Patents by Inventor Yanting Sun

Yanting Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing a semiconductor device
    Patent number: 10134591
    Abstract: This invention is directed toward a method for manufacturing a semiconductor device with a heterostructure comprises covering a semiconductor structure with a seed layer structure; forming one or more separated circularly shaped openings in the seed layer structure to expose the semiconductor structure therein, and leave the seed layer structure outside the one or more separated circularly shaped openings; forming an insulator layer thereon; etching the obtained structure to (i) expose at least a portion of the seed layer structure, such that the exposed at least portion of the seed layer structure surrounds each of the one or more separated circularly shaped openings, and (ii) optionally expose the semiconductor structure, in the one or more separated circularly shaped openings; and epitaxially growing a semiconductor layer from the exposed at least portion of the seed layer structure, firstly mainly vertically and then into each of the one or more separated circularly shaped openings until the epitaxially g
    Type: Grant
    Filed: October 7, 2014
    Date of Patent: November 20, 2018
    Assignee: Tandem Sun AB
    Inventor: Yanting Sun
  • Method For Manufacturing A Semiconductor Device And Semiconductor Device
    Publication number: 20170309482
    Abstract: This invention is directed toward a method for manufacturing a semiconductor device with a heterostructure comprises covering a semiconductor structure with a seed layer structure; forming one or more separated circularly shaped openings in the seed layer structure to expose the semiconductor structure therein, and leave the seed layer structure outside the one or more separated circularly shaped openings; forming an insulator layer thereon; etching the obtained structure to (i) expose at least a portion of the seed layer structure, such that the exposed at least portion of the seed layer structure surrounds each of the one or more separated circularly shaped openings, and (ii) optionally expose the semiconductor structure, in the one or more separated circularly shaped openings; and epitaxially growing a semiconductor layer from the exposed at least portion of the seed layer structure, firstly mainly vertically and then into each of the one or more separated circularly shaped openings until the epitaxially g
    Type: Application
    Filed: October 7, 2014
    Publication date: October 26, 2017
    Applicant: Tandem Sun AB
    Inventor: Yanting Sun
  • Method for manufacturing a semiconductor device based on epitaxial growth
    Patent number: 9293625
    Abstract: This invention relates to a method for manufacturing a semiconductor device and semiconductor manufactured thereby, including growing, from a seed island mesa, an abrupt hetero-junction comprising a semiconductor crystal with few crystal defects on a dissimilar substrate that can be used as light emitting and photovoltaic device.
    Type: Grant
    Filed: March 28, 2013
    Date of Patent: March 22, 2016
    Assignee: Tandem Sun AB
    Inventors: Yanting Sun, Sebastian Lourdudoss
  • METHOD FOR MANUFACTURING A SEMICONDUCTOR METHOD DEVICE BASED ON EPITAXIAL GROWTH
    Publication number: 20150063388
    Abstract: This invention relates to a method for manufacturing a semiconductor device and semiconductor manufactured thereby, including growing, from a seed island mesa, an abrupt hetero-junction comprising a semiconductor crystal with few crystal defects on a dissimilar substrate that can be used as light emitting and photovoltaic device.
    Type: Application
    Filed: March 28, 2013
    Publication date: March 5, 2015
    Inventors: Yanting Sun, Sebastian Lourdudoss