Abstract: The present invention discloses a method for backing up data in a case of a power failure of a storage system including: when a power failure is detected, acquiring current refresh progress of a buffer in a storage system, an address, in the buffer, of data that is in the buffer and needs to be backed up to a non-volatile memory in the storage system, and a first time required for backing up the data; calculating, according to the current refresh progress of the buffer and the address of the data in the buffer, a second time for which the data can at least keep being not lost since a last refresh; and stopping refreshing the buffer, and backing up the data to the non-volatile memory, if the second time is greater than the first time.

Abstract: Embodiments of the present invention disclose a PCI express device, and a link energy management method and device. The method includes: obtaining, by a first device, adjustment information for performing adjustment processing on a current rate and/or bit width of a PCI express link; stopping, by the first device, data sending, and clearing a master enable bit of a configuration space command register of a second device at an opposite end of the link, so that the second device stops data sending after current data sending is finished; performing, by the first device, adjustment processing on the rate and/or bit width of the link according to the adjustment information; resuming, by the first device, the data sending, and resetting the master enable bit, so that the first device and the second device send and receive data again at a rate and/or bit width that is obtained after the adjustment processing.

Abstract: This invention discloses a hard disk data recovery method, apparatus, and system. The method includes: recording a logical block address corresponding to erroneous data if an error is discovered when data is read from the hard disk; performing a recovery operation for data at a first physical block address corresponding to the logical block address according to a preset algorithm to obtain recovered data; and sending an instruction of writing the recovered data into the logical block address to the hard disk so that the hard disk writes the recovered data into the logical block address according to the instruction, where the logical block address corresponds to a remapped second physical block address. Therefore, the method repairs an erroneous sector or a bad block of the hard disk quickly and improves efficiency of repairing the erroneous sector of the hard disk or the bad block of the hard disk.

Abstract: A method for setting a working mode of a multi-processor system includes: detecting, after a current board is inserted into a slot of the backplane, whether an associated board exists on the backplane; detecting, if the associated board exists, whether the associated board is in an independent working state; powering on the current board according to a slave working mode if the associated board is not in an independent working state, so as to work coordinately with the associated board; detecting, within a predetermined detection time if the associated board does not exist, whether a board is inserted into another slot of the backplane except the slot of the master board; and powering on the current board according to a master working mode if it is detected that the board is inserted, so as to work coordinately with the board in the other slot.

Abstract: The embodiments of the present invention disclose a nonvolatile memory and an electronic device, where each time the nonvolatile memory is powered on, an exchanger is used to implement a random exchange of at least one address subsignal and its inverted signal in a bank decoder and/or a row decoder in a bank and/or a column decoder in a bank, which causes that data stored before the nonvolatile memory is powered off is interrupted when the nonvolatile memory is powered off and then powered on and that data stored in the nonvolatile memory cannot be read sequentially from original storage addresses to achieve an encrypting effect and increase security of the data stored in the nonvolatile memory.

Abstract: An array substrate including a plurality of pixel units each including a 2×2 sub-pixel area matrix, where each of the sub-pixel areas includes three sub-pixel electrodes. The strip electrode of at least one of the sub-pixel electrodes from each of the first sub-pixel area and the third sub-pixel area is parallel to a first direction, and the strip electrode of at least one of the sub-pixel electrodes from each of the second sub-pixel area and the fourth sub-pixel area is parallel to a second direction. The first direction intersects with the second direction. Also, a first area is defined by the sub-pixel electrodes including the strip electrodes parallel to the first direction and the sub-pixel electrodes including the strip electrodes parallel to the second direction, and the first area is provided with a sub-pixel switch.

Abstract: An array substrate including a plurality of pixel units each including a 2×2 sub-pixel area matrix, where each of the sub-pixel areas includes three sub-pixel electrodes. The strip electrode of at least one of the sub-pixel electrodes from each of the first sub-pixel area and the third sub-pixel area is parallel to a first direction, and the strip electrode of at least one of the sub-pixel electrodes from each of the second sub-pixel area and the fourth sub-pixel area is parallel to a second direction. The first direction intersects with the second direction. Also, a first area is defined by the sub-pixel electrodes including the strip electrodes parallel to the first direction and the sub-pixel electrodes including the strip electrodes parallel to the second direction, and the first area is provided with a sub-pixel electrode.

Abstract: A TFT array substrate is disclosed. The TFT array substrate includes a base, a display region disposed on the base, and a gate drive circuit region disposed on the base. The display region includes a plurality of data lines extending along a first direction, and a plurality of scan lines extending along a second direction, the scan lines intersecting and electrically insulated from the data lines. In addition, the gate drive circuit region includes at least one first capacitor, and a plurality of TFTs which are separated from each other to form a margin region between the TFTs, where the first capacitor is disposed in the margin region.

Abstract: A write operation method for a phase change memory (PCM) is disclosed. The method includes when a PCM performs a write operation, generating a corresponding voltage pulse signal according to to-be-written data, and applying the voltage pulse signal to a phase change material included in a phase change storage unit corresponding to the to-be-written data and applying the voltage pulse signal to a voltage divider resistor serially connected to the phase change material; comparing voltage values at both ends of a sampling resistor with a threshold voltage to generate an indicator value; determining, according to the indicator value, whether data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data; and skipping writing if the same; or writing if different, thus reducing the delay time of writing data into the phase change storage unit.

Abstract: An array substrate including a plurality of pixel units each including a 2×2 sub-pixel area matrix, where each of the sub-pixel areas includes three sub-pixel electrodes. The strip electrode of at least one of the sub-pixel electrodes from each of the first sub-pixel area and the third sub-pixel area is parallel to a first direction, and the strip electrode of at least one of the sub-pixel electrodes from each of the second sub-pixel area and the fourth sub-pixel area is parallel to a second direction. The first direction intersects with the second direction. Also, a first area is defined by the sub-pixel electrodes including the strip electrodes parallel to the first direction and the sub-pixel electrodes including the strip electrodes parallel to the second direction, and the first area is provided with a sub-pixel electrode.

Abstract: An array substrate including a plurality of pixel units each including a 2×2 sub-pixel area matrix, where each of the sub-pixel areas includes three sub-pixel electrodes. The strip electrode of at least one of the sub-pixel electrodes from each of the first sub-pixel area and the third sub-pixel area is parallel to a first direction, and the strip electrode of at least one of the sub-pixel electrodes from each of the second sub-pixel area and the fourth sub-pixel area is parallel to a second direction. The first direction intersects with the second direction. Also, a first area is defined by the sub-pixel electrodes including the strip electrodes parallel to the first direction and the sub-pixel electrodes including the strip electrodes parallel to the second direction, and the first area is provided with a sub-pixel switch.

Abstract: The invention provides an organic electroluminescent device and a manufacturing method thereof, and a display apparatus. The method for manufacturing the organic electroluminescent device of the invention includes using the following to form at least one function layer: preparing a solution of a material of the function layer, and forming a liquid material layer for the function layer using the solution of the material of the function layer; performing a vacuum drying on the liquid material layer for the function layer to form function layer. In the invention, a relatively dense film is formed by performing a vacuum drying on the function layer, and the residual organic solvent is effectively removed to avoid the formation of defects, so that the film becomes smooth and dense, which increases the carrier mobility in the film and is advantageous to the transport and recombination of electrons and holes.

Abstract: Provided are anthracene compound, method for preparing the same and use thereof, as well as organic electroluminescent device containing the same. The anthracene compound represented by a formula: wherein R is selected from C6-C19 aryl, fused ring aryl, or substituted or unsubstituted heterocyclic aryl.

Abstract: The present invention discloses a method for adjusting device power consumption including: grouping multiple devices into at least one device group, setting a group power consumption ceiling threshold (PCCT) for the device group, and setting a device PCCT for each device in the group; obtaining current total power consumption of the group, and when the current total power consumption of the group exceeds the group PCCT, determining whether current power consumption of each device in the group exceeds the device PCCT of the device; when the current power consumption of each device exceeds the device PCCT of the device, reducing power consumption of each device to the device PCCT of the device; and when current power consumption of a device exceeds a device PCCT of the device, setting a new PCCT for the device, and reducing power consumption of the device to/or less than the new PCCT.

Abstract: A method for transmitting keyboard, video, mouse (KVM) data includes converting, by a service board, KVM data into a KVM packet; sending the KVM packet to a switch board through a BASE channel, so that the switch board forwards the KVM packet to a remote console. The embodiments of the present invention are mainly applied to a process for implementing KVM data transmission based on ATCA architecture.

Abstract: The invention relates to organic electroluminescent materials and provides 9,10-bis[2-(p-substituted phenyl)pyrimidin-4-yl] anthracene compounds and methods of preparing the same, organic electroluminescent devices comprising the compounds, and organic electroluminescent display apparatus comprising the devices. The compounds of the invention are easy to be synthesized and can be used as blue-phosphorescent organic electroluminescent materials. Due to the inherent ability of the materials to block holes, there is no need to arrange a hole-blocking layer between a light-emitting layer and an electron transport layer, which simplifies the manufacturing process of full color display panels of organic electroluminescent display apparatus and reduces the manufacture cost and time. The organic electroluminescent devices made from the materials exhibit high luminous efficiency.

Abstract: The invention provides a 1,2,4-triazole-based derivative, a production process and use thereof, and an organic electroluminescent device. The invention belongs to the technical field of organic electroluminescence, and can give a blue light-emitting material having a higher luminescence efficiency. The 1,2,4-triazole-based derivative has a molecular structure of the following general formula, wherein A group represents an aromatic heterocyclic group having a carbon atom number of 8-18, a fused-ring aromatic group having a carbon atom number of 9-15, a fluorenyl group, or a triarylamino group. The 1,2,4-triazole-based derivative mentioned in the invention can be used in organic electroluminescent device.

Abstract: The embodiments of the present invention disclose a nonvolatile memory and an electronic device, where each time the nonvolatile memory is powered on, an exchanger is used to implement a random exchange of at least one address subsignal and its inverted signal in a bank decoder and/or a row decoder in a bank and/or a column decoder in a bank, which causes that data stored before the nonvolatile memory is powered off is interrupted when the nonvolatile memory is powered off and then powered on and that data stored in the nonvolatile memory cannot be read sequentially from original storage addresses to achieve an encrypting effect and increase security of the data stored in the nonvolatile memory.

Abstract: A write operation method for a phase change memory (PCM) is disclosed. The method includes when a PCM performs a write operation, generating a corresponding voltage pulse signal according to to-be-written data, and applying the voltage pulse signal to a phase change material included in a phase change storage unit corresponding to the to-be-written data and applying the voltage pulse signal to a voltage divider resistor serially connected to the phase change material; comparing voltage values at both ends of a sampling resistor with a threshold voltage to generate an indicator value; determining, according to the indicator value, whether data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data; and skipping writing if the same; or writing if different, thus reducing the delay time of writing data into the phase change storage unit.

Abstract: A memory extension system and method are provided. The system includes a processor, an extended memory, an extended chip, and multiple processor installation positions, where a memory installation position is provided in each processor installation position; the multiple processor installation positions are connected through a QuickPath Interconnect (QPI) interface, the processor is installed in at least one processor installation position, and at least one of the other processor installation positions is used as an extended installation position; the extended chip is installed in at least one extended installation position; and the extended memory is installed in a memory installation position. In this memory extension system, an extended chip is installed in another processor installation position, so that an existing processor can access an extended memory of the extended chip by using the extended chip.