Abstract: The present application discloses a method for preparing a TEM sample, comprising: step 1, forming a first protective layer to non-full fill a deep trench; step 2, performing a first time of front and rear side cutting using a FIB, so as to form the TEM sample having a first thickness, and a via in the deep trench is exposed from the front side and the rear side of the TEM sample; step 3, forming a second material layer, which fully fills the exposed via from the front side and the rear side of the TEM sample; and step 4, performing a second time of front and rear side cutting of a target area on the chip sample using the FIB, so as to reduce the thickness of the TEM sample to a target thickness.

Abstract: The present application discloses a method for preparing a TEM sample, including the following steps: step 1: providing a thin-film pre-sample with undesirable voids; step 2: performing a first cutting with a first FIB to form the TEM sample located in the target region of the thin-film pre-sample. The first thickness is reached after the first cutting. The voids are exposed from the front surface or the back surface of the TEM sample after the first cutting; step 3: depositing a first material layer by an ALD process to fill the voids in the TEM sample; step 4: performing the second cutting with a second FIB to form the target thickness of the TEM sample in the target region of the thin-film pre-sample. The present application can reduce or eliminate ion beam cutting marks related to the voids in the thin-film pre-sample.

Abstract: The present application discloses a method for preparing a TEM sample, including the following steps: step 1: providing a thin-film pre-sample with undesirable voids; step 2: performing a first cutting with a first FIB to form the TEM sample located in the target region of the thin-film pre-sample. The first thickness is reached after the first cutting. The voids are exposed from the front surface or the back surface of the TEM sample after the first cutting; step 3: depositing a first material layer by an ALD process to fill the voids in the TEM sample; step 4: performing the second cutting with a second FIB to form the target thickness of the TEM sample in the target region of the thin-film pre-sample. The present application can reduce or eliminate ion beam cutting marks related to the voids in the thin-film pre-sample.

Abstract: The present application provides a method for preparing a test sample of a semiconductor device. In an initial orientation, a side surface of the sample substrate exposes a cross section of the semiconductor device to be tested. The semiconductor device has a porous structure on the cross section. Then a filling material is deposited on the porous structure on the cross section to be tested. Next, cutting the sample substrage in a direction perpendicular to the sample substrate, when the sample substrate is in the initial orientation to obtain a sheet test sample, wherein a side surface of the sheet test sample is the cross section to be tested. The method mitigate porous structure effect on a prepared TEM sample, thereby improving quality of a TEM image.