Patents by Inventor Yangda Zhang
Yangda Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11195854Abstract: Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.Type: GrantFiled: February 6, 2020Date of Patent: December 7, 2021Assignee: Micron Technology, Inc.Inventors: Jie Li, James Mathew, Kunal Shrotri, Luan C. Tran, Gordon A. Haller, Yangda Zhang, Hongpeng Yu, Minsoo Lee
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Publication number: 20200176471Abstract: Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.Type: ApplicationFiled: February 6, 2020Publication date: June 4, 2020Applicant: Micron Technology, Inc.Inventors: Jie Li, James Mathew, Kunal Shrotri, Luan C. Tran, Gordon A. Haller, Yangda Zhang, Hongpeng Yu, Minsoo Lee
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Patent number: 10580792Abstract: Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.Type: GrantFiled: August 21, 2018Date of Patent: March 3, 2020Assignee: Micron Technology, Inc.Inventors: Jie Li, James Mathew, Kunal Shrotri, Luan C. Tran, Gordon A. Haller, Yangda Zhang, Hongpeng Yu, Minsoo Lee
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Publication number: 20180358378Abstract: Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.Type: ApplicationFiled: August 21, 2018Publication date: December 13, 2018Applicant: Micron Technology, Inc.Inventors: Jie Li, James Mathew, Kunal Shrotri, Luan C. Tran, Gordon A. Haller, Yangda Zhang, Hongpeng Yu, Minsoo Lee
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Patent number: 10083984Abstract: Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.Type: GrantFiled: August 17, 2017Date of Patent: September 25, 2018Assignee: Micron Technology, Inc.Inventors: Jie Li, James Mathew, Kunal Shrotri, Luan C. Tran, Gordon A. Haller, Yangda Zhang, Hongpeng Yu, Minsoo Lee
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Publication number: 20170365617Abstract: Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.Type: ApplicationFiled: August 17, 2017Publication date: December 21, 2017Inventors: Jie Li, James Mathew, Kunal Shrotri, Luan C. Tran, Gordon A. Haller, Yangda Zhang, Hongpeng Yu, Minsoo Lee
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Patent number: 9773805Abstract: Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.Type: GrantFiled: June 20, 2016Date of Patent: September 26, 2017Assignee: Micron Technology, Inc.Inventors: Jie Li, James Mathew, Kunal Shrotri, Luan C. Tran, Gordon A. Haller, Yangda Zhang, Hongpeng Yu, Minsoo Lee