Patents by Inventor Yangkuo Zhao

Yangkuo Zhao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11929716
    Abstract: The disclosure provides a Sense Amplifier (SA), a memory and a method for controlling the SA, and relates to the technical field of semiconductor memories. The SA includes: an amplifier module; an offset voltage storage unit electrically connected to the amplifier module and configured to store an offset voltage of the amplifier module in an offset elimination stage of the SA; and a load compensation unit electrically connected to the amplifier module and configured to compensate a difference between loads of the amplifier module in an amplification stage of the SA. The disclosure may improve an accuracy of reading data of the SA.
    Type: Grant
    Filed: September 13, 2021
    Date of Patent: March 12, 2024
    Assignees: ANHUI UNIVERSITY, CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Xiulong Wu, Li Zhao, Yangkuo Zhao, Jun He, Xin Li, Zhan Ying, Kanyu Cao, Wenjuan Lu, Chunyu Peng, Zhiting Lin, Junning Chen
  • Patent number: 11894047
    Abstract: The present disclosure provides a sense amplifier, a memory, and a method for controlling a sense amplifier, relating to the technical field of semiconductor memories. The sense amplifier comprises: an amplification module; and an offset voltage storage unit electrically connected to the amplification module; wherein, in an offset cancellation stage of the sense amplifier, the sense amplifier is configured to comprise a current mirror structure to store an offset voltage of the amplification module in an offset voltage storage unit. The present disclosure can realize the offset cancellation of the sense amplifier.
    Type: Grant
    Filed: December 25, 2020
    Date of Patent: February 6, 2024
    Assignees: CHANGXIN MEMORY TECHNOLOGIES, INC., ANHUI UNIVERSITY
    Inventors: Chunyu Peng, Yangkuo Zhao, Wenjuan Lu, Xiulong Wu, Zhiting Lin, Junning Chen, Xin Li, Rumin Ji, Jun He, Zhan Ying
  • Patent number: 11869624
    Abstract: A sense amplifier includes: an amplification circuit, configured to read data of a memory cell on a first bit line or a second bit line; and a first offset voltage storage cell and a second offset voltage storage cell, respectively and electrically connected to the amplification circuit, wherein in a case where the data in the memory cell on the first bit line is read, in an offset elimination stage of the sense amplifier, the sense amplifier is configured to store an offset voltage of the sense amplifier in the first offset voltage storage cell; and in a case where the data in the memory cell on the second bit line is read, in the offset elimination stage of the sense amplifier, the sense amplifier is configured to store the offset voltage of the sense amplifier in the second offset voltage storage cell.
    Type: Grant
    Filed: September 13, 2021
    Date of Patent: January 9, 2024
    Assignees: CHANGXIN MEMORY TECHNOLOGIES, INC., ANHUI UNIVERSITY
    Inventors: Wenjuan Lu, Yangkuo Zhao, Jun He, Xin Li, Zhan Ying, Kanyu Cao, Chunyu Peng, Xiulong Wu, Zhiting Lin, Junning Chen
  • Publication number: 20230058436
    Abstract: The present disclosure provides a sense amplifier, a memory, and a method for controlling a sense amplifier, relating to the technical field of semiconductor memories. The sense amplifier comprises: an amplification module; and an offset voltage storage unit electrically connected to the amplification module; wherein, in an offset cancellation stage of the sense amplifier, the sense amplifier is configured to comprise a current mirror structure to store an offset voltage of the amplification module in an offset voltage storage unit. The present disclosure can realize the offset cancellation of the sense amplifier.
    Type: Application
    Filed: December 25, 2020
    Publication date: February 23, 2023
    Inventors: Chunyu PENG, Yangkuo ZHAO, Wenjuan LU, Xiulong WU, Zhiting LIN, Junning CHEN, Xin LI, Rumin JI, Jun HE, Zhan YING
  • Publication number: 20220028436
    Abstract: A sense amplifier includes: an amplification circuit, configured to read data of a memory cell on a first bit line or a second bit line; and a first offset voltage storage cell and a second offset voltage storage cell, respectively and electrically connected to the amplification circuit, wherein in a case where the data in the memory cell on the first bit line is read, in an offset elimination stage of the sense amplifier, the sense amplifier is configured to store an offset voltage of the sense amplifier in the first offset voltage storage cell; and in a case where the data in the memory cell on the second bit line is read, in the offset elimination stage of the sense amplifier, the sense amplifier is configured to store the offset voltage of the sense amplifier in the second offset voltage storage cell.
    Type: Application
    Filed: September 13, 2021
    Publication date: January 27, 2022
    Inventors: Wenjuan Lu, Yangkuo Zhao, Jun He, Xin Li, Zhan Ying, Kanyu Cao, Chunyu Peng, Xiulong Wu, Zhiting Lin, Junning Chen
  • Publication number: 20220029586
    Abstract: The disclosure provides a Sense Amplifier (SA), a memory and a method for controlling the SA, and relates to the technical field of semiconductor memories. The SA includes: an amplifier module; an offset voltage storage unit electrically connected to the amplifier module and configured to store an offset voltage of the amplifier module in an offset elimination stage of the SA; and a load compensation unit electrically connected to the amplifier module and configured to compensate a difference between loads of the amplifier module in an amplification stage of the SA. The disclosure may improve an accuracy of reading data of the SA.
    Type: Application
    Filed: September 13, 2021
    Publication date: January 27, 2022
    Inventors: Xiulong WU, Li ZHAO, Yangkuo ZHAO, Jun HE, Xin LI, Zhan YING, Kanyu CAO, Wenjuan LU, Chunyu PENG, Zhiting LIN, Junning CHEN