Abstract: A method for forming a superjunction transistor device includes: forming a plurality of semiconductor layers one on top of the other; implanting dopant atoms of a first doping type into each semiconductor layer to form first implanted regions in each semiconductor layer; implanting dopant atoms of a second doping type into each semiconductor layer to form second implanted regions in each semiconductor layer. Each of implanting the dopant atoms of the first and second doping types into each semiconductor layer includes forming a respective implantation mask on a respective surface of each semiconductor layer, and at least one of forming the first implanted regions and the second implanted regions in at least one of the semiconductor layers includes a tilted implantation process which uses an implantation vector that is tilted by a tilt angle relative to a normal of the respective horizontal surface of the respective semiconductor layer.

Abstract: A method for forming a superjunction transistor device includes: forming a plurality of semiconductor layers one on top of the other; implanting dopant atoms of a first doping type into each semiconductor layer to form first implanted regions in each semiconductor layer; implanting dopant atoms of a second doping type into each semiconductor layer to form second implanted regions in each semiconductor layer. Each of implanting the dopant atoms of the first and second doping types into each semiconductor layer includes forming a respective implantation mask on a respective surface of each semiconductor layer, and at least one of forming the first implanted regions and the second implanted regions in at least one of the semiconductor layers includes a tilted implantation process which uses an implantation vector that is tilted by a tilt angle relative to a normal of the respective horizontal surface of the respective semiconductor layer.

Abstract: A method for forming a superjunction transistor device includes: forming a plurality of semiconductor layers one on top of the other; implanting dopant atoms of a first doping type into each semiconductor layer to form first implanted regions in each semiconductor layer; implanting dopant atoms of a second doping type into each semiconductor layer to form second implanted regions in each semiconductor layer. Each of implanting the dopant atoms of the first and second doping types into each semiconductor layer includes forming a respective implantation mask on a respective surface of each semiconductor layer, and at least one of forming the first implanted regions and the second implanted regions in at least one of the semiconductor layers includes a tilted implantation process which uses an implantation vector that is tilted by a tilt angle relative to a normal of the respective horizontal surface of the respective semiconductor layer.

Abstract: A method for forming a superjunction transistor device includes: forming a plurality of semiconductor layers one on top of the other; implanting dopant atoms of a first doping type into each semiconductor layer to form first implanted regions in each semiconductor layer; implanting dopant atoms of a second doping type into each semiconductor layer to form second implanted regions in each semiconductor layer. Each of implanting the dopant atoms of the first and second doping types into each semiconductor layer includes forming a respective implantation mask on a respective surface of each semiconductor layer, and at least one of forming the first implanted regions and the second implanted regions in at least one of the semiconductor layers includes a tilted implantation process which uses an implantation vector that is tilted by a tilt angle relative to a normal of the respective horizontal surface of the respective semiconductor layer.

Abstract: A semiconductor device includes a transistor arrangement and a diode structure. The diode structure is coupled between a gate electrode structure of the transistor arrangement and a source electrode structure of the transistor arrangement. An insulating layer is located vertically between the diode structure and a front side surface of a semiconductor substrate of the semiconductor device. The diode structure includes at least one diode pn-junction. A substrate pn-junction extends from the front side surface of the semiconductor substrate into the semiconductor substrate between a shielding doping region and an edge doping portion. The edge doping portion is located adjacent to the shielding doping region within the semiconductor substrate. At the front side surface of the semiconductor substrate, the substrate pn-junction is located laterally between the diode pn-junction and a source contact region of the diode structure with the source electrode structure.

Abstract: A semiconductor device includes a transistor arrangement and a diode structure. The diode structure is coupled between a gate electrode structure of the transistor arrangement and a source electrode structure of the transistor arrangement. An insulating layer is located vertically between the diode structure and a front side surface of a semiconductor substrate of the semiconductor device. The diode structure includes at least one diode pn-junction. A substrate pn-j unction extends from the front side surface of the semiconductor substrate into the semiconductor substrate between a shielding doping region and an edge doping portion. The edge doping portion is located adjacent to the shielding doping region within the semiconductor substrate. At the front side surface of the semiconductor substrate, the substrate pn-junction is located laterally between the diode pn-junction and a source contact region of the diode structure with the source electrode structure.