Abstract: Provided are a photodetector chip, a proximity sensor, and an electronic device. The photodetector chip includes a first electrode, a substrate, a light absorption layer, a top layer, and a second electrode. The substrate is on one side of the first electrode. The light absorption layer is at one side of the substrate away from the first electrode. The top layer is at one side of the light absorption layer away from the substrate. The photodetector chip has an active region, the active region allows a detection signal to pass through, the top layer includes a first part corresponding to the active region, the first part has a thickness of 2.0 ?m˜6.0 ?m to absorb a signal with a wavelength less than 1300 nm and allow a detection signal with a wavelength greater than or equal to 1300 nm to pass through to reach the light absorption layer.

Abstract: The present invention relates to use of slow-releasing hydrogen sulfide organic donor ADT-OH drugs in the differentiation of neural precursor cells. ADT-OH can induce more directed differentiation of neural precursor cells into neurons and oligodendrocytes and less differentiation into astrocytes, promote the axon growth of neurons, and reduce the death of neural precursor cells, thereby providing a direction for the transplantation of neural precursor cells to repair damaged nerves. ADT-OH will likely become a new drug target for the clinical treatment of nervous system diseases.

Abstract: Embodiments of this application provide a Wi-Fi P2P connection method and apparatus, and a system. This can reduce time for providing a service via a Wi-Fi P2P connection, and improve user experience. A first device determines a probe request message. The probe request message includes service request information, and the service request information is used to request a first service. The first device sends the probe request message.

Abstract: A dynamic monitoring method for a rebound rate of wet spraying shotcrete includes converting a set of laser points obtained from scanning to a rock wall scanning surface relative coordinate system to form an initial geometric model of the rock face, calculating the initial rock wall volume, coarse spraying and fine spraying the shotcrete and performing the three-dimensional modeling calculations, and calculating the coarse spray rebound rate and the fine spray rebound rate, thereby solving the problem that at present, the estimated idealized data does not match the actual usage data, not only it is insufficient in quantification, but also the dynamic rebound rate of the wet spraying process is not understood, in which the rebound rate is inaccurately estimated, making it difficult to guide the adjustment of the shotcrete formula and the adjustment of the spray posture and speed, and thus the goal of process optimization cannot be achieved.

Abstract: A photodiode chip, a photodiode, and a method for controlling a wavelength of a photodiode are provided. The photodiode chip sequentially incudes, above a substrate, a grating layer and a ridge waveguide layer. The ridge waveguide layer includes multiple ridge waveguides. Each of the multiple ridge waveguides corresponds to one column of gratings in the multiple columns of gratings below. The grating layer includes multiple columns of gratings. At least two columns of gratings have different grating period pitches.

Abstract: Provided are a photoelectric chip, a manufacturing method and an installation method, which relate to the field of optical communication and transmission technologies. The chip is provided with a light-splitting groove (3), and the light-splitting groove (3) runs through an absorption layer (2) of the chip; the back of the chip is a light-entering side; the light-splitting groove (3) is configured to transmit and split out part (151) of incident light (15), and the other part (152) of the incident light (15) enters the absorption layer (2) for photovoltaic conversion. The photoelectric chip can split light and monitor optical power of the incident light.

Abstract: A quantum well structure, a method for processing a chip, and a chip are provided. The quantum well structure includes an indium aluminum arsenide (InAlAs) quantum well layer and an indium aluminum gallium arsenide (InAlGaAs) quantum well layer. The InAlAs quantum well layer is implemented as multiple InAlAs quantum well layers. The thickness of the InAlGaAs quantum well layer is the same as the thickness of the InAlAs quantum well layer. The InAlGaAs quantum well layer is disposed between two adjacent InAlAs quantum well layers. The thickness of the InAlAs quantum well layer ranges from 0.4 nm to 0.6 nm. The number of the multiple InAlAs quantum well layers ranges from 3 to 17.

Abstract: The present invention relates to use of slow-releasing hydrogen sulfide organic donor ADT-OH drugs in the differentiation of neural precursor cells. ADT-OH can induce more directed differentiation of neural precursor cells into neurons and oligodendrocytes and less differentiation into astrocytes, promote the axon growth of neurons, and reduce the death of neural precursor cells, thereby providing a direction for the transplantation of neural precursor cells to repair damaged nerves. ADT-OH will likely become a new drug target for the clinical treatment of nervous system diseases.

Abstract: Provided are a photodetector, a manufacturing method thereof, and a lidar system. A photosensitive region of the photodetector is circular and has a diameter range of 100-300 ?m. Compared with a conventional photodetector having a photosensitive region with a diameter of 50 ?m, the photodetector of the present invention can have a detection range greater than 200 m, responsivity greater than 20 A/W and a dark current less than 10 nA.

Abstract: Provided are a photodetector, a manufacturing method thereof, and a lidar system. A photosensitive region of the photodetector is circular and has a diameter range of 100-300 ?m. Compared with a conventional photodetector having a photosensitive region with a diameter of 50 ?m, the photodetector of the present invention can have a detection range greater than 200 m, responsivity greater than 20 A/W and a dark current less than 10 nA.

Abstract: Provided are a photoelectric chip, a manufacturing method and an installation method, which relate to the field of optical communication and transmission technologies. The chip is provided with a light-splitting groove (3), and the light-splitting groove (3) runs through an absorption layer (2) of the chip; the back of the chip is a light-entering side; the light-splitting groove (3) is configured to transmit and split out part (151) of incident light (15), and the other part (152) of the incident light (15) enters the absorption layer (2) for photovoltaic conversion. The photoelectric chip can split light and monitor optical power of the incident light.

Abstract: Disclosed are a catalyst suitable for the conversion of carbon monoxide with steam into carbon dioxide and hydrogen, and a process therewith for said conversion. Said catalyst comprises Co, Ni, Mo and/or W active components, TiO.sub.2 -containing carrier and non-alkali metal element promoter(s). Said process comprises reacting carbon monoxide feed gas containing 0.01% or more of H.sub.2 S by volume with steam in the presence of said catalyst at a temperature between 230 to 500.degree. C. under a pressure between 0 to 10 MPa (absolute) with a relatively high yield, whereby heavy fuel can be used as a source of carbon monoxide feed gas for such a process.