Abstract: This present disclosure provides a core-shell quantum dot, a preparation method thereof, and a light-emitting device containing the same. The core of the core-shell quantum dot is CdSeXS(1-X), and the quantum dot shells include a first shell and a second shell, the first shell being selected from one or more of ZnSe, ZnSeYS(1-Y) and Cd(Z)Zn(1-Z)S, the second shell covering the first shell being one of Cd(Z)Zn(1-Z)S and ZnS, the maximum emission peak of the core-shell quantum dot is less than or equal to 480 nm, 0<X<1, 0<Y<1, 0<Z<1. The CdSeXS(1-X) core has a smaller bandgap and a shallower HOMO energy level, making hole injection easier.

Abstract: The present disclosure relates to a quantum dot and a preparation method for the same, and a photoelectric device. The quantum dot includes a core and a shell layer coating the core, a material of the core is CdZnSe, and a material of the shell layer is CdZnS, wherein, a molar ratio of Cd element with respect to S element in the shell layer is from 0.15:1 to 0.4:1.

Abstract: This present disclosure provides a core-shell quantum dot, a preparation method thereof, and a light-emitting device containing the same. The core of the core-shell quantum dot is CdSeXS(1-X), and the quantum dot shells include a first shell and a second shell, the first shell being selected from one or more of ZnSe, ZnSeYS(1-Y) and Cd(Z)Zn(1-Z)S, the second shell covering the first shell being one of Cd(Z)Zn(1-Z)S and ZnS, the maximum emission peak of the core-shell quantum dot is less than or equal to 480 nm, 0<X<1, 0<Y<1, 0<Z<1. The CdSeXS(1-X) core has a smaller bandgap and a shallower HOMO energy level, making hole injection easier.