Abstract: Disclosed are a method for preparing 2-aryl malonamide and an application thereof. This method uses 2-(cyclohexenylidene) malononitrile as a raw material, which undergoes an aromatization-hydrolyzation reaction in the presence of an oxidant and water to produce 2-aryl malonamide by one step. Compared to the prior art, the method for preparing 2-aryl malonamide of this application has the following features and advantages: (1) this method employs a completely different synthetic strategy; (2) raw materials used in this method are easily obtained; (3) this method not only has high yield, but also does not require expensive metal catalysts. This method is lower-cost, suitable for the industrial production.

Abstract: Disclosed are a method for preparing 2-aryl malonamide and an application thereof. This method uses 2-(cyclohexenylidene) malononitrile as a raw material, which undergoes an aromatization-hydrolyzation reaction in the presence of an oxidant and water to produce 2-aryl malonamide by one step. Compared to the prior art, the method for preparing 2-aryl malonamide of this application has the following features and advantages: (1) this method employs a completely different synthetic strategy; (2) raw materials used in this method are easily obtained; (3) this method not only has high yield, but also does not require expensive metal catalysts. This method is lower-cost, suitable for the industrial production.

Abstract: Wheel arch liner for a vehicle comprising at least a structural porous fibrous layer extending longitudinal in a curved shape with a front end and a rear end wherein the porous fibrous layer is at least partly corrugated wherein the corrugations comprises alternating grooves and ridges and wherein at least the ridges are situated at the inner side of the curve shaped porous fibrous layer and wherein the grooves and ridges extend longitudinal transversal to the longitudinal curved shape.

Abstract: This invention provides a method for eliminating the surface stress of a silicon wafer comprising forming one or more anti-stress groove(s) on the surface of the silicon wafer. These anti-stress grooves can reduce or eliminate the surface stress of silicon wafer effectively to avoid the formation of slip lines and dislocation arrangements, which may induce the p-n junction to conduct or the leakage current to increase. The process is highly efficient and low in cost. It is simple to manage and does not require additional equipment beyond that already used for processing of silicon wafers.

Abstract: This invention provides a method for eliminating the surface stress of a silicon wafer comprising forming one or more anti-stress groove(s) on the surface of the silicon wafer. These anti-stress grooves can reduce or eliminate the surface stress of silicon wafer effectively to avoid the formation of slip lines and dislocation arrangements, which may induce the p-n junction to conduct or the leakage current to increase. The process is highly efficient and low in cost. It is simple to manage and does not require additional equipment beyond that already used for processing of silicon wafers.