Patents by Inventor Yannan Liang

Yannan Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • POLISHING COMPOSITIONS AND METHODS OF USE THEREOF
    Publication number: 20210253904
    Abstract: A polishing composition, includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a ruthenium removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.
    Type: Application
    Filed: February 8, 2021
    Publication date: August 19, 2021
    Inventors: Ting-Kai Huang, Tawei Lin, Bin Hu, Liqing Wen, Yannan Liang
  • POLISHING COMPOSITIONS AND METHODS OF USE THEREOF
    Publication number: 20210253903
    Abstract: A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.
    Type: Application
    Filed: February 8, 2021
    Publication date: August 19, 2021
    Inventors: Ting-Kai Huang, Tawei Lin, Bin Hu, Liqing Wen, Yannan Liang
  • Barrier ruthenium chemical mechanical polishing slurry
    Patent number: 11034859
    Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.
    Type: Grant
    Filed: March 11, 2019
    Date of Patent: June 15, 2021
    Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
    Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
  • POLISHING COMPOSITIONS AND METHODS OF USE THEREOF
    Publication number: 20210108106
    Abstract: A polishing composition includes an abrasive; an optional pH adjuster; a barrier film removal rate enhancer; a TEOS removal rate inhibitor; a cobalt removal rate enhancer; an azole-containing corrosion inhibitor; and a cobalt corrosion inhibitor.
    Type: Application
    Filed: October 6, 2020
    Publication date: April 15, 2021
    Inventors: Yannan Liang, Bin Hu, Liqing Wen, Shu-Wei Chang
  • POLISHING COMPOSITIONS AND METHODS OF USE THEREOF
    Publication number: 20210087431
    Abstract: A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a first low-k removal rate inhibitor; a second low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a cobalt corrosion inhibitor. This disclosure also relates to a method of polishing a substrate that comprises cobalt using the polishing compositions described herein.
    Type: Application
    Filed: September 18, 2020
    Publication date: March 25, 2021
    Inventors: Yannan Liang, Liqing Wen, Bin Hu, Tawei Lin
  • Chemical mechanical polishing slurry for cobalt applications
    Patent number: 10676646
    Abstract: A slurry that polishes surfaces or substrates which includes cobalt. The slurry further comprises an anionic and/or cationic surfactant, each of which has a phosphate group, a long chain alkyl group, or both. The slurry also includes a corrosion inhibitor, abrasives, removal rate enhancers, solvents, pH adjustors, and chelating agents. The pH of the slurry is preferably 8 or higher.
    Type: Grant
    Filed: May 21, 2018
    Date of Patent: June 9, 2020
    Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
    Inventors: Yannan Liang, Liqing Wen, Bin Hu, Hyosang Lee, Shu-Wei Chang, Sung Tsai Lin
  • CHEMICAL MECHANICAL POLISHING SLURRY FOR COBALT APPLICATIONS
    Publication number: 20180340094
    Abstract: A slurry that polishes surfaces or substrates which includes cobalt. The slurry further comprises an anionic and/or cationic surfactant, each of which has a phosphate group, a long chain alkyl group, or both. The slurry also includes a corrosion inhibitor, abrasives, removal rate enhancers, solvents, pH adjustors, and chelating agents. The pH of the slurry is preferably 8 or higher.
    Type: Application
    Filed: May 21, 2018
    Publication date: November 29, 2018
    Inventors: Yannan Liang, Liqing Wen, Bin Hu, Hyosang Lee, Shu-Wei Chang, Sung Tsai Lin