Patents by Inventor Yannick S. Loquet

Yannick S. Loquet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Improved SiCOH Hardmask with Graded Transition Layers
    Publication number: 20150028491
    Abstract: A structure and method for fabricating an improved SiCOH hardmask with graded transition layers having an improved profile for forming sub-20 nm back end of the line (BEOL) metallized interconnects are provided. In one embodiment, the improved hardmask may be comprised of five layers: an oxide adhesion layer, a graded transition layer, a dielectric layer, an inverse graded transition layer, and an oxide layer. In another embodiment, the improved hardmask may be comprised of four layers; an oxide adhesion layer, a graded transition layer, a dielectric layer, and an oxide layer. In another embodiment, a method of forming an improved hardmask may comprise a continuous five step plasma enhanced chemical vapor deposition (PECVD) process utilizing a silicon precursor, a porogen, and oxygen. In yet another embodiment, a method of forming an improved hardmask may comprise a continuous four step PECVD process utilizing a silicon precursor, a porogen, and oxygen.
    Type: Application
    Filed: July 25, 2013
    Publication date: January 29, 2015
    Applicant: International Business Machine Corporation
    Inventors: MATTHEW S. ANGYAL, YANNICK S. LOQUET, YANN A. MIGNOT, SON V. NGUYEN, MUTHUMANICKAM SANKARAPANDIAN, HOSADURGA SHOBHA
  • SiCOH hardmask with graded transition layers
    Patent number: 8927442
    Abstract: A structure and method for fabricating an improved SiCOH hardmask with graded transition layers having an improved profile for forming sub-20 nm back end of the line (BEOL) metallized interconnects are provided. In one embodiment, the improved hardmask may be comprised of five layers: an oxide adhesion layer, a graded transition layer, a dielectric layer, an inverse graded transition layer, and an oxide layer. In another embodiment, the improved hardmask may be comprised of four layers; an oxide adhesion layer, a graded transition layer, a dielectric layer, and an oxide layer. In another embodiment, a method of forming an improved hardmask may comprise a continuous five step plasma enhanced chemical vapor deposition (PECVD) process utilizing a silicon precursor, a porogen, and oxygen. In yet another embodiment, a method of forming an improved hardmask may comprise a continuous four step PECVD process utilizing a silicon precursor, a porogen, and oxygen.
    Type: Grant
    Filed: July 25, 2013
    Date of Patent: January 6, 2015
    Assignee: International Business Machines Corporation
    Inventors: Matthew S. Angyal, Yannick S. Loquet, Yann A. Mignot, Son V. Nguyen, Muthumanickam Sankarapandian, Hosadurga Shobha