Abstract: Embodiments of apparatus and method for chemical mechanical polishing (CMP) are disclosed. In an example, an apparatus for CMP includes a platen, a slurry supply, and at least one scraping fixture. The platen is configured to rotate a pad thereon about a central axis of the pad. The slurry supply is configured to supply a slurry onto the pad while the pad rotates. The at least one scraping fixture is configured to scrape the slurry off the pad when the slurry travels a distance between the slurry supply and the at least one scraping fixture in a circumferential direction of the pad as the pad rotates.

Abstract: Embodiments of 3D memory devices with a structurally-reinforced semiconductor plug and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A dielectric stack is formed on a substrate. The dielectric stack includes a plurality of interleaved dielectric layers and sacrificial layers. An opening extending vertically through the dielectric stack is formed. A shallow recess is formed by removing a part of a sacrificial layer abutting a sidewall of the opening. The sacrificial layer is at a lower portion of the dielectric stack. A semiconductor plug is formed at a lower portion of the opening. A part of the semiconductor plug protrudes into the shallow recess. A channel structure is formed above and in contact with the semiconductor plug in the opening. A memory stack including a plurality of conductor/dielectric layer pairs is formed by replacing, with a plurality of conductor layers, the sacrificial layers in the dielectric stack.

Abstract: Embodiments of apparatus and method for chemical mechanical polishing (CMP) are disclosed. In an example, an apparatus for CMP includes a platen, a slurry supply, and at least one scraping fixture. The platen is configured to rotate a pad thereon about a central axis of the pad. The slurry supply is configured to supply a slurry onto the pad while the pad rotates. The at least one scraping fixture is configured to scrape the slurry off the pad when the slurry travels a distance between the slurry supply and the at least one scraping fixture in a circumferential direction of the pad as the pad rotates.

Abstract: Embodiments of 3D memory devices with a structurally-reinforced semiconductor plug and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A dielectric stack is formed on a substrate. The dielectric stack includes a plurality of interleaved dielectric layers and sacrificial layers. An opening extending vertically through the dielectric stack is formed. A shallow recess is formed by removing a part of a sacrificial layer abutting a sidewall of the opening. The sacrificial layer is at a lower portion of the dielectric stack. A semiconductor plug is formed at a lower portion of the opening. A part of the semiconductor plug protrudes into the shallow recess. A channel structure is formed above and in contact with the semiconductor plug in the opening. A memory stack including a plurality of conductor/dielectric layer pairs is formed by replacing, with a plurality of conductor layers, the sacrificial layers in the dielectric stack.

Abstract: A chemical etching apparatus and methods of using are disclosed. An apparatus used for chemical etching includes a bath designed to hold a first liquid. A liquid supply pipe runs along a bottom portion of the bath. The liquid supply pipe has a first plurality of openings along a length of the liquid supply pipe along the bottom portion of the bath. A gas supply pipe runs along the bottom portion of the bath. The gas supply pipe has a second plurality of openings along a length of the gas supply pipe along the bottom portion of the bath. The liquid supply pipe introduces a second liquid into the first liquid via the first plurality of openings and the gas supply pipe introduces a gas into the first liquid via the second plurality of openings.

Abstract: The present disclosure describes methods and structures for three-dimensional memory devices. The methods include providing a bottom substrate and forming a plurality of doped layers over the bottom substrate. The plurality of doped layers has a total thickness in a thickness range such that a top surface of the plurality of doped layers is substantially flat and a doping concentration of each of the plurality of doped layers is substantially uniform along a direction substantially perpendicular to the top surface of the plurality of doped layers.

Abstract: A technique operates data storage equipment. The technique involves, during a first time period and while processing circuitry performs host I/O operations on behalf of a set of hosts, performing a data identification operation which provides a data identification result identifying particular data which is routinely accessed by the processing circuitry. The technique further involves, during a second time period after the first time period and in response to the data identification result, copying the particular data from secondary storage to an extension cache which forms part of primary storage to pre-fetch the particular data from the secondary storage for subsequent use by the processing circuitry. The technique further involves, during a third time period after the second time period and while the processing circuitry performs further host I/O operations on behalf of the set of hosts, accessing the particular data from the extension cache.