Abstract: The present disclosure discloses a method for adjusting antenna state of a wireless AP, an smart antenna scheduling method and a wireless AP, wherein the method includes: acquiring a performance index of an antenna of a wireless AP in a current antenna state, wherein the performance index is a weighted average of negotiated rates of a plurality of clients communicably connected with the wireless AP; and adjusting the antenna state of the antenna based on the performance index of the antenna of the wireless AP in the current antenna state.

Abstract: A formation method of a filter device includes: forming a first layer by providing a first substrate and forming a resonance device preprocessing layer with a first side and a second side opposite to the first side, wherein the first substrate is located on the first side; forming a second layer by providing a second substrate and forming a first passive device with a third side and a fourth side opposite to the third side, wherein the second substrate is located on the third side; connecting the first layer located on the fourth side and the second layer located on the second side; removing the first substrate; and forming at least one first resonance device based on the resonance device preprocessing layer. The resonance device and the passive device are integrated in one die to form a filter device, which requires less space in an RF front-end chip.

Abstract: An interface display method and a terminal are provided. The interface display method is applied to the terminal and includes: receiving a first input performed by a user on a target control in a case of displaying a user interface of a first application in a first region of a screen of the terminal, and the target control being used to indicate the first application and/or a second application; and responding to the first input and displaying a user interface of the second application in the first region.

Abstract: A BAW resonance device, a filter device and an RF front-end device are provided. The BAW resonance device comprises a first passive part including a first substrate and a first heat-dissipation layer located over the first substrate; a first active part including a first piezoelectric layer, a first electrode layer and a second electrode layer, wherein the first piezoelectric layer is located over the first passive part and has a first side and a second side opposite to the first side, the first passive part is located on the first side, the first electrode layer is also located on the first side and is disposed between the first passive part and the first piezoelectric layer, and the second electrode layer is located on the second side; and a first cavity located on the first side and disposed between the first passive part and the first piezoelectric layer, wherein at least one part of the first electrode layer is located on or in the first cavity.

Abstract: The invention provides a filter device, an RF front-end device and a wireless communication device. The filter device comprises a substrate, at least one resonance device, a passive device and a connector, wherein the at least one resonance device has a first side and a second side opposite to the first side, the substrate is located on the first side, and the passive device is located on the second side. The at least one resonance device is connected to the passive device through the connector. The RF filter device formed by integrating the resonance device (such as an SAW resonance device or a BAW resonance device) and the passive device (such as an IPD) in one die can broaden the passband width, has a high out-of-band rejection, and occupies less space in an RF front-end chip.

Abstract: A filter device, an RF front-end device and a wireless communication device are provided. The filter device includes a substrate, a passive device and at least one resonance device, wherein the passive device has a first side and a second side opposite to the first side, the substrate is located on the first side, and the at least one resonance device is located on the second side. The RF filter device formed by integrating the resonance device (such as an SAW or BAW resonance device) and the passive device (such as an IPD) can broaden the pass-band width, has a high out-of-band rejection, and occupies less space in an RF front-end chip.

Abstract: A BAW resonance device comprises a first layer including a cavity located on a first side, a first electrode having a first end located in the cavity and a second end contacting with the first layer, a second layer located on the first side, and a second electrode located on the second layer above the cavity, wherein the first electrode and the second electrode are located on two sides of the second layer. The first electrode comprises a first electrode layer and a second electrode layer, and the second electrode layer and the second layer are located on two sides of the first electrode layer. The second electrode comprises a third electrode layer and a fourth electrode layer, and the second layer and the fourth electrode layer are located on two sides of the third electrode layer. Thus, the electrical resistance is lowered and the electrical losses are reduced.

Abstract: An interface display method and a terminal are provided. The interface display method is applied to the terminal and includes: receiving a first input performed by a user on a target control in a case of displaying a user interface of a first application in a first region of a screen of the terminal, and the target control being used to indicate the first application and/or a second application; and responding to the first input and displaying a user interface of the second application in the first region.

Abstract: The invention provides a filter device, an RF front-end device and a wireless communication device. The filter device comprises a substrate, at least one resonance device, a passive device and a connector, wherein the at least one resonance device has a first side and a second side opposite to the first side, the substrate is located on the first side, and the passive device is located on the second side. The at least one resonance device is connected to the passive device through the connector. The RF filter device formed by integrating the resonance device (such as an SAW resonance device or a BAW resonance device) and the passive device (such as an IPD) in one die can broaden the passband width, has a high out-of-band rejection, and occupies less space in an RF front-end chip.

Abstract: A BAW resonance device comprises a first layer including a cavity located on a first side, a first electrode having a first end located in the cavity and a second end contacting with the first layer, a second layer located on the first side, and a second electrode located on the second layer above the cavity, wherein the first electrode and the second electrode are located on two sides of the second layer. The first electrode comprises a first electrode layer and a second electrode layer, and the second electrode layer and the second layer are located on two sides of the first electrode layer. The second electrode comprises a third electrode layer and a fourth electrode layer, and the second layer and the fourth electrode layer are located on two sides of the third electrode layer. Thus, the electrical resistance is lowered and the electrical losses are reduced.

Abstract: A formation method of a filter device includes: forming a first layer by providing a first substrate and forming a resonance device preprocessing layer with a first side and a second side opposite to the first side, wherein the first substrate is located on the first side; forming a second layer by providing a second substrate and forming a first passive device with a third side and a fourth side opposite to the third side, wherein the second substrate is located on the third side; connecting the first layer located on the fourth side and the second layer located on the second side; removing the first substrate; and forming at least one first resonance device based on the resonance device preprocessing layer. The resonance device and the passive device are integrated in one die to form a filter device, which requires less space in an RF front-end chip.

Abstract: A filter device, an RF front-end device and a wireless communication device are provided. The filter device includes a substrate, a passive device and at least one resonance device, wherein the passive device has a first side and a second side opposite to the first side, the substrate is located on the first side, and the at least one resonance device is located on the second side. The RF filter device formed by integrating the resonance device (such as an SAW or BAW resonance device) and the passive device (such as an IPD) can broaden the pass-band width, has a high out-of-band rejection, and occupies less space in an RF front-end chip.

Abstract: A scanning table is provided to measure a patient's weight accurately. The scanning table may include a table body, for supporting a human body; a lifting system, for driving the table body to go up and down; and a force-measuring component connected with the lifting system, for measuring a support force which is imposed on the table body by the lifting system. Because the support force to the table body by the lifting system is related to positions of a patient and the table body. When the lifting system is connected with the force-measuring component, a force measured by the force-measuring component can reflect the patient's weight accurately and truly. The force-measuring component can measure a change of the support force, which is combined with related data of the table body to obtain the patient's weight. Therefore, the measurement accuracy can be improved.