Patents by Inventor Yanwei CAO

Yanwei CAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transparent conductive oxide thin film and use thereof
    Patent number: 11982017
    Abstract: A method for fabricating a transparent conductive oxide thin film, the method comprising the following steps: fabricating Ba1-xLaxSnO3 using a solid-phase reaction method to obtain a BLSO magnetron sputtering target material; and fabricating a BLSO thin film by means of direct deposition with argon as a sputtering gas by using a SrTiO3, MgO, LaAlO3, (La,Sr)(Al,Ta)O3(LSAT), MgAl2O4 or Al2O3 single crystal substrate and the BLSO magnetron sputtering target material, such that the transparent conductive oxide thin film is fabricate is provided. During sputtering, the temperature of the substrate is 750° C.-950° C., and the deposition pressure of the Ar gas is 25-77 Pa. The room-temperature mobility of the transparent conductive oxide thin film can reach 115 cm2/V·s, the room-temperature carrier concentration can reach 1.2×1021 cm?3, and the room-temperature conductivity can reach 14,000 S/cm.
    Type: Grant
    Filed: June 11, 2021
    Date of Patent: May 14, 2024
    Assignee: NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING, CHINESE ACADEMY OF SCIENCES
    Inventors: Ruyi Zhang, Yanwei Cao, Yang Song, Shaoqin Peng, Jiachang Bi
  • NEW TRANSPARENT CONDUCTIVE OXIDE THIN FILM AND USE THEREOF
    Publication number: 20240003051
    Abstract: A method for fabricating a transparent conductive oxide thin film, the method comprising the following steps: fabricating Ba1-xLaxSnO3 using a solid-phase reaction method to obtain a BLSO magnetron sputtering target material; and fabricating a BLSO thin film by means of direct deposition with argon as a sputtering gas by using a SrTiO3, MgO, LaAlO3, (La,Sr)(Al,Ta)O3(LSAT), MgAl2O4 or Al2O3 single crystal substrate and the BLSO magnetron sputtering target material, such that the transparent conductive oxide thin film is fabricate is provided. During sputtering, the temperature of the substrate is 750° C.-950° C., and the deposition pressure of the Ar gas is 25-77 Pa. The room-temperature mobility of the transparent conductive oxide thin film can reach 115 cm2/V·s, the room-temperature carrier concentration can reach 1.2×1021 cm?3, and the room-temperature conductivity can reach 14,000 S/cm.
    Type: Application
    Filed: June 11, 2021
    Publication date: January 4, 2024
    Applicant: NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING, CHINESE ACADEMY OF SCIENCES
    Inventors: Ruyi ZHANG, Yanwei CAO, Yang SONG, Shaoqin PENG, Jiachang BI