Abstract: An electrically programmable read only memory including an inhibiting circuit for preventing operation of the memory if a reading voltage higher than a predetermined level above a standard reading voltage is applied as a reading voltage during a read operation. The inhibiting circuit includes a detection circuit for providing a detection signal in the event that a reading voltage higher than the standard reading voltage is applied to the memory, and a logic circuit connected to an output of the detection circuit and having an output supplied as an inhibiting signal, for example, to inhibit a clock signal within the integrated circuit, upon reception of the detection signal. In a preferred embodiment, the detection circuit includes an enhanced-type transistor connected in series with a depleted transistor serving as a load. The enhanced transistor has a channel ranging between 50 and 100 microns and a channel length ranging from 4 to 6 microns.