Abstract: A thin film transistor and a manufacturing method therefor, an array substrate, and a display device. The thin film transistor includes an active layer, a gate insulating layer, and a gate electrode; the gate insulating layer is located on one side of the active layer; the gate electrode is located on one side of the gate insulating layer distant from the active layer; the gate electrode includes an opening a part of the active layer overlapped with the opening includes a first lightly doped region, a first heavily doped region, and a second lightly doped region that are sequentially arranged along a first direction parallel to a plane where the active layer is located.

Abstract: A thin film transistor and a manufacturing method therefor, an array substrate, and a display device. The thin film transistor includes an active layer, a gate insulating layer, and a gate electrode; the gate insulating layer is located on one side of the active layer; the gate electrode is located on one side of the gate insulating layer distant from the active layer; the gate electrode includes an opening a part of the active layer overlapped with the opening includes a first lightly doped region, a first heavily doped region, and a second lightly doped region that are sequentially arranged along a first direction parallel to a plane where the active layer is located.

Abstract: The present disclosure provides a thin film transistor and a method for manufacturing the same, an array substrate, and a display device. The thin film transistor includes: an active layer located on one side of the substrate; a first interlayer dielectric layer located on one side of the active layer away from the substrate; a source penetrating through the first interlayer dielectric layer, and connected to the active layer; a second interlayer dielectric layer located on one side of the first interlayer dielectric layer away from the active layer and covering the source; and a drain, wherein the drain comprises a first portion penetrating through the second interlayer dielectric layer and the first interlayer dielectric layer and connected to the active layer.

Abstract: A CMOS thin film transistor, a method for manufacturing the same, and an array substrate are provided. The method includes: forming a semiconductor layer including an N-type region and a P-type region on a substrate, the N-type region is divided into a first region, a second region, a third region, a fourth region and a fifth region, the P-type region is divided into a sixth region, a seventh region and an eighth region; performing first N-type ion doping on the first region and the fifth region; performing first P-type ion doping on the N-type region; performing second P-type ion doping on the N-type region and the P-type region; performing second N-type ion doping on the first region, the second region, the fourth region, the fifth region, the sixth region and the eighth region; and performing third P-type ion doping on the sixth region and the eighth region.

Abstract: The present disclosure provides a thin film transistor and a method for manufacturing the same, an array substrate, and a display device. The thin film transistor includes: an active layer located on one side of the substrate; a first interlayer dielectric layer located on one side of the active layer away from the substrate; a source penetrating through the first interlayer dielectric layer, and connected to the active layer; a second interlayer dielectric layer located on one side of the first interlayer dielectric layer away from the active layer and covering the source; and a drain, wherein the drain comprises a first portion penetrating through the second interlayer dielectric layer and the first interlayer dielectric layer and connected to the active layer.