Patents by Inventor YAN RU YANG

YAN RU YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100020599
    Abstract: A multi-level flash memory comprises a semiconductor substrate, a gate structure having a lower block positioned in the semiconductor substrate and an upper block positioned on the semiconductor substrate, and a plurality of storage structures separated by the gate structure. The upper block connects to the lower block of the gate structure, and each of the storage structures includes a charge-trapping site and an insulation structure surrounding the charge-trapping site.
    Type: Application
    Filed: July 23, 2008
    Publication date: January 28, 2010
    Applicant: PROMOS TECHNOLOGIES INC.
    Inventors: LIH WEI LIN, WEI SHENG HSU, YAN RU YANG, YEN WEN CHEN
  • Publication number: 20100022058
    Abstract: A method for preparing a multi-level flash memory comprising the steps of forming a recess in a semiconductor substrate, forming a plurality of storage structures at the sides of the recess, and forming a gate structure having a lower block in the recess and an upper block on the lower block. The storage structures are separated by the gate structure, and each of the storage structures includes a charge-trapping site and an insulation structure surrounding the charge-trapping site.
    Type: Application
    Filed: July 23, 2008
    Publication date: January 28, 2010
    Applicant: PROMOS TECHNOLOGIES INC.
    Inventors: LIH WEI LIN, WEI SHENG HSU, YAN RU YANG, YEN WEN CHEN