Patents by Inventor Yan Ni LI
Yan Ni LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210399001Abstract: Various embodiments disclose a 3D memory device, including a substrate; a plurality of conductor layers disposed on the substrate; a plurality of NAND strings disposed on the substrate; and a plurality of slit structures disposed on the substrate. The plurality of NAND strings can be arranged perpendicular to the substrate and in a hexagonal lattice orientation including a plurality of hexagons, and each hexagon including three pairs of sides with a first pair perpendicular to a first direction and parallel to a second direction. The second direction is perpendicular to the first direction. The plurality of slit structures can extend in the first direction.Type: ApplicationFiled: September 2, 2021Publication date: December 23, 2021Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Xiaowang DAI, Zhenyu LU, Jun CHEN, Qian TAO, Yushi HU, Jifeng ZHU, Jin Wen DONG, Ji XIA, Zhong ZHANG, Yan Ni LI
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Patent number: 11133325Abstract: Various embodiments disclose a 3D memory device, including a substrate; a plurality of conductor layers disposed on the substrate; a plurality of NAND strings disposed on the substrate; and a plurality of slit structures disposed on the substrate. The plurality of NAND strings can be arranged perpendicular to the substrate and in a hexagonal lattice orientation including a plurality of hexagons, and each hexagon including three pairs of sides with a first pair perpendicular to a first direction and parallel to a second direction. The second direction is perpendicular to the first direction. The plurality of slit structures can extend in the first direction.Type: GrantFiled: September 22, 2020Date of Patent: September 28, 2021Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Xiaowang Dai, Zhenyu Lu, Jun Chen, Qian Tao, Yushi Hu, Jifeng Zhu, Jin Wen Dong, Ji Xia, Zhong Zhang, Yan Ni Li
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Patent number: 11114439Abstract: Disclosed is a method for forming a staircase structure of 3D memory. The method includes providing a substrate, forming an alternating layer stack over the substrate, forming a plurality of block regions over a surface of the alternating layer stack, forming a first plurality of staircase structures to expose a portion of a first number of top-most layer stacks at each of the block regions and removing the first number of the layer stacks at a second plurality of staircase structures at each of the block regions.Type: GrantFiled: August 27, 2020Date of Patent: September 7, 2021Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Zhong Zhang, Yan Ni Li
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Publication number: 20210005625Abstract: Various embodiments disclose a 3D memory device, including a substrate; a plurality of conductor layers disposed on the substrate; a plurality of NAND strings disposed on the substrate; and a plurality of slit structures disposed on the substrate. The plurality of NAND strings can be arranged perpendicular to the substrate and in a hexagonal lattice orientation including a plurality of hexagons, and each hexagon including three pairs of sides with a first pair perpendicular to a first direction and parallel to a second direction. The second direction is perpendicular to the first direction. The plurality of slit structures can extend in the first direction.Type: ApplicationFiled: September 22, 2020Publication date: January 7, 2021Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Xiaowang DAI, Zhenyu LU, Jun CHEN, Qian TAO, Yushi HU, Jifeng ZHU, Jin Wen DONG, Ji XIA, Zhong ZHANG, Yan Ni LI
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Publication number: 20200395361Abstract: Disclosed is a method for forming a staircase structure of 3D memory. The method includes providing a substrate, forming an alternating layer stack over the substrate, forming a plurality of block regions over a surface of the alternating layer stack, forming a first plurality of staircase structures to expose a portion of a first number of top-most layer stacks at each of the block regions and removing the first number of the layer stacks at a second plurality of staircase structures at each of the block regions.Type: ApplicationFiled: August 27, 2020Publication date: December 17, 2020Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Zhong ZHANG, Yan Ni LI
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Patent number: 10847528Abstract: Various embodiments disclose a 3D memory device, including a substrate; a plurality of conductor layers disposed on the substrate; a plurality of NAND strings disposed on the substrate; and a plurality of slit structures disposed on the substrate. The plurality of NAND strings can be arranged perpendicular to the substrate and in a hexagonal lattice orientation including a plurality of hexagons, and each hexagon including three pairs of sides with a first pair perpendicular to a first direction and parallel to a second direction. The second direction is perpendicular to the first direction. The plurality of slit structures can extend in the first direction.Type: GrantFiled: April 13, 2020Date of Patent: November 24, 2020Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Xiaowang Dai, Zhenyu Lu, Jun Chen, Qian Tao, Yushi Hu, Jifeng Zhu, Jin Wen Dong, Ji Xia, Zhong Zhang, Yan Ni Li
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Patent number: 10790285Abstract: Disclosed is a method for forming a staircase structure of 3D memory. The method includes providing a substrate, forming an alternating layer stack over the substrate, forming a plurality of block regions over a surface of the alternating layer stack, forming a first plurality of staircase structures to expose a portion of a first number of top-most layer stacks at each of the block regions and removing the first number of the layer stacks at a second plurality of staircase structures at each of the block regions.Type: GrantFiled: October 22, 2018Date of Patent: September 29, 2020Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Zhong Zhang, Yan Ni Li
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Publication number: 20200243553Abstract: Various embodiments disclose a 3D memory device, including a substrate; a plurality of conductor layers disposed on the substrate; a plurality of NAND strings disposed on the substrate; and a plurality of slit structures disposed on the substrate. The plurality of NAND strings can be arranged perpendicular to the substrate and in a hexagonal lattice orientation including a plurality of hexagons, and each hexagon including three pairs of sides with a first pair perpendicular to a first direction and parallel to a second direction. The second direction is perpendicular to the first direction. The plurality of slit structures can extend in the first direction.Type: ApplicationFiled: April 13, 2020Publication date: July 30, 2020Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Xiaowang DAI, Zhenyu LU, Jun CHEN, Qian TAO, Yushi HU, Jifeng ZHU, Jin Wen DONG, Ji XIA, Zhong ZHANG, Yan Ni LI
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Patent number: 10644015Abstract: Various embodiments disclose a 3D memory device, including a substrate; a plurality of conductor layers disposed on the substrate; a plurality of NAND strings disposed on the substrate; and a plurality of slit structures disposed on the substrate. The plurality of NAND strings can be arranged perpendicular to the substrate and in a hexagonal lattice orientation including a plurality of hexagons, and each hexagon including three pairs of sides with a first pair perpendicular to a first direction and parallel to a second direction. The second direction is perpendicular to the first direction. The plurality of slit structures can extend in the first direction.Type: GrantFiled: September 10, 2018Date of Patent: May 5, 2020Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Xiaowang Dai, Zhenyu Lu, Jun Chen, Qian Tao, Yushi Hu, Jifeng Zhu, Jin Wen Dong, Ji Xia, Zhong Zhang, Yan Ni Li
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Publication number: 20200051983Abstract: Disclosed is a method for forming a staircase structure of 3D memory. The method includes providing a substrate, forming an alternating layer stack over the substrate, forming a plurality of block regions over a surface of the alternating layer stack, forming a first plurality of staircase structures to expose a portion of a first number of top-most layer stacks at each of the block regions and removing the first number of the layer stacks at a second plurality of staircase structures at each of the block regions.Type: ApplicationFiled: October 22, 2018Publication date: February 13, 2020Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Zhong ZHANG, Yan Ni LI
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Publication number: 20190096901Abstract: Various embodiments disclose a 3D memory device, including a substrate; a plurality of conductor layers disposed on the substrate; a plurality of NAND strings disposed on the substrate; and a plurality of slit structures disposed on the substrate. The plurality of NAND strings can be arranged perpendicular to the substrate and in a hexagonal lattice orientation including a plurality of hexagons, and each hexagon including three pairs of sides with a first pair perpendicular to a first direction and parallel to a second direction. The second direction is perpendicular to the first direction. The plurality of slit structures can extend in the first direction.Type: ApplicationFiled: September 10, 2018Publication date: March 28, 2019Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Xiaowang DAI, Zhenyu LU, Jun CHEN, Qian TAO, Yushi HU, Jifeng ZHU, Jin Wen DONG, Ji Xia, Zhong ZHANG, Yan Ni LI