Abstract: A 4-channel parallel-optical (SR4) device for monitoring an emission power includes an emission assembly for emitting laser, a receiving assembly for receiving the laser, and a monitoring assembly for monitoring the emission power of the emission assembly. The emission assembly includes an emission chip, a first inclined mirror for total reflecting the laser, and a second inclined mirror for refracting and reflecting the laser. The receiving assembly includes a third inclined mirror or total reflecting and focusing the laser. An inner angle of the first inclined mirror is matched with an inner angle of the second inclined mirror to horizontally transmit the laser towards the optical fiber.

Abstract: A 4-channel parallel-optical (SR4) device for monitoring an emission power includes an emission assembly for emitting laser, a receiving assembly for receiving the laser, and a monitoring assembly for monitoring the emission power of the emission assembly. The emission assembly includes an emission chip, a first inclined mirror for total reflecting the laser, and a second inclined mirror for refracting and reflecting the laser. The receiving assembly includes a third inclined mirror or total reflecting and focusing the laser. An inner angle of the first inclined mirror is matched with an inner angle of the second inclined mirror to horizontally transmit the laser towards the optical fiber.

Abstract: A 4-channel parallel-optical (SR4) device for monitoring an emission power includes an emission assembly, a receiving assembly, and a monitoring assembly. The emission assembly includes an emission chip, a first planar groove, and a second planner groove. The receiving assembly includes a third planar groove and a receiving chip. The emission chip emits the laser to the first planar groove, the first planar groove transmits a part of the laser to the second planar groove, and the second planar groove total reflects the transmitted laser to an optical fiber. The first planar groove reflects a part of the laser to the monitoring assembly. The monitoring assembly receives the reflected laser and monitors power parameters of the reflected laser, the laser is emitted to the third planar groove through the optical fiber, the third planar groove total reflects the laser to the receiving chip, and the receiving chip receives the laser.

Abstract: A method and device for image sensing. The method includes forming a first well and a second well in a substrate, forming a gate oxide layer on the substrate, and depositing a first gate region and a second gate region on the gate oxide layer. The first gate region is associated with the first well, and the second gate region is associated with the second well. Additionally, the method includes forming a third well in the substrate, implanting a first plurality of ions to form a first lightly doped source region and a first lightly doped drain region in the first well, implanting a second plurality of ions to form at least a second lightly doped drain region in the second well, and implanting a third plurality of ions to form a source in the second well.

Abstract: This invention relates to a method for the regioselective synthesis of 4,6,7,8-substituted benzo[g]quinoline-3-carbonitriles and 4,6,7,8-substituted benzo[g]quinazolines as well as intermediates thereof. The compounds derived from this invention are useful for the treatment of a variety of diseases that are a result of deregulation of these PTK's, and more specifically, are anti-cancer agents and are useful for the treatment of cancer in mammals. In addition, the compounds derived from this invention are useful for the treatment of polycystic kidney disease in mammals.

Abstract: A method and device for image sensing. The method includes forming a first well and a second well in a substrate, forming a gate oxide layer on the substrate, and depositing a first gate region and a second gate region on the gate oxide layer. The first gate region is associated with the first well, and the second gate region is associated with the second well. Additionally, the method includes forming a third well in the substrate, implanting a first plurality of ions to form a first lightly doped source region and a first lightly doped drain region in the first well, implanting a second plurality of ions to form at least a second lightly doped drain region in the second well, and implanting a third plurality of ions to form a source in the second well.

Abstract: A method and device for image sensing. The method includes forming a first well and a second well in a substrate, forming a gate oxide layer on the substrate, and depositing a first gate region and a second gate region on the gate oxide layer. The first gate region is associated with the first well, and the second gate region is associated with the second well. Additionally, the method includes forming a third well in the substrate, implanting a first plurality of ions to form a first lightly doped source region and a first lightly doped drain region in the first well, implanting a second plurality of ions to form at least a second lightly doped drain region in the second well, and implanting a third plurality of ions to form a source in the second well.

Abstract: A method and device for image sensing. The method includes forming a first well and a second well in a substrate, forming a gate oxide layer on the substrate, and depositing a first gate region and a second gate region on the gate oxide layer. The first gate region is associated with the first well, and the second gate region is associated with the second well. Additionally, the method includes forming a third well in the substrate, implanting a first plurality of ions to form a first lightly doped source region and a first lightly doped drain region in the first well, implanting a second plurality of ions to form at least a second lightly doped drain region in the second well, and implanting a third plurality of ions to form a source in the second well.