Patents by Inventor YANGKUI LIN

YANGKUI LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating an NMOS transistor
    Patent number: 8728894
    Abstract: A method for fabricating an NMOS transistor includes providing a substrate; forming a gate dielectric layer structure on the substrate and forming a gate electrode on the gate dielectric layer structure. The method further includes performing a fluorine ion implantation below the gate dielectric layer and an annealing process in an atmosphere comprising hydrogen or hydrogen plasma. The method also includes forming a source region and a drain region on both sides of the gate electrode before or after the fluorine ion implantation.
    Type: Grant
    Filed: June 28, 2011
    Date of Patent: May 20, 2014
    Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Yangkui Lin, Zhihao Chen
  • METHOD FOR FABRICATING AN NMOS TRANSISTOR
    Publication number: 20120214286
    Abstract: A method for fabricating an NMOS transistor includes providing a substrate; forming a gate dielectric layer structure on the substrate and forming a gate electrode on the gate dielectric layer structure. The method further includes performing a fluorine ion implantation below the gate dielectric layer and an annealing process in an atmosphere comprising hydrogen or hydrogen plasma. The method also includes forming a source region and a drain region on both sides of the gate electrode before or after the fluorine ion implantation.
    Type: Application
    Filed: June 28, 2011
    Publication date: August 23, 2012
    Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: YANGKUI LIN, Zhihao Chen