Patents by Inventor Yann Alain Marcel MIGNOT

Yann Alain Marcel MIGNOT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SELECTIVE GAS ETCHING FOR SELF-ALIGNED PATTERN TRANSFER
    Publication number: 20220262636
    Abstract: Selective gas etching for self-aligned pattern transfer uses a first block and a separate second block formed in a sacrificial layer to transfer critical dimensions to a desired final layer using a selective gas etching process. The first block is a first hardmask material that can be plasma etched using a first gas, and the second block is a second hardmask material that can be plasma etched using a second gas separate from the first gas. The first hardmask material is not plasma etched using the second gas, and the second hardmask material is not plasma etched using the first gas.
    Type: Application
    Filed: March 7, 2022
    Publication date: August 18, 2022
    Inventors: John Christopher Arnold, Sean D. Burns, Yann Alain Marcel Mignot, Yongan Xu
  • Selective gas etching for self-aligned pattern transfer
    Patent number: 11302533
    Abstract: Selective gas etching for self-aligned pattern transfer uses a first block and a separate second block formed in a sacrificial layer to transfer critical dimensions to a desired final layer using a selective gas etching process. The first block is a first hardmask material that can be plasma etched using a first gas, and the second block is a second hardmask material that can be plasma etched using a second gas separate from the first gas. The first hardmask material is not plasma etched using the second gas, and the second hardmask material is not plasma etched using the first gas.
    Type: Grant
    Filed: February 22, 2021
    Date of Patent: April 12, 2022
    Assignee: Tessera, Inc.
    Inventors: John Christopher Arnold, Sean D. Burns, Yann Alain Marcel Mignot, Yongan Xu
  • SELECTIVE GAS ETCHING FOR SELF-ALIGNED PATTERN TRANSFER
    Publication number: 20210183653
    Abstract: Selective gas etching for self-aligned pattern transfer uses a first block and a separate second block formed in a sacrificial layer to transfer critical dimensions to a desired final layer using a selective gas etching process. The first block is a first hardmask material that can be plasma etched using a first gas, and the second block is a second hardmask material that can be plasma etched using a second gas separate from the first gas. The first hardmask material is not plasma etched using the second gas, and the second hardmask material is not plasma etched using the first gas.
    Type: Application
    Filed: February 22, 2021
    Publication date: June 17, 2021
    Inventors: John Christopher Arnold, Sean D. Burns, Yann Alain Marcel Mignot, Yongan Xu
  • Selective gas etching for self-aligned pattern transfer
    Patent number: 10930504
    Abstract: Selective gas etching for self-aligned pattern transfer uses a first block and a separate second block formed in a sacrificial layer to transfer critical dimensions to a desired final layer using a selective gas etching process. The first block is a first hardmask material that can be plasma etched using a first gas, and the second block is a second hardmask material that can be plasma etched using a second gas separate from the first gas. The first hardmask material is not plasma etched using the second gas, and the second hardmask material is not plasma etched using the first gas.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: February 23, 2021
    Assignee: Tessera, Inc.
    Inventors: John Christopher Arnold, Sean D. Burns, Yann Alain Marcel Mignot, Yongan Xu
  • SELECTIVE GAS ETCHING FOR SELF-ALIGNED PATTERN TRANSFER
    Publication number: 20200083045
    Abstract: Selective gas etching for self-aligned pattern transfer uses a first block and a separate second block formed in a sacrificial layer to transfer critical dimensions to a desired final layer using a selective gas etching process. The first block is a first hardmask material that can be plasma etched using a first gas, and the second block is a second hardmask material that can be plasma etched using a second gas separate from the first gas. The first hardmask material is not plasma etched using the second gas, and the second hardmask material is not plasma etched using the first gas.
    Type: Application
    Filed: November 13, 2019
    Publication date: March 12, 2020
    Inventors: John Christopher ARNOLD, Sean D. BURNS, Yann Alain Marcel MIGNOT, Yongan XU
  • Selective gas etching for self-aligned pattern transfer
    Patent number: 10559467
    Abstract: Selective gas etching for self-aligned pattern transfer uses a first block and a separate second block formed in a sacrificial layer to transfer critical dimensions to a desired final layer using a selective gas etching process. The first block is a first hardmask material that can be plasma etched using a first gas, and the second block is a second hardmask material that can be plasma etched using a second gas separate from the first gas. The first hardmask material is not plasma etched using the second gas, and the second hardmask material is not plasma etched using the first gas.
    Type: Grant
    Filed: June 6, 2018
    Date of Patent: February 11, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES COPORATION
    Inventors: John Christopher Arnold, Sean D. Burns, Yann Alain Marcel Mignot, Yongan Xu
  • SELECTIVE GAS ETCHING FOR SELF-ALIGNED PATTERN TRANSFER
    Publication number: 20180286682
    Abstract: Selective gas etching for self-aligned pattern transfer uses a first block and a separate second block formed in a sacrificial layer to transfer critical dimensions to a desired final layer using a selective gas etching process. The first block is a first hardmask material that can be plasma etched using a first gas, and the second block is a second hardmask material that can be plasma etched using a second gas separate from the first gas. The first hardmask material is not plasma etched using the second gas, and the second hardmask material is not plasma etched using the first gas.
    Type: Application
    Filed: June 6, 2018
    Publication date: October 4, 2018
    Inventors: John Christopher ARNOLD, Sean D. BURNS, Yann Alain Marcel MIGNOT, Yongan XU
  • Selective gas etching for self-aligned pattern transfer
    Patent number: 10032632
    Abstract: Selective gas etching for self-aligned pattern transfer uses a first block and a separate second block formed in a sacrificial layer to transfer critical dimensions to a desired final layer using a selective gas etching process. The first block is a first hardmask material that can be plasma etched using a first gas, and the second block is a second hardmask material that can be plasma etched using a second gas separate from the first gas. The first hardmask material is not plasma etched using the second gas, and the second hardmask material is not plasma etched using the first gas.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: July 24, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: John Christopher Arnold, Sean D. Burns, Yann Alain Marcel Mignot, Yongan Xu
  • SELECTIVE GAS ETCHING FOR SELF-ALIGNED PATTERN TRANSFER
    Publication number: 20180096846
    Abstract: Selective gas etching for self-aligned pattern transfer uses a first block and a separate second block formed in a sacrificial layer to transfer critical dimensions to a desired final layer using a selective gas etching process. The first block is a first hardmask material that can be plasma etched using a first gas, and the second block is a second hardmask material that can be plasma etched using a second gas separate from the first gas. The first hardmask material is not plasma etched using the second gas, and the second hardmask material is not plasma etched using the first gas.
    Type: Application
    Filed: October 4, 2016
    Publication date: April 5, 2018
    Inventors: John Christopher ARNOLD, Sean D. BURNS, Yann Alain Marcel MIGNOT, Yongan XU