Patents by Inventor Yann Almadori

Yann Almadori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10109484
    Abstract: Method for producing nanocrystals of semiconductor, comprising at least: ion bombardment of a thin layer of semiconductor arranged on at least one dielectric layer, achieving at least one among an implantation of ions of at least one chemical element of rare gas type and an implantation of ions of at least one semiconductor element of same nature as that of the thin layer, in at least one part of the thickness of the thin layer; annealing of the thin layer achieving a dewetting of the semiconductor of the thin layer and forming, on the dielectric layer, nanocrystals of semiconductor.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: October 23, 2018
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Yann Almadori, Jean-Charles Barbe, Lukasz Borowik
  • Publication number: 20170186612
    Abstract: Method for producing nanocrystals of semiconductor, comprising at least: ion bombardment of a thin layer of semiconductor arranged on at least one dielectric layer, achieving at least one among an implantation of ions of at least one chemical element of rare gas type and an implantation of ions of at least one semiconductor element of same nature as that of the thin layer, in at least one part of the thickness of the thin layer; annealing of the thin layer achieving a dewetting of the semiconductor of the thin layer and forming, on the dielectric layer, nanocrystals of semiconductor.
    Type: Application
    Filed: December 27, 2016
    Publication date: June 29, 2017
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Yann Almadori, Jean-Charles Barbe, Lukasz Borowik