Abstract: A flip-chip semiconductor-on-insulator die includes a substrate layer, an active layer, an insulator layer between the substrate layer and the active layer, a first metal layer, and a first via layer between the active layer and the first metal layer. The die at least first and second contact pads and a transistor including a first terminal formed within the active layer. A first portion of the first terminal falls within a footprint of the first contact pad and a second portion of the first terminal falls within a footprint of the second contact pad.

Abstract: The present application relates to creamer comprising vegetable lipids, casein, maltose, phosphates, and allulose.

Abstract: A curable composition or a thermal interface material exhibiting low adhesion force to a predetermined adherend while having a low density as well as exhibiting a high thermal conductivity is provided. It also has excellent flame retardant properties, and exhibits ejection properties and thixotropy suitable for processes in a state where halogen flame retardants or phosphorus-based flame retardants are not used, or the use ratio thereof is minimized.

Abstract: A method of forming a semiconductor device includes forming a mold structure on a substrate, forming a first mask layer having a deposition thickness on the mold structure and patterning the first mask layer to form first mask openings which expose the mold structure. The mold structure is etched to form holes that penetrate the mold structure. The first mask layer is thinned to form mask portions having thickness smaller than the deposition thickness. Conductive patterns are formed to fill the holes and the first mask openings. The first mask layer including the mask portions is etched to expose the mold structure. The conductive patterns include protrusions. A chemical mechanical polishing process is performed to remove the protrusions of the conductive patterns.

Abstract: A method of forming a semiconductor device includes forming a mold structure on a substrate, forming a first mask layer having a deposition thickness on the mold structure and patterning the first mask layer to form first mask openings which expose the mold structure. The mold structure is etched to form holes that penetrate the mold structure. The first mask layer is thinned to form mask portions having thickness smaller than the deposition thickness. Conductive patterns are formed to fill the holes and the first mask openings. The first mask layer including the mask portions is etched to expose the mold structure. The conductive patterns include protrusions. A chemical mechanical polishing process is performed to remove the protrusions of the conductive patterns.

Abstract: A method of forming a semiconductor device, includes: forming a design pattern on a substrate, wherein the design pattern protrudes from the substrate; forming a filling layer on the substrate, wherein the filling layer at least partially covers the design pattern; forming a polishing resistance pattern adjacent to the design pattern in the filling layer using a laser irradiation process and/or an ion implantation process; and removing the filling layer using a chemical mechanical polishing (CMP) process to expose the design pattern.

Abstract: Provided are a chemical mechanical polishing (CMP) slurry composition and a method of fabricating a semiconductor device using the same. The chemical mechanical polishing (CMP) slurry composition includes abrasive particles, a first cationic compound which comprises at least any one of an amino acid, a polyalkylene glycol, a polymer polysaccharide to which a glucosamine compound is bonded, and a polymer containing an amine group, a second cationic compound which comprises an organic acid, and a nonionic compound which comprises polyetheramine.

Abstract: A semiconductor device including a direct contact and a bit line in a cell array region and a gate electrode structure in a peripheral circuit region, and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a substrate including a cell array region including a first active region and a peripheral circuit region including a second active region, a first insulating layer on the substrate, the first insulating layer including contact holes exposing the first active region, a direct contact in the contact holes, wherein a direct contact is connected to the first active region, a bit line connected to the direct contact in the cell array region and extending in a first direction, and a gate insulating layer and a gate electrode structure, wherein a dummy conductive layer including substantially the same material as the direct contact is in the peripheral circuit region.

Abstract: A semiconductor device including a direct contact and a bit line in a cell array region and a gate electrode structure in a peripheral circuit region, and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a substrate including a cell array region including a first active region and a peripheral circuit region including a second active region, a first insulating layer on the substrate, the first insulating layer including contact holes exposing the first active region, a direct contact in the contact holes, wherein a direct contact is connected to the first active region, a bit line connected to the direct contact in the cell array region and extending in a first direction, and a gate insulating layer and a gate electrode structure, wherein a dummy conductive layer including substantially the same material as the direct contact is in the peripheral circuit region.

Abstract: Disclosed is a poultice capable of rapidly curing an affected part of a patient's body and of enhancing a curative value by increasing an infiltration efficiency of medicine into a hypodermic tissue of the affected part with the aid of a low-frequency electro therapy. Both surfaces of compress sheets of the poultice are coated with predetermined skin-adhesive medicines adapted to cure an affected part of a patient's body. A thin film is attached to lower surfaces of the compress sheets. The thin film can be detached from the lower surfaces of the compress sheets during use of the poultice. An attaching sheet for attaching the poultice to the affected part of the patient's body is located on upper surfaces of the compress sheets. A pair of conductive layers are coated on a lower surface of the attaching sheet, which is opposite to the upper surfaces of the compress sheets. A low-frequency oscillator for applying a low-frequency energy into the compress sheets is installed between the conductive layers.

Abstract: A method of developing a screen of a cathode ray tube includes the steps of establishing an uniform electrostatic charge on selected areas of an inner surface of a panel with a predetermined pattern, rotating a nozzle to a predetermined angle with respect to the inner surface of a panel, and moving the rotated nozzle backwards and forwards while spraying a dry-powdered and electrically charged screen structure material on the selected areas of the inner surface of the panel.