Patents by Inventor Yangli XIN

Yangli XIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Switch bootstrap charging circuit suitable for gate drive circuit of GaN power device
    Patent number: 10673426
    Abstract: A switch bootstrap charging circuit suitable for a gate drive circuit of a GaN power device includes a high-voltage MOSFET, a low-voltage MOSFET, a high-voltage MOSFET control module, and a low-voltage MOSFET control module. The low-voltage MOSFET is a PMOS transistor, and the source of the low-voltage MOSFET is connected to the power supply voltage. The drain of the high-voltage MOSFET serves as an output terminal of the switch bootstrap charging circuit. The low-voltage MOSFET control module and the high-voltage MOSFET control module generate a gate drive signal of the low-voltage MOSFET and a gate drive signal of the high-voltage MOSFET according to the gate drive signal of the lower power transistor.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: June 2, 2020
    Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Xin Ming, Li Hu, Xuan Zhang, Su Pan, Chunqi Zhang, Yao Qin, Zhiwen Zhang, Yangli Xin, Zhuo Wang, Bo Zhang
  • Switch Bootstrap Charging Circuit Suitable for Gate Drive Circuit of GaN Power Device
    Publication number: 20200052687
    Abstract: A switch bootstrap charging circuit suitable for a gate drive circuit of a GaN power device includes a high-voltage MOSFET, a low-voltage MOSFET, a high-voltage MOSFET control module, and a low-voltage MOSFET control module. The low-voltage MOSFET is a PMOS transistor, and the source of the low-voltage MOSFET is connected to the power supply voltage. The drain of the high-voltage MOSFET serves as an output terminal of the switch bootstrap charging circuit. The low-voltage MOSFET control module and the high-voltage MOSFET control module generate a gate drive signal of the low-voltage MOSFET and a gate drive signal of the high-voltage MOSFET according to the gate drive signal of the lower power transistor.
    Type: Application
    Filed: June 28, 2019
    Publication date: February 13, 2020
    Applicant: University of Electronic Science and Technology of China
    Inventors: Xin MING, Li HU, Xuan ZHANG, Su PAN, Chunqi ZHANG, Yao QIN, Zhiwen ZHANG, Yangli XIN, Zhuo WANG, Bo ZHANG