Abstract: Disclosed are a flip-chip light-emitting element and a light-emitting device. The flip-chip light-emitting element includes an epitaxial layer, a contact electrode, an insulating layer and a pad electrode. The epitaxial layer includes a first semiconductor layer, an active layer and a second semiconductor layer, and a contact electrode is formed on the surface of the epitaxial layer. An insulating layer is formed on the epitaxial layer, and covers the surface, the edge area and the sidewall of the epitaxial layer. A pad electrode is formed on the insulating layer and connected to the contact electrode, and the pad electrode at least covers part of the sidewall of the epitaxial layer. When the flip-chip light-emitting element of the present disclosure is solidified through solder paste, it is possible to prevent Sn and Ag from migrating and ascending into the active layer, thereby improving the reliability of the flip-chip light-emitting element.

Abstract: A light-emitting diode and a light-emitting device are provided. In the light-emitting diode, a first mesa including an active layer satisfies a perimeter-to-area ratio 2 ? ? ? s s ? ? ? 2 ? ( ( s L ? 1 ) + L ? 1 ) s under a same light-emitting area. Under the same light-emitting area of the active layer, an exposed portion on a sidewall of the first mesa is less, and thus problems of light absorption and non-radiative recombination caused by a defect of the sidewall of a small-sized light-emitting diode are reduced during working at a low current. In addition, a non-planar light-emitting surface can improve a light-emitting probability of the sidewall of the light-emitting diode, and an external light-emitting efficiency of the light-emitting diode is further improved.

Abstract: A light emitting diode and a light emitting device are provided. The light emitting diode includes: a semiconductor epitaxial stacked layer at least including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer and formed with a first mesa; a first contact electrode located on the first mesa and electrically connected to the first conductive type semiconductor layer; a second contact electrode located on the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer; and a first wiring electrode and a second wiring electrode located on the first contact electrode and the second contact electrode. Horizontal projections of the first wiring electrode and the second wiring electrode on the semiconductor epitaxial stacked layer fall within horizontal projections of the first contact electrode and the second contact electrode.

Abstract: A light-emitting element and a light-emitting device are provided. The light-emitting element includes an epitaxial layer, an insulating layer formed on a surface of the epitaxial layer, and an electrode structure. The electrode structure includes a first electrode connected to a first conductivity type semiconductor layer and a second electrode connected to a second conductivity type semiconductor layer. The electrode structure includes a wiring portion and a connecting portion. The wiring portion is located above the insulating layer. The connecting portion penetrates through the insulating layer from an edge of the wiring portion and extends towards the epitaxial layer. The connecting portion is arranged to extend from the edge of the wiring portion towards the epitaxial layer. Further, a projection of the wiring portion on a front surface of the substrate does not overlap a projection of the connecting portion on the front surface of the substrate.

Abstract: A flip-chip light-emitting device includes a transparent substrate, an epitaxial structure, a transparent dielectric layer, a plurality of first contact electrodes, multiple second contact electrodes, a metallic reflection layer, a first insulating layer, and an electrode pad region. The epitaxial structure is formed on the transparent substrate, and includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first and second contact electrodes are embedded in the transparent dielectric layer, and respectively connected to the first and second type semiconductor layers. The second and first contact electrodes are arranged in an array. The second contact electrodes are disposed in a region perpendicularly below the first pad and are distributed along a circular ring that is concentric with one of the first contact electrodes. A light emitting module includes a circuit board, and the flip-chip light emitting device is mounted on the circuit board.

Abstract: A light-emitting includes an epitaxial structure, a diffusion blocking layer, an ohmic contact layer, a first electrode, and a second electrode. The epitaxial structure includes a first semiconductor layer, an active layer, and a second semiconductor layer disposed sequentially in such order. The diffusion blocking layer is disposed on a surface of the first semiconductor layer opposite to the active layer. The ohmic contact layer is disposed on a surface of the diffusion blocking layer opposite to the first semiconductor layer. The first electrode is disposed on a surface of the ohmic contact layer opposite to the diffusion blocking layer and is electrically connected to the first semiconductor layer. The second electrode is disposed on a surface of the second semiconductor layer adjacent to the active layer and is electrically connected to the second semiconductor layer. A method for manufacturing the light-emitting device is also provided.

Abstract: A light-emitting device includes a semiconductor substrate, an epitaxial structure that has a first surface facing the semiconductor substrate and a second surface opposite to the first surface, and a transparent bonding structure that is disposed between the first surface and the semiconductor substrate. The transparent bonding structure has a first bonding surface facing the first surface of the epitaxial structure and a second bonding surface opposite to the first bonding surface, and has a slit extending from the first bonding surface toward the second bonding surface and terminating at a position that is a distance away from the second bonding surface. A method for manufacturing a light-emitting device is also provided.

Abstract: A light-emitting device includes a semiconductor structure having a first semiconductor layer, an active layer, and a second semiconductor layer. The second semiconductor layer and the active layer formed on a top surface of the first semiconductor layer exposes a portion of the top surface. A first strip electrode is connected to the exposed top surface. A second strip electrode is connected to the second semiconductor layer. When first and second electrodes are projected on a plane, two parallel lines, that contact two opposite ends of the first electrode and perpendicularly intersect a straight line connecting between two opposite ends of the second electrode, define on the straight line a length, which does not extend beyond a distance between the two opposite ends of the second electrode.

Abstract: A turnout includes a fixed beam, and a first and a second movable beams respectively on two opposite sides of the fixed beam. The fixed beam is arranged on a turnout platform. The first movable beam is movably arranged on the turnout platform between a first and a second positions. The second movable beam is movably arranged on the turnout platform between a third and a fourth positions. When the first movable beam is at the first position, the second movable beam is at the third position, the first movable beam is separated from the fixed beam, and the second movable beam and the fixed beam form a first passage; when the first movable beam is at the second position, the second movable beam is at the fourth position, the second movable beam is separated from the fixed beam, and the first movable beam and the fixed beam form a second passage.

Abstract: A turnout includes a fixed beam, and a first and a second movable beams respectively on two opposite sides of the fixed beam. The fixed beam is arranged on a turnout platform. The first movable beam is movably arranged on the turnout platform between a first and a second positions. The second movable beam is movably arranged on the turnout platform between a third and a fourth positions. When the first movable beam is at the first position, the second movable beam is at the third position, the first movable beam is separated from the fixed beam, and the second movable beam and the fixed beam form a first passage; when the first movable beam is at the second position, the second movable beam is at the fourth position, the second movable beam is separated from the fixed beam, and the first movable beam and the fixed beam form a second passage.