Patents by Inventor Yannick C. Le Tiec

Yannick C. Le Tiec has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Contact isolation scheme for thin buried oxide substrate devices
    Patent number: 9105691
    Abstract: A method of forming a semiconductor-on-insulator (SOI) device includes defining a shallow trench isolation (STI) structure in an SOI substrate, the SOI substrate including a bulk layer, a buried insulator (BOX) layer over the bulk layer, and an SOI layer over the BOX layer; forming a doped region in a portion of the bulk layer corresponding to a lower location of the STI structure, the doped region extending laterally into the bulk layer beneath the BOX layer; selectively etching the doped region of the bulk layer with respect to undoped regions of the bulk layer such that the lower location of the STI structure undercuts the BOX layer; and filling the STI structure with an insulator fill material.
    Type: Grant
    Filed: April 9, 2013
    Date of Patent: August 11, 2015
    Assignee: International Business Machines Corporation
    Inventors: Kangguo Cheng, Bruce B. Doris, Laurent Grenouillet, Ali Khakifirooz, Yannick C. Le Tiec, Qing Liu, Maud Vinet
  • CONTACT ISOLATION SCHEME FOR THIN BURIED OXIDE SUBSTRATE DEVICES
    Publication number: 20140302661
    Abstract: A method of forming a semiconductor-on-insulator (SOI) device includes defining a shallow trench isolation (STI) structure in an SOI substrate, the SOI substrate including a bulk layer, a buried insulator (BOX) layer over the bulk layer, and an SOI layer over the BOX layer; forming a doped region in a portion of the bulk layer corresponding to a lower location of the STI structure, the doped region extending laterally into the bulk layer beneath the BOX layer; selectively etching the doped region of the bulk layer with respect to undoped regions of the bulk layer such that the lower location of the STI structure undercuts the BOX layer; and filling the STI structure with an insulator fill material.
    Type: Application
    Filed: April 9, 2013
    Publication date: October 9, 2014
    Applicant: International Business Machines Corporation
    Inventors: Kangguo Cheng, Bruce B. Doris, Laurent Grenouillet, Ali Khakifirooz, Yannick C. Le Tiec, Qing Liu, Maud Vinet