Abstract: The invention primarily relates to a photovoltaic module (1) obtained from a stack comprising: a first front layer (2); a plurality of photovoltaic cells (4); an encapsulating assembly (3) obtained by joining a front layer (3a) and a rear layer (3b) of an encapsulating material; a second rear layer (5). The first layer (2) comprises: a front layer made of a polymer material (2a); a front assembly (2b, 2c) comprising an interface front layer (2b) and a glass front layer (2c), with a thickness less than or equal to 2 mm, said front assembly (2b, 2c) being located between the polymer front layer (2a) and the encapsulating assembly (3), and the interface front layer (2b) being located between the polymer front layer (2a) and the glass front layer (2c). The front layer (3a) and the rear layer (3b) of an encapsulating material have a Young's modulus at 25° C. of strictly less than 50 MPa and of strictly greater than 150 Mpa, respectively.

Abstract: A photovoltaic module obtained from a stack includes: a first transparent layer forming the front face; a plurality of photovoltaic cells; an assembly encapsulating the plurality of cells; and a second layer forming the rear face. The first layer includes: a front layer made of at least one polymer material; at least one front assembly comprising an interface front layer and a glass front layer, with a thickness smaller than or equal to 2 mm, the at least one front assembly being located between the polymer front layer and the encapsulating assembly, and the interface front layer of the at least one front assembly being located between the polymer front layer and the glass front layer.

Abstract: The invention relates to a lightweight photovoltaic module (1) comprising: a transparent first layer (2) forming the front face, photovoltaic cells (4), an assembly (3) encapsulating the photovoltaic cells (4), and a second layer (5), the encapsulating assembly (3) and the photovoltaic cells (4) being arranged between the first (2) and the second (5) layer. The invention is characterised in that the first layer (2) comprises a polymer material and has a thickness (e2) of less than 50 ?m, in that the second layer (5) comprises at least one composite material of the prepreg type containing polymer resin and fibres and has a areal weight of less than 150 g/m2, and in that the encapsulating assembly (3) has a maximum thickness (e3) of less than 150 ?m.

Abstract: The invention relates to a lightweight photovoltaic module (1) comprising: a transparent first layer (2) forming the front face, photovoltaic cells (4), an assembly (3) encapsulating the photovoltaic cells (4), and a second layer (5), the encapsulating assembly (3) and the photovoltaic cells (4) being arranged between the first (2) and the second (5) layer. The invention is characterised in that the first layer (2) comprises a polymer material and has a thickness (e2) of less than 50 ?m, in that the second layer (5) comprises at least one composite material of the prepreg type containing polymer resin and fibres and has a areal weight of less than 150 g/m2, and in that the encapsulating assembly (3) has a maximum thickness (e3) of less than 150 ?m.

Abstract: The present invention relates to a method for manufacturing a monolithic silicon wafer (10) comprising multiple vertical junctions (2) having an alternation of n-doped areas and p-doped areas, including at least the steps of: (i) providing a liquid bath (100) including silicon, at least one n-type doping agent and at least one p-type doping agent; (ii) proceeding to directionally solidify the silicon in a direction (I), varying the convection-diffusion parameters thereof in order to alternate the growth of n-doped silicon layers (101) and p-doped silicon layers (102); and (iii) cutting a slice (104), parallel to the direction (I), of the multi-layer structure obtained at the end of the step (ii), such as to obtain said expected wafer (10).

Abstract: The present invention relates to a method for manufacturing a monolithic silicon wafer (10) comprising multiple vertical junctions (2) having an alternation of n-doped areas and p-doped areas, including at least the steps of: (i) providing a liquid bath (100) including silicon, at least one n-type doping agent and at least one p-type doping agent; (ii) proceeding to directionally solidify the silicon in a direction (I), varying the convection-diffusion parameters thereof in order to alternate the growth of n-doped silicon layers (101) and p-doped silicon layers (102); and (iii) cutting a slice (104), parallel to the direction (I), of the multi-layer structure obtained at the end of the step (ii), such as to obtain said expected wafer (10).

Abstract: Method for formation of at least one electrical conductor on a semiconductor material (1), characterized in that it comprises the following steps: (E1)—deposition by serigraphy of a first high-temperature paste; (E2)—deposition by serigraphy of a second low-temperature paste at least partially superposed onto the first high-temperature paste deposited during the preceding step.

Abstract: A photovoltaic cell including a substrate composed of a semiconductor of a first type of conductivity including two main faces substantially parallel with one another, the substrate including a plurality of blind holes, openings of which are positioned in a single one of the two main faces, and the blind holes filled by a semiconductor of a second type of conductivity opposed to the first type of conductivity forming an emitter of the photovoltaic cell. The substrate forms a base of the photovoltaic cell. First collector pins composed of a semiconductor of the second type of conductivity are in contact with the emitter of the photovoltaic cell, and second collector pins composed of a semiconductor of the first type of conductivity are in contact with the substrate and interdigitated with the first collector pins.

Abstract: A method of producing a photovoltaic cell. A passivation layer based on an intrinsic amorphous semiconductor is deposited on a back surface of a substrate based on a crystalline semiconductor. A first sacrificial mask including at least one through-opening on the passivation layer is screen-printed at a temperature less than or equal to 250° C. A doped amorphous semiconductor layer of a first type of conductivity is deposited at least in the opening. The first sacrificial mask is removed, leaving at least one doped amorphous semiconductor pad of the first type of conductivity remaining at the opening of the first sacrificial mask.

Abstract: The invention relates to a method of producing a photovoltaic cell (100), comprising at least the steps of: a) deposition of a passivation layer (12) based on an intrinsic amorphous semiconductor on a back surface of a substrate (2) based on a crystalline semiconductor, b) screen-printing of a first sacrificial mask comprising at least one through-opening on the passivation layer, at a temperature less than or equal to 250° C., c) deposition of a doped amorphous semiconductor layer (20) of a first type of conductivity at least in the opening, d) removal of the first sacrificial mask, leaving at least one doped amorphous semiconductor pad (20) of the first type of conductivity remaining at the opening of the first sacrificial mask.

Abstract: Method for producing doped regions on the rear face of a photovoltaic cell. A doping paste with a first type of conductivity is deposited on a rear face of a semiconductor-based substrate according to a pattern consistent with the desired distribution of regions doped with the first type of conductivity. Then, an oxide layer is deposited at least on the portions of the rear face of the substrate not covered with the doping paste. Finally, an annealing of the substrate diffuses the doping agents in the substrate and forms doped regions under the doping paste.

Abstract: Method for producing doped regions on the rear face of a photovoltaic cell. A doping paste with a first type of conductivity is deposited on a rear face of a semiconductor-based substrate according to a pattern consistent with the desired distribution of regions doped with the first type of conductivity. Then, an oxide layer is deposited at least on the portions of the rear face of the substrate not covered with the doping paste. Finally, an annealing of the substrate diffuses the doping agents in the substrate and forms doped regions under the doping paste.