: Compounds of general Formula S-1, S-2, S-3 and their pharmaceutically acceptable salts, that may be useful as inductors of type I interferon production, specifically as STING active agents, are provided. Also provided are synthesis, compositions, and uses of such compounds.

Abstract: A device includes a memory array, bit line pairs, word lines, a modulation circuit and a control signal generator. The memory array has bit cells arranged in rows and columns. Each bit line pair is connected to a respective column of bit cells. Each word line is connected to a respective row of bit cells. The modulation circuit is coupled with at least one bit line pair. The control signal generator is coupled with the modulation circuit. The control signal generator includes a tracking wiring with a tracking length positively correlated with a depth distance of the word lines. The control signal generator is configured to produce a control signal, switching to a first voltage level for a first time duration in reference with the tracking length, for controlling the modulation circuit. A method of controlling aforesaid device is also disclosed.

Abstract: Compounds of general Formula I, II, III, IV, V and their pharmaceutically acceptable salts, that may be useful as inductors of type I interferon production, specifically as STING active agents, are provided. Also provided are synthesis, compositions, and uses of such compounds.

Abstract: A device includes a memory array, bit line pairs, word lines, a modulation circuit and a control signal generator. The memory array has bit cells arranged in rows and columns. Each bit line pair is connected to a respective column of bit cells. Each word line is connected to a respective row of bit cells. The modulation circuit is coupled with at least one bit line pair. The control signal generator is coupled with the modulation circuit. The control signal generator includes a tracking wiring with a tracking length positively correlated with a depth distance of the word lines. The control signal generator is configured to produce a control signal, switching to a first voltage level for a first time duration in reference with the tracking length, for controlling the modulation circuit. A method of controlling aforesaid device is also disclosed.

Abstract: A memory device includes a first transistor, a second transistor and a third transistor. The first transistor is coupled to a first word line at a first node. The second transistor is coupled to a second word line different from the first word line at a second node. A control terminal of the first transistor is coupled to a control terminal of the second transistor. The third transistor is coupled between a ground and a third node which is coupled to each of the first node and the second node. In a layout view, each of the first transistor and the second transistor has a first length along a direction. The first transistor, the third transistor and second transistor are arranged in order along the direction. A method is also disclosed herein.

Abstract: Systems and methods for remote human motor training. The method comprises generating visual guidance data based on first motion data received from a first client computing device, transmitting the visual guidance data to a second client computing device, receiving second motion data from the second client computing device, generating haptic guidance data based on a comparison of the second motion data with the first motion data, and transmitting the haptic guidance data to the second client computing device.

Abstract: The present invention provides compounds of Formula (I): or stereoisomers, tautomers, or pharmaceutically acceptable salts or solvates thereof, wherein all the variables are as defined herein. These compounds are antagonists to ?V-containing integrins. This invention also relates to pharmaceutical compositions comprising these compounds and methods of treating a disease, disorder, or condition associated with dysregulation of ?v-containing integrins, such as pathological fibrosis, transplant rejection, cancer, osteoporosis, and inflammatory disorders, by using the compounds and pharmaceutical compositions.

Abstract: A device includes a first memory subarray, a first modulation circuit, a second memory subarray, a second modulation circuit and a control signal generator. The first modulation circuit is coupled to the first memory subarray. The second memory subarray is located between the first memory subarray and the first modulation circuit along a direction. The second modulation circuit is coupled to the second memory subarray. The control signal generator is configured to generate a first control signal to trigger the first modulation circuit according to a first length of the first memory subarray along the direction, and configured to generate a second control signal to trigger the second modulation circuit according to a second length of the second memory subarray along the direction.

Abstract: A memory device includes a first transistor, a second transistor and a third transistor. The first transistor is coupled to a first word line at a first node. The second transistor is coupled to a second word line different from the first word line at a second node. A control terminal of the first transistor is coupled to a control terminal of the second transistor. The third transistor is coupled between a ground and a third node which is coupled to each of the first node and the second node. In a layout view, each of the first transistor and the second transistor has a first length along a direction. The first transistor, the third transistor and second transistor are arranged in order along the direction. A method is also disclosed herein.

Abstract: A nuclear magnetic resonance (NMR) system-based substance measurement method, including: acquiring several echo signals of an NMR pulse sequence varying in echo spacing from a substance to be measured followed by processing to obtain several signals varying in transverse relaxation and diffusion attenuation; and fitting, in combination with the prior knowledge, the signals to obtain the diffusion coefficient, transverse relaxation time or/and content weight of individual components of the substance to be measured. This application further provides a substance measurement system including a console, a magnet module, and an NMR system.

Abstract: A nuclear magnetic resonance (NMR) system-based substance measurement method, including: acquiring several echo signals of an NMR pulse sequence varying in echo spacing from a substance to be measured followed by processing to obtain several signals varying in transverse relaxation and diffusion attenuation; and fitting, in combination with the prior knowledge, the signals to obtain the diffusion coefficient, transverse relaxation time or/and content weight of individual components of the substance to be measured. This application further provides a substance measurement system including a console, a magnet module, and an NMR system.

Abstract: A memory device includes a first transistor, a second transistor and a third transistor. The first transistor is coupled to a first word line at a first node. The second transistor is coupled to a second word line different from the first word line at a second node. A control terminal of the first transistor is coupled to a control terminal of the second transistor. The third transistor is coupled between a ground and a third node which is coupled to each of the first node and the second node. In a layout view, each of the first transistor and the second transistor has a first length along a direction. The first transistor, the third transistor and second transistor are arranged in order along the direction. A method is also disclosed herein.

Abstract: A memory device includes a word line driver. The word line driver is coupled through word lines to an array of bit cells. The word line driver includes a first driving circuit, a second driving circuit and a modulating circuit. The first driving circuit and the second driving circuit are configured to select a word line. The modulating circuit is coupled through the selected word line to the first driving circuit and the second driving circuit, and is configured to modulate at least one signal transmitted through the selected word line. The first driving circuit and the second driving circuit are further configured to charge the selected word line to generate a first voltage signal and a second voltage signal at two positions of the selected word line. The first voltage signal is substantially the same as the second voltage signal. A method is also disclosed herein.

Abstract: A device includes a memory array, bit line pairs, word lines, a modulation circuit and a control signal generator. The memory array has bit cells arranged in rows and columns. Each bit line pair is connected to a respective column of bit cells. Each word line is connected to a respective row of bit cells. The modulation circuit is coupled with at least one bit line pair. The control signal generator is coupled with the modulation circuit. The control signal generator includes a tracking wiring with a tracking length positively correlated with a depth distance of the word lines. The control signal generator is configured to produce a control signal, switching to a first voltage level for a first time duration in reference with the tracking length, for controlling the modulation circuit. A method of controlling aforesaid device is also disclosed.