Patents by Inventor Yannan Liang

Yannan Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220195242
    Abstract: The present disclosure provides a composition that can polish substrates containing multiple metals, for example cobalt and tungsten. The compositions can provide favorable removable rates of those metals while mitigating corrosion, and show favorable polishing selectivity ratios with respect to other materials. The polishing composition of the present disclosure can include at least one abrasive, at least one organic acid, at least one anionic surfactant, at least one first amine compound comprising an alkylamine having a 6-24 carbon alkyl chain, at least one azole containing compound, an optional second amine compound comprising an aminoalcohol, an aqueous solvent, and, optionally a pH adjuster.
    Type: Application
    Filed: December 10, 2021
    Publication date: June 23, 2022
    Applicant: FUJIFILM ELECTRIC MATERIALS U.S.A., INC.
    Inventors: Qingmin Cheng, Bin Hu, Yannan Liang, Liqing (Richard) Wen
  • Publication number: 20220195241
    Abstract: A polishing composition includes at least one abrasive, at least one organic acid, at least one anionic surfactant comprising at least a phosphate, at least one phosphonic acid compound having a molecular weight below 500 g/mol, at least one azole containing compound, at least one alkylamine compound having a 6-24 carbon alkyl chain, and an aqueous solvent, and optionally, a pH adjuster.
    Type: Application
    Filed: December 10, 2021
    Publication date: June 23, 2022
    Applicant: FUJIFILM ELECTRIC MATERIALS U.S.A., INC.
    Inventors: Yannan Liang, Bin Hu, Ting-Kai Huang, Shu-Wei Chang, Liqing (Richard) Wen
  • Publication number: 20220162478
    Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.
    Type: Application
    Filed: February 11, 2022
    Publication date: May 26, 2022
    Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
    Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
  • Publication number: 20220135840
    Abstract: This disclosure relates polishing compositions that include (1) at least one abrasive; (2) at least one organic acid or a salt thereof; (3) at least one first amine compound, the at least one first amine compound including an alkylamine having a 6-24 carbon alkyl chain; (4) at least one second amine compound containing at least two nitrogen atoms, the second amine compound being different from the first amine compound; and (5) an aqueous solvent.
    Type: Application
    Filed: October 25, 2021
    Publication date: May 5, 2022
    Inventors: Qingmin Cheng, Bin Hu, Yannan Liang, Hyosang Lee, Liqing Wen, Yibin Zhang, Abhudaya Mishra
  • Patent number: 11279850
    Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: March 22, 2022
    Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
    Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
  • Publication number: 20210301177
    Abstract: This disclosure features a polishing composition that includes at least one abrasive; at least one first corrosion inhibitor that includes a phosphate or a phosphonate group; at least one complexing agent; at least one second corrosion inhibitor that is at least one azole compound; and optionally a pH adjuster.
    Type: Application
    Filed: March 29, 2021
    Publication date: September 30, 2021
    Inventors: James McDonough, Ting-Kai Huang, Yannan Liang, Shu-Wei Chang, Sung Tsai Lin, Liqing Wen
  • Publication number: 20210261822
    Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.
    Type: Application
    Filed: May 12, 2021
    Publication date: August 26, 2021
    Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
    Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
  • Publication number: 20210253903
    Abstract: A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.
    Type: Application
    Filed: February 8, 2021
    Publication date: August 19, 2021
    Inventors: Ting-Kai Huang, Tawei Lin, Bin Hu, Liqing Wen, Yannan Liang
  • Publication number: 20210253904
    Abstract: A polishing composition, includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a ruthenium removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.
    Type: Application
    Filed: February 8, 2021
    Publication date: August 19, 2021
    Inventors: Ting-Kai Huang, Tawei Lin, Bin Hu, Liqing Wen, Yannan Liang
  • Patent number: 11034859
    Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.
    Type: Grant
    Filed: March 11, 2019
    Date of Patent: June 15, 2021
    Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
    Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
  • Publication number: 20210108106
    Abstract: A polishing composition includes an abrasive; an optional pH adjuster; a barrier film removal rate enhancer; a TEOS removal rate inhibitor; a cobalt removal rate enhancer; an azole-containing corrosion inhibitor; and a cobalt corrosion inhibitor.
    Type: Application
    Filed: October 6, 2020
    Publication date: April 15, 2021
    Inventors: Yannan Liang, Bin Hu, Liqing Wen, Shu-Wei Chang
  • Publication number: 20210087431
    Abstract: A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a first low-k removal rate inhibitor; a second low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a cobalt corrosion inhibitor. This disclosure also relates to a method of polishing a substrate that comprises cobalt using the polishing compositions described herein.
    Type: Application
    Filed: September 18, 2020
    Publication date: March 25, 2021
    Inventors: Yannan Liang, Liqing Wen, Bin Hu, Tawei Lin
  • Patent number: 10676646
    Abstract: A slurry that polishes surfaces or substrates which includes cobalt. The slurry further comprises an anionic and/or cationic surfactant, each of which has a phosphate group, a long chain alkyl group, or both. The slurry also includes a corrosion inhibitor, abrasives, removal rate enhancers, solvents, pH adjustors, and chelating agents. The pH of the slurry is preferably 8 or higher.
    Type: Grant
    Filed: May 21, 2018
    Date of Patent: June 9, 2020
    Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
    Inventors: Yannan Liang, Liqing Wen, Bin Hu, Hyosang Lee, Shu-Wei Chang, Sung Tsai Lin
  • Publication number: 20180340094
    Abstract: A slurry that polishes surfaces or substrates which includes cobalt. The slurry further comprises an anionic and/or cationic surfactant, each of which has a phosphate group, a long chain alkyl group, or both. The slurry also includes a corrosion inhibitor, abrasives, removal rate enhancers, solvents, pH adjustors, and chelating agents. The pH of the slurry is preferably 8 or higher.
    Type: Application
    Filed: May 21, 2018
    Publication date: November 29, 2018
    Inventors: Yannan Liang, Liqing Wen, Bin Hu, Hyosang Lee, Shu-Wei Chang, Sung Tsai Lin