Abstract: A method for fabricating a power semiconductor device having a trench gate structure is provided. An epitaxial layer of a first conductivity type having a low concentration and a body region of a second conductivity type are sequentially formed on a semiconductor substrate of the first conductivity type having a high concentration. An oxide layer pattern is formed on the body region. A first trench is formed using the oxide layer pattern as an etching mask to perforate a predetermined portion of the body region having a first thickness. A body contact region of the second conductivity type having a high concentration is formed to surround the first trench by impurity ion implantation using the oxide layer pattern as an ion implantation mask. First spacer layers are formed to cover the sidewalls of the first trench and the sidewalls of the oxide layer pattern.

Abstract: A level shifter for generating a plurality of output voltages having a plurality of levels to interface a low voltage circuit with a high voltage circuit is provided. The level shifter includes a first level shifter for receiving an input signal and a first power supply and outputting a first output voltage having a level the same as that of a ground voltage or the first power supply according to the input signal, a first control signal having a value in which the first output voltage is inverted, and a second control signal having the same value as that of the first output voltage, and an output voltage generator for receiving the first power supply and a second power supply having a level different from that of the first power supply and outputting a second output voltage having a level equivalent to either the first power supply or the second power supply according to the first and second control signals.

Abstract: A method for fabricating a power semiconductor device having a trench gate structure is provided. An epitaxial layer of a first conductivity type having a low concentration and a body region of a second conductivity type are sequentially formed on a semiconductor substrate of the first conductivity type having a high concentration. An oxide layer pattern is formed on the body region. A first trench is formed using the oxide layer pattern as an etching mask to perforate a predetermined portion of the body region having a first thickness. A body contact region of the second conductivity type having a high concentration is formed to surround the first trench by impurity ion implantation using the oxide layer pattern as an ion implantation mask. First spacer layers are formed to cover the sidewalls of the first trench and the sidewalls of the oxide layer pattern.