Abstract: A wavelength conversion device and a light source system, including: a substrate; a first light-emitting portion disposed on the substrate, wherein the first light-emitting portion includes a first light guide area and a counterweight area provided on the same layer as the first light guide area, the first light guide area being used for guiding first light, and the counterweight area being used for making the weight distribution of the wavelength conversion device substantially uniform; and a second light-emitting portion provided on the substrate on the same side as the first light-emitting portion, the second light-emitting portion including a conversion area, and the conversion area being used to convert at least a part of excitation light into excited light for emission when the excitation light is received.

Abstract: The present disclosure provides a semiconductor device 1, comprising: a housing comprising an internal space; at least one semiconductor chip 20 arranged inside the housing; and a separator 13 arranged inside the housing and configured to separate the internal space of the housing into a first chamber 11 and a second chamber 12, wherein the at least one semiconductor chip 20 is arranged within the first chamber 11; wherein the separator 13 comprises a deformable portion 15, and the deformable portion 15 is configured to deform when a pressure difference between the first and second chambers 11, 12 exceeds a threshold differential pressure or a temperature at the deformable portion 15 exceeds a threshold temperature, so as to transform the first chamber 11 from a hermetically sealed chamber to an open chamber in fluid communication with the second chamber 12.

Abstract: There is provided a semiconductor device 1, comprising: a housing comprising: a first housing electrode 4 and a second housing electrode 5 arranged at opposite sides of the housing, and a tubular housing element 8 arranged between the first and second housing electrodes 4, 5 and configured to electrically isolate the first and second housing electrodes 4, 5 from one another; at least one semiconductor chip 20 arranged within the housing between the first and second housing electrodes 4, 5; and a metal explosion shield 12 arranged within the housing, wherein the metal explosion shield 12 is configured to extend into a space formed between the at least one semiconductor chip 20 and the tubular housing element 8 such that the metal explosion shield surrounds the at least one semiconductor chip 20.

Abstract: There is provided a semiconductor device 1, comprising: a housing comprising a housing electrode 4; and at least one semiconductor chip 20 arranged within the housing; wherein the housing electrode 4 comprises a deformable portion 15, and the deformable portion 15 is configured to deform when a pressure difference between an interior and an exterior of the housing exceeds a threshold differential pressure or a temperature at the deformable portion exceeds a threshold temperature, so as to transform the housing from a hermetically sealed housing to an open housing in fluid communication with the exterior.

Abstract: There is provided a semiconductor device 1, comprising: a housing comprising a first housing electrode 4 and a second housing electrode 5 arranged at opposite sides of the housing; and a plurality of semiconductor units 30 arranged within the housing between the first and second housing electrodes 4, 5 and coupled to at least one of the first and second housing electrodes 4, 5 by pressure, wherein the plurality of semiconductor units 30 comprise a first semiconductor unit 30-1 and a second semiconductor unit 30-2 neighbouring the first semiconductor unit 30-1; wherein the first and/or second housing electrode comprises a plurality of pillars 10, and the plurality of pillars comprise a first pillar 10-1 and a second pillar 10-2 electrically coupled to the first and second semiconductor units 30-1, 30-2, respectively, and wherein a surface 16 of the first housing electrode 4 comprises a groove 15, and a width W1 of the groove 15 is less than a spacing S2 between the first pillar 10-1 and the second pillar 10-2.

Abstract: There is provided a semiconductor device 100, comprising: at least one semiconductor chip 5, and a structure 2 thermally coupled to the at least one semiconductor chip 5, wherein the structure 2 comprises a surface located within an interior of the semiconductor device, and the surface comprises a groove 12; and a sensor 16 comprising an optical fibre 13 passing through the groove 12, wherein the sensor 16 is configured to sense a temperature of the at least one semiconductor chip 5.

Abstract: A cell structure of a silicon carbide MOSFET device, comprising a first conductivity type drift region (3) located above a first conductivity type substrate (2). A main trench is provided in the surface of the first conductivity type drift region (3); a Schottky metal (4) is provided on the bottom and sidewalls of the main trench; a second conductivity type well region (7) is provided in the surface of the first conductivity type drift region (3) and around the main trench; a source region (8) is provided in the surface of the well region (7); a source metal (10) is provided above the source region (8); a gate insulating layer (6) and a gate (5) split into two parts are provided above the sides of the source region (8), the well region (7), and the first conductivity type drift region (3) close to the main trench.

Abstract: We describe herein a high voltage semiconductor device comprising a power semiconductor device portion (100) and a temperature sensing device portion (185). The temperature sensing device portion comprises: an anode region (140), a cathode region (150), a body region (160) in which the anode region and the cathode region are formed. The temperature sensing device portion also comprises a semiconductor isolation region (165) in which the body region is formed, the semiconductor isolation region having an opposite conductivity type to the body region, the semiconductor isolation region being formed between the power semiconductor device portion and the temperature sensing device portion.

Abstract: We herein describe a semiconductor device sub-assembly comprising at least two power semiconductor devices and a contact of a first type. A first power semiconductor device is located on a first side of the contact of a first type, and a second power semiconductor device is located on a second side of the contact of a first type, where the second side is opposite to the first side.

Abstract: The disclosure relates to a method and a system for predicting the operation time of sparse matrix vector multiplication. The method comprises constructing a convolutional neural network comprising an input layer, a feature processing layer, a data splicing layer and an output layer for outputting prediction results. The method further comprises acquiring a plurality of groups of sparse matrices with known sparse matrix vector multiplication operation time as sample data, inputting the sample data into the convolutional neural network to train the convolutional neural network, and inputting the sparse matrix to be classified into the trained convolutional neural network to realize the prediction of the operation time of sparse matrix vector multiplication.

Abstract: A multiphase fluorescent ceramic and a preparation method therefor. Spinel is provided in a multiphase fluorescent ceramic comprising an alumina matrix and fluorescent particles, the spinel is distributed between alumina grain boundaries, and the exciting light irradiated into the multiphase fluorescent ceramic can be scattered, thereby facilitating further improvement in the luminous efficiency of the multiphase fluorescent ceramic.

Abstract: Provided is a wavelength conversion apparatus that includes a metal substrate; and a light-emitting ceramic layer. The light-emitting ceramic layer is used for absorbing excitation light and emitting excited light having a wavelength different from that of the excitation light. A metal reflective layer and a silica gel layer are stacked between the metal substrate and the light-emitting ceramic layer, and the reflective layer is used for reflecting the excited light and an unconverted part of the excitation light. The wavelength conversion device can reduce heat generated in the wavelength conversion apparatus, while realizing an aim of emitting excited light having a high illumination intensity in the wavelength conversion apparatus.

Abstract: A method and device for simulating microstructure evolution of a material based on solution in an exponential time-difference format. The method includes: establishing a reaction rate theory model for substance defects, wherein the model is expressed with equations that comprise linear terms having coefficients characterized with matrixes; and iteratively solving the equations by using an exponential time-difference format, wherein during the iterative solving, the linear terms with exponential powers of the matrixes as the coefficients are integrated. Since a rate theory is not limited by spatial-temporal scales, the advantages of the rate theory can be significantly reflected when the microstructure evolution is simulated under a high damage dose condition; and then, the equations are solved by using the exponential time-difference format, with a solved result better in accuracy and higher in precision.

Abstract: A wavelength conversion device and a light source system, including: a substrate; a first light-emitting portion disposed on the substrate, wherein the first light-emitting portion includes a first light guide area and a counterweight area provided on the same layer as the first light guide area, the first light guide area being used for guiding first light, and the counterweight area being used for making the weight distribution of the wavelength conversion device substantially uniform; and a second light-emitting portion provided on the substrate on the same side as the first light-emitting portion, the second light-emitting portion including a conversion area, and the conversion area being used to convert at least a part of excitation light into excited light for emission when the excitation light is received.

Abstract: A light reflecting material, a reflecting layer and a preparation method therefor; the light reflecting material comprises glass powder particles (1), diffuser particles, ultrafine nano particles and an organic carrier; the particle size of the glass powder particles (1) is ?5 ?m, the particle size of the diffuser particles is 0.1 ?m to 0.2 ?m, and the particle size of the ultra-fine nano particles is 0.01 ?m to 0.05 ?m. The glass powder particles (1), diffuser particles and ultra-fine nano particles the particle sizes of which decrease progressively in sequence by one order of magnitude are used as the raw materials of the reflecting layer, without deceasing the adhesion between the reflecting layer and a substrate, the surface area within the reflecting layer that may cause reflection or refraction is increased to obtain better reflectivity.

Abstract: We describe herein a high voltage semiconductor device comprising a power semiconductor device portion (100) and a temperature sensing device portion (185). The temperature sensing device portion comprises: an anode region (140), a cathode region (150), a body region (160) in which the anode region and the cathode region are formed. The temperature sensing device portion also comprises a semiconductor isolation region (165) in which the body region is formed, the semiconductor isolation region having an opposite conductivity type to the body region, the semiconductor isolation region being formed between the power semiconductor device portion and the temperature sensing device portion.

Abstract: The present disclosure provides method, apparatus and system for 3-dimension (3D) face tracking. The method for 3D face tracking may comprise: obtaining a 2-dimension (2D) face image; performing a local feature regression on the 2D face image to determine 3D face representation parameters corresponding to the 2D face image; and generating a 3D facial mesh and corresponding 2D facial landmarks based on the determined 3D face representation parameters. The present disclosure may improve tracking accuracy and reduce memory cost, and accordingly may be effectively applied in broader application scenarios.

Abstract: Provided is a wavelength conversion apparatus that includes a metal substrate; and a light-emitting ceramic layer. The light-emitting ceramic layer is used for absorbing excitation light and emitting excited light having a wavelength different from that of the excitation light. A metal reflective layer and a silica gel layer are stacked between the metal substrate and the light-emitting ceramic layer, and the reflective layer is used for reflecting the excited light and an unconverted part of the excitation light. The wavelength conversion device can reduce heat generated in the wavelength conversion apparatus, while realizing an aim of emitting excited light having a high illumination intensity in the wavelength conversion apparatus.

Abstract: The present disclosure provides method, apparatus and system for 3-dimension (3D) face tracking. The method for 3D face tracking may comprise: obtaining a 2-dimension (2D) face image; performing a local feature regression on the 2D face image to determine 3D face representation parameters corresponding to the 2D face image; and generating a 3D facial mesh and corresponding 2D facial landmarks based on the determined 3D face representation parameters. The present disclosure may improve tracking accuracy and reduce memory cost, and accordingly may be effectively applied in broader application scenarios.

Abstract: A wavelength converter is provided. The wavelength converter comprises a light emitting-reflecting layer, and the light emitting-reflecting layer comprises a wavelength converting material, aluminum oxide, titanium oxide and an adhesive, which not only reduces the heat generated by the light propagation in the light emitting-reflecting layer, but also improves the density and heat dissipation performance of the wavelength converter. Thus, the wavelength converter is more applicable to a high-power excitation light source. A fluorescent color wheel and a light-emitting device comprising the wavelength converter are also provided.