Abstract: The present invention belongs to the technical field of petroleum exploitation engineering, and discloses a 3D modeling method for pore-filling hydrate sediment based on a CT image. Indoor remolding rock cores or in situ site rock cores without hydrate can be scanned by CT; a sediment matrix image stack and a pore image stack are obtained by gray threshold segmentation; then, a series of pore-filling hydrate image stacks with different saturations are constructed through image morphological processing of the pore image stack such as erosion, dilation and image subtraction operation; and a series of digital rock core image stacks of the pore-filling hydrate sediment with different saturations are formed through image subtraction operation and splicing operation to provide a relatively real 3D model for the numerical simulation work of the basic physical properties of a reservoir of natural gas hydrate.

Abstract: The present disclosure relates to the technical field of wastewater treatment, and provides a wastewater treatment method and apparatus based on hydrate-based water vapor adsorption. The apparatus includes a wastewater evaporation zone, a hydrate formation zone, a hydrate decomposition zone, and a data acquisition and control system. Rising water vapor and condensed water formed during evaporation of wastewater at normal temperature react with a hydrate former on a cooling wall surface to form a hydrate, continuous evaporation of the wastewater is promoted, the hydrate is scraped off to a collecting zone below by a scraper after being formed, and the hydrate is decomposed into fresh water, thereby realizing wastewater treatment. The present disclosure provides a method for treating complex wastewater containing a plurality of pollutants, where water vapor is consumed to form the hydrate to promote wastewater evaporation, and water obtained from the decomposition does not contain pollutants theoretically.

Abstract: The present invention discloses a hydrate energy-storage temperature-control material and a preparation method therefor. The material includes a refrigerant hydrate and a cross-linked polymer. The preparation method comprises the following steps: first, preparing a refrigerant hydrate by using a high-pressure reactor, and conducting grinding, crushing and sieving to obtain hydrate particles; then, uniformly spraying polytetrafluoroethylene suspended ultrafine powder onto the surface of the hydrate particles by using an electrostatic spraying device, and putting the hydrate particles into a plasma instrument to modify polytetrafluoroethylene so as to allow free radicals to be formed on the polytetrafluoroethylene powder surface; finally, subjecting monomers to graft polymerization with the free radicals on the polytetrafluoroethylene surface under the irradiation of a high-pressure mercury lamp of UV lighting system to stabilize the structure of the material, preparing a final product.

Abstract: The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the BCD high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the BCD process.

Abstract: The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the BCD high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the BCD process.

Abstract: The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the BCD high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the BCD process.

Abstract: The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the BCD high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the BCD process.