Patents by Inventor Yann Conraux

Yann Conraux has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210110023
    Abstract: A MLU-based magnetic device including a plurality of MLU-based magnetic cells, each MLU cell including a first ferromagnetic layer having a first magnetization, a second ferromagnetic layer having a second magnetization, and a spacing layer between the first and second ferromagnetic layers. An input device is configured for generating an input signal adapted for changing the orientation of the first magnetization relative to the second magnetization and vary a resistance of the MLU device. A bit line is configured for passing a sense signal adapted for measuring the resistance. A processing unit is configured for computing an electrical variation from the sense signal and outputting an electrical variation signature. The present disclosure further pertains to an authentication method for reading the MLU device.
    Type: Application
    Filed: March 18, 2019
    Publication date: April 15, 2021
    Inventors: Quentin Stainer, Myckael Mouchel, Yann Conraux
  • Patent number: 10326421
    Abstract: A magnetoresistive-based signal shaping circuit for audio applications includes: a field emitting device configured for receiving an input current signal from an audio signal source and for generating a magnetic field in accordance with the input current signal, and a first magnetoresistive element having a first electrical resistance and electrically connected in series to a second magnetoresistive element having a second electrical resistance. The magnetoresistive-based signal shaping device provides an output signal across the second magnetoresistive element when an input voltage is applied across the first and second magnetoresistive element in series. The output signal is a function of the electrical resistance and yields a dynamic range compression effect. The first and second electrical resistance vary with the magnetic field in an opposite fashion.
    Type: Grant
    Filed: March 15, 2017
    Date of Patent: June 18, 2019
    Assignee: CROCUS TECHNOLOGY SA
    Inventors: Yann Conraux, Quentin Stainer
  • Publication number: 20190081602
    Abstract: A magnetoresistive-based signal shaping circuit for audio applications includes: a field emitting device configured for receiving an input current signal from an audio signal source and for generating a magnetic field in accordance with the input current signal, and a first magnetoresistive element having a first electrical resistance and electrically connected in series to a second magnetoresistive element having a second electrical resistance. The magnetoresistive-based signal shaping device provides an output signal across the second magnetoresistive element when an input voltage is applied across the first and second magnetoresistive element in series. The output signal is a function of the electrical resistance and yields a dynamic range compression effect. The first and second electrical resistance vary with the magnetic field in an opposite fashion.
    Type: Application
    Filed: March 15, 2017
    Publication date: March 14, 2019
    Inventors: Yann Conraux, Quentin Stainer
  • Patent number: 9978434
    Abstract: Method for programming a magnetic device including a plurality of magnetic logical unit MLU cells using a single programming current, each MLU cell includes a storage magnetic layer having a storage magnetization that is pinned at a low threshold temperature and freely orientable at a high threshold temperature. A programming line is physically separated from each of the plurality of MLU cells and configured for passing a programming current pulse for programming any one of the plurality of MLU cells. The method includes: passing the programming current in the field line for heating the magnetic tunnel junction of each of the plurality of MLU cells at the high threshold temperature such as to unpin the second magnetization; wherein the programming current is further adapted for generating a programming magnetic field adapted for switching the storage magnetization of each of the plurality of MLU cells in a programmed direction.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: May 22, 2018
    Assignee: CROCUS TECHNOLOGY SA
    Inventor: Yann Conraux
  • Publication number: 20170249982
    Abstract: Method for programming a magnetic device including a plurality of magnetic logical unit MLU cells using a single programming current, each MLU cell includes a storage magnetic layer having a storage magnetization that is pinned at a low threshold temperature and freely orientable at a high threshold temperature. A programming line is physically separated from each of the plurality of MLU cells and configured for passing a programming current pulse for programming any one of the plurality of MLU cells. The method includes: passing the programming current in the field line for heating the magnetic tunnel junction of each of the plurality of MLU cells at the high threshold temperature such as to unpin the second magnetization; wherein the programming current is further adapted for generating a programming magnetic field adapted for switching the storage magnetization of each of the plurality of MLU cells in a programmed direction.
    Type: Application
    Filed: October 2, 2015
    Publication date: August 31, 2017
    Inventor: Yann Conraux
  • Patent number: 9461093
    Abstract: Self-reference-based MRAM element including: first and second magnetic tunnel junctions, each having a magnetoresistance that can be varied; and a field line for passing a field current to vary the magnetoresistance of the first and second magnetic tunnel junctions. The field line includes a first branch and a second branch each branch including cladding. The first branch is arranged for passing a first portion of the field current to selectively vary the magnetoresistance of the first magnetic tunnel junction, and the second branch is electrically connected in parallel with the first branch and arranged for passing a second portion of the field current to selectively vary the magnetoresistance of the second magnetic tunnel junction. The self-referenced MRAM element and an MRAM device including corresponding MRAM elements can use a reduced field current.
    Type: Grant
    Filed: October 11, 2013
    Date of Patent: October 4, 2016
    Assignee: CROCUS TECHNOLOGY SA
    Inventor: Yann Conraux
  • Publication number: 20150287764
    Abstract: Self-reference-based MRAM element including: first and second magnetic tunnel junctions, each having a magnetoresistance that can be varied; and a field line for passing a field current to vary the magnetoresistance of the first and second magnetic tunnel junctions. The field line includes a first branch and a second branch each branch including cladding. The first branch is arranged for passing a first portion of the field current to selectively vary the magnetoresistance of the first magnetic tunnel junction, and the second branch is electrically connected in parallel with the first branch and arranged for passing a second portion of the field current to selectively vary the magnetoresistance of the second magnetic tunnel junction. The self-referenced MRAM element and an MRAM device including corresponding MRAM elements can use a reduced field current.
    Type: Application
    Filed: October 11, 2013
    Publication date: October 8, 2015
    Applicant: CROCUS Technology SA
    Inventor: Yann Conraux
  • Patent number: 8885379
    Abstract: The present disclosure concerns a self-referenced magnetic random access memory-based ternary content addressable memory (MRAM-based TCAM) cell comprising a first and second magnetic tunnel junction; a first and second conducting strap adapted to pass a heating current in the first and second magnetic tunnel junction, respectively; a conductive line electrically connecting the first and second magnetic tunnel junctions in series; a first current line for passing a first field current to selectively write a first write data to the first magnetic tunnel junction; and a second current line for passing a write current to selectively write a second write data to the second magnetic tunnel junction, such that three distinct cell logic states can be written in the MRAM-based TCAM cell.
    Type: Grant
    Filed: February 11, 2013
    Date of Patent: November 11, 2014
    Assignee: CROCUS Technology SA
    Inventors: Jeremy Alvarez-Herault, Yann Conraux, Lucien Lombard
  • Patent number: 7332781
    Abstract: The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction (60), comprising: a magnetic layer, called trapped layer (61), whereof the magnetization is rigid; a magnetic layer, called free layer (63), whereof the magnetization may be inverse; and insulating layer (62), interposed between the free layer (73) and the trapped layer (71) and respectively in contact with said two layers. The free layer (63) is made with an amorphous or nanocrytallized alloy based on rare earth or a transition metal, the magnetic order of said alloy being of the ferromagnetic type, said free layer having a substantially planar magnetization.
    Type: Grant
    Filed: September 19, 2002
    Date of Patent: February 19, 2008
    Assignee: Centre National de la Recherche Scientifique
    Inventors: Jean-Pierre Nozieres, Laurent Ranno, Yann Conraux
  • Patent number: 7129555
    Abstract: The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction (70) consisting of: a magnetic layer, known as the trapped layer (71), having hard magnetisation; a magnetic layer, known as the free layer (73), the magnetisation of which may be reversed; and an insulating layer (72) which is disposed between the free layer (73) and the trapped layer (71) and which is in contact with both of said layers. The free layer (73) is made from an amorphous or nanocrystalline alloy based on rare earth and a transition metal, the magnetic order of said alloy being of the ferrimagnetic type. The selected operating temperature of the inventive memory is close to the compensation temperature of the alloy.
    Type: Grant
    Filed: September 19, 2002
    Date of Patent: October 31, 2006
    Inventors: Jean-Pierre Nozieres, Laurent Ranno, Yann Conraux
  • Publication number: 20050047206
    Abstract: The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction (70) consisting of: a magnetic layer, known as the trapped layer (71), having hard magnetisation; a magnetic layer, known as the free layer (73), the magnetisation of which may be reversed; and an insulating layer (72) which is disposed between the free layer (73) and the trapped layer (71) and which is in contact with both of said layers. The free layer (73) is made from an amorphous or nanocrystalline alloy based on rare earth and a transition metal, the magnetic order of said alloy being of the ferrimagnetic type. The selected operating temperature of the inventive memory is close to the compensation temperature of the alloy.
    Type: Application
    Filed: September 19, 2002
    Publication date: March 3, 2005
    Inventors: Jean-Pierre Nozieres, Laurent Ranno, Yann Conraux
  • Publication number: 20050040433
    Abstract: The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction (60), comprising: a magnetic layer, called trapped layer (61), whereof the magnetization is rigid; a magnetic layer, called free layer (63), whereof the magnetization may be inverse; and insulating layer (62), interposed between the free layer (73) and the trapped layer (71) and respectively in contact with said two layers. The free layer (63) is made with an amorphous or nanocrytallized alloy based on rare earth or a transition metal, the magnetic order of said alloy being of the ferromagnetic type, said free layer having a substantially planar magnetization.
    Type: Application
    Filed: September 19, 2002
    Publication date: February 24, 2005
    Inventors: Jean-Pierre Nozieres, Laurent Ranno, Yann Conraux