Abstract: A continuous refrigeration system for kidney transplantation surgery includes: a kidney bag, an extracorporeal ring and an intracorporal ring. One end of the kidney bag is provided with a bag mouth that allows the kidney and crushed ice to enter the interior of the kidney bag; the extracorporeal ring and the intracorporal ring are spaced on the kidney bag, and a lead-out end is provided both outside and inside the bottom of the kidney bag. A partial length of the kidney bag is supported to form the through circulation passage through which the kidney enters the kidney bag and thus obtaining a carrier for entering the human body, making the operation simple, convenient and fast. The lead-out end is provided so that the kidney bag is adapted to laparoscopic surgery.

Abstract: A multifunctional fiber with full-spectrum infrared radiation, flame retardant and antibacterial functions, including a composite masterbatch having a water content of 30-50 ppm and accounting for 10-12% by weight, polyethylene terephthalate having a water content of 25-30 ppm or polycaprolactam high polymer having a water content of 50-70 ppm and accounting for 88-90% by weight; the fiber and its fabric possess multiple functions such as spectral heating, flame retardancy, anti-bacteria and anti-virus; after being illuminated for 5-10 minutes, the temperature difference of the fiber fabric of the present invention is higher than 15-20° C., the far-infrared emissivity is greater than 98%, the radiation temperature rise is greater than 3.0° C., the CLO value is greater than 0.5, the heat transfer coefficient is greater than 18.0w/(m2k), and the thermal resistance is less than 0.05 (m2k)/w.

Abstract: A method for manufacturing semiconductor devices is provided. The method includes: providing a substrate structure comprising a semiconductor substrate and a trench insulator portion in the semiconductor substrate; forming a dummy gate on the semiconductor substrate; performing a first ion implantation into the semiconductor substrate to form a first doped region between the trench insulator portion and the dummy gate; and forming a first connecting member connecting the dummy gate with the first doped region.

Abstract: The present invention discloses a method for preparing a PET/PTT parallel complex filament with high self-crimpiness, wherein PET and PTT are sliced, dried and crystallized, and then fused separately and subjected to extrusion molding through a parallel-type spinneret plate; oil is applied after cooling; then level 1-3 drafting and heat setting treatment are adopted; and during drafting, a total drafting rate is controlled to be 3 to 3.5, wherein the level-1 drafting rate is 2.8 to 3.0 at a temperature controlled to be 75 to 80° C., according to the method for preparing the PET/PTT parallel complex filament with high self-crimpiness, methods like multi-level drafting for increasing the drafting rate are adopted, and the effects of improving the fiber strength, moderately lowering the breaking elongation, and greatly improving the self-crimpiness are achieved.

Abstract: A method for manufacturing semiconductor devices is provided. The method includes: providing a substrate structure comprising a semiconductor substrate and a trench insulator portion in the semiconductor substrate; forming a dummy gate on the semiconductor substrate; performing a first ion implantation into the semiconductor substrate to form a first doped region between the trench insulator portion and the dummy gate; and forming a first connecting member connecting the dummy gate with the first doped region.

Abstract: A semiconductor device includes a semiconductor substrate, a trench isolator portion in the semiconductor substrate, a dummy gate on the semiconductor substrate, a first doped region between the trench isolator portion and the dummy gate in the semiconductor substrate, and a first connecting member electrically connected the dummy gate with the first doped region. With the dummy gate electrically connected to the first doped region, a transistor including the dummy gate is turned off, thereby preventing the occurrence of current leakage and improving the reliability of a memory device having the semiconductor device.

Abstract: A semiconductor device includes a semiconductor substrate, a trench isolator portion in the semiconductor substrate, a dummy gate on the semiconductor substrate, a first doped region between the trench isolator portion and the dummy gate in the semiconductor substrate, and a first connecting member electrically connected the dummy gate with the first doped region. With the dummy gate electrically connected to the first doped region, a transistor including the dummy gate is turned off, thereby preventing the occurrence of current leakage and improving the reliability of a memory device having the semiconductor device.

Abstract: Technologies relating to wavelength division multiplexing are provided. In one implementation, a wavelength division multiplexing (WDM) coupler is provided. The WDM coupler includes an input block including a first tube, the first tube holding an input dual fiber pigtailed capillary, the capillary holding an input fiber and a reflection fiber, a center block including a center tube holding a first inner tube and a second inner tube, the first inner tube holding a first lens within the first inner tube and the second inner tube holding a second lens within the second inner tube, the center block further including a WDM filter positioned between the first lens and the second lens and secured to the end surface of the first inner tube, and an output block including a second tube holding an output single fiber pigtailed capillary, the capillary holding a transmission fiber.

Abstract: Multi-lingual text is rendered by creating bit map files and by determining font bindings. In particular, a font property file is specified. Font bit map files are created based upon the font property file. An input file with multi-lingual text is received. The font bit map files are accessed to determine font bindings for characters within the input file. Related methods, apparatus, systems, and articles are also described.

Abstract: A computer readable storage medium includes executable instructions, which when executed by a computer, cause the computer to specify a font property file. Font bit map files are created based upon the font property file. An input file with multi-lingual text is received. The font bit map files are accessed to determine font bindings for characters within the input file.

Abstract: Technologies relating to wavelength division multiplexing are provided. In one implementation, a wavelength division multiplexing (WDM) coupler is provided. The WDM coupler includes an input block including a first tube, the first tube holding an input dual fiber pigtailed capillary, the capillary holding an input fiber and a reflection fiber, a center block including a center tube holding a first inner tube and a second inner tube, the first inner tube holding a first lens within the first inner tube and the second inner tube holding a second lens within the second inner tube, the center block further including a WDM filter positioned between the first lens and the second lens and secured to the end surface of the first inner tube, and an output block including a second tube holding an output single fiber pigtailed capillary, the capillary holding a transmission fiber.