Abstract: The embodiment relates to a magnet unit of a semiconductor light emitting device for a display pixel and a self-assembly device using the same. A magnet unit according to an embodiment includes a magnet body and a magnet control unit disposed around an outer circumference of the magnet body. The magnet control unit includes a first magnet focusing unit spaced apart from an outer circumference of the magnet body and a first spacer disposed between the magnet body and the first magnet focusing unit.

Abstract: Discussed is a display device including a semiconductor light emitting device. The display device according to the embodiment can include a substrate, a first assembly electrode disposed on the substrate, a second assembly electrode disposed on the first assembly electrode, an insulating layer disposed between the first assembly electrode and the second assembly electrode, a metal layer disposed on the insulating layer and disposed to vertically overlap the first assembly electrode, and an assembly wall having an assembly hole and disposed on the metal layer and the second assembly electrode.

Abstract: The embodiment relates to a display device including a semiconductor light emitting device. A display device including the semiconductor light emitting device according to an embodiment can include a substrate, a first assembly electrode disposed on the substrate, a second assembly electrode branched and disposed above the first assembly electrode, an insulating layer disposed between the first assembly electrode and the second assembly electrode, an assembly barrier wall including a predetermined assembly hole and disposed on the second assembly electrode, and a semiconductor light emitting diode disposed in the assembly hole and electrically connected to the second assembly electrode.

Abstract: A display device according to an embodiment can include a first assembly electrode and a second assembly electrode disposed to be spaced apart from each other on a substrate, a first insulating layer disposed on the first assembly electrode and the second assembly electrode, a semiconductor light emitting device having an assembly barrier wall including a predetermined assembly hole and disposed on the first insulating layer, a side electrode electrically connected to a first side surface of the semiconductor light emitting device, and a second panel electrode electrically connected to the second conductivity type semiconductor layer.

Abstract: A display device can include a first assembly electrode disposed on a substrate, a second assembly electrode disposed above the first assembly electrode, and the first assembly electrode, an insulating layer disposed between the second assembly electrodes, an assembling partition including an assembly hole and disposed on the second assembly electrode, and a semiconductor light emitting device disposed in the assembly hole and electrically connected to the second assembly electrode.

Abstract: A light emitting apparatus includes a plurality of wiring electrodes, a plurality of semiconductor light emitting devices connected between two of the plurality of wiring electrodes, and a reflection layer of metal disposed under the plurality of semiconductor light emitting devices, wherein the plurality of wiring electrodes are connected in series with each other by the plurality of semiconductor light emitting devices, and at least one of the plurality of semiconductor light emitting devices is connected between two consecutive wiring electrodes among the plurality of wiring electrodes.

Abstract: Discussed is a display device and a method for manufacturing same, specifically, to a display device using semiconductor light-emitting elements of a few micrometers to tens of micrometers in size, and includes substrate having a wiring electrode, and a plurality of semiconductor light-emitting elements electrically connected to the wiring electrode, wherein each of the plurality of light-emitting elements includes of a buffer layer and an oxide layer formed on the buffer layer, and the oxide layer includes of an oxide of the buffer layer.

Abstract: The present invention relates to an anisotropic complex sintered magnet including MnBi with magnetic characteristics enhanced and an atmospheric sintering method for preparing the same. The anisotropic complex sintered magnet including MnBi according to the present invention may implement excellent magnetic characteristics, and thus may replace rare earth bond magnets in the related art, and a continuous process is enabled because the magnet is prepared by an atmospheric sintering method, and a sintering method used in the permanent magnet process in the related art is used as it is, so that the anisotropic complex sintered magnet is economical.

Abstract: Disclosed are an MnBi sintered magnet exhibiting excellent thermal stability as well as excellent magnetic characteristics at high temperature, an MnBi anisotropic complex sintered magnet, and a method of preparing the same.

Abstract: The present invention relates to a method of preparing an anisotropic complex sintered magnet having MnBi, that includes: (a) preparing a non-magnetic phase MnBi-based ribbon by a rapidly solidification process (RSP); (b) heat treating the non-magnetic phase MnBi-based ribbon to convert the non-magnetic phase MnBi-based ribbon into a magnetic phase MnBi-based ribbon; (c) grinding the magnetic phase MnBi-based ribbon to form a MnBi hard magnetic phase powder; (d) mixing the MnBi hard magnetic phase powder with a rare-earth hard magnetic phase powder; (e) magnetic field molding the mixture obtained in step (d) by applying an external magnetic field to form a molded article; and (f) sintering the molded article.

Abstract: Disclosed are an MnBi sintered magnet exhibiting excellent thermal stability as well as excellent magnetic characteristics at high temperature, an MnBi anisotropic complex sintered magnet, and a method of preparing the same.

Abstract: The present invention relates to an anisotropic complex sintered magnet including MnBi with magnetic characteristics enhanced and an atmospheric sintering method for preparing the same. The anisotropic complex sintered magnet including MnBi according to the present invention may implement excellent magnetic characteristics, and thus may replace rare earth bond magnets in the related art, and a continuous process is enabled because the magnet is prepared by an atmospheric sintering method, and a sintering method used in the permanent magnet process in the related art is used as it is, so that the anisotropic complex sintered magnet is economical.

Abstract: The present invention relates to a method of preparing an anisotropic complex sintered magnet having MnBi, that includes: (a) preparing a non-magnetic phase MnBi-based ribbon by a rapidly solidification process (RSP); (b) heat treating the non-magnetic phase MnBi-based ribbon to convert the non-magnetic phase MnBi-based ribbon into a magnetic phase MnBi-based ribbon; (c) grinding the magnetic phase MnBi-based ribbon to form a MnBi hard magnetic phase powder; (d) mixing the MnBi hard magnetic phase powder with a rare-earth hard magnetic phase powder; (e) magnetic field molding the mixture obtained in step (d) by applying an external magnetic field to form a molded article; and (f) sintering the molded article.

Abstract: The method of preparing an MnBi-based magnetic substance according to the present invention includes: (a) preparing a mixed melt by simultaneously melting a manganese-based material and a bismuth-based material; (b) forming a non-magnetic MnBi-based ribbon by cooling the mixed melt; and (c) converting the non-magnetic MnBi-based ribbon into a magnetic MnBi-based ribbon by performing a heat treatment. The method for preparing an MnBi-based sintered magnet includes: (a) preparing a magnetic powder by pulverizing the MnBi-based magnetic substance; (b) molding the magnetic powder in a state where a magnetic field is applied; and (c) sintering the molded magnetic powder.

Abstract: A bifacial solar cell is discussed. The bifacial solar cell includes a substrate, a p+-type doped region positioned at a first surface of the substrate, a P-type electrode part electrically connected to the p+-type doped region, an n+-type doped region positioned at a second surface of the substrate, and an N-type electrode part electrically connected to the n+-type doped region. The P-type electrode part is formed of a first inorganic solid powder including a first powder, which contains silver (Ag) and has an average diameter of about 0.2 ?m to 1 ?m, and a second powder, which contains a group III element and has an average diameter of about 1 ?m to 5 ?m. The N-type electrode part is formed of a second inorganic solid powder including only the first powder.

Abstract: A bifacial solar cell is discussed. The bifacial solar cell includes a substrate, a p+-type doped region positioned at a first surface of the substrate, a P-type electrode part electrically connected to the p+-type doped region, an n+-type doped region positioned at a second surface of the substrate, and an N-type electrode part electrically connected to the n+-type doped region. The P-type electrode part is formed of a first inorganic solid powder including a first powder, which contains silver (Ag) and has an average diameter of about 0.2 ?m to 1 ?m, and a second powder, which contains a group III element and has an average diameter of about 1 ?m to 5 ?m. The N-type electrode part is formed of a second inorganic solid powder including only the first powder.