Abstract: The present disclosure includes an all-nitride-based epitaxial and chip structure and a light-emitting device. The epitaxial and chip structure includes an N-type semiconductor layer, a P-type semiconductor layer, an electroluminescent (EL) multiple quantum wells (MQWs) region, and a first photoluminescent (PL) multiple quantum wells (MQWs) region stacked on a main surface of a substrate. The EL MQWs region generates a first-color light by an EL method and the first-color light is further transmitted to the first PL MQWs region or/and the second PL MQWs region where the second-color light or/and the third-color light are generated by a PL method. The present disclosure provides an EL MQWs region to generate the first-color light, and also provides a first, a second or more PL MQWs regions to further convert the first-color light into the second, the third or more-color lights which allow RGB or multiple colors emission.

Abstract: A Group-III nitrides epitaxial structure includes a Si substrate, and a Group-III nitrides layer disposed over the Si substrate, wherein an interface structure of “coexistence of Al atoms and SixNy” between the Si substrate and the Group-III nitrides. Al atoms are configured to be absorbed to the Si substrate and connect the Group-III nitrides; and SixNy are configured to release mismatch stress caused by heteroepitaxy. A fabricating method comprises: (1) providing a Si substrate; (2) forming an interface structure over a surface of the Si substrate , wherein the interface structure is arranged with both Al atoms and SixNy, which are then cladded by an AlN epitaxial layer; and (3) growing Group-III nitrides over the interface structure wherein the Al atoms are configured to be absorbed to the Si substrate and connect the Group-III nitrides and the SixNy is configured to release mismatch stress generated by heteroepitaxy.