Abstract: A near-eye display device is provided, including a display light source, a rotation module and a refractive amplification component. The rotation module rotates around the rotation center axis. The rotation module is provided with a light source scanning component and a mirror group. The light source scanning component converts the light of some pixel points of the display light source into radial propagation, and then the light is emitted through the mirror group and the refractive amplification component. The light source scanning component turns the light of some pixel points of the display light source into radial propagation, so that the optical path becomes radial direction from axial direction, and increases the optical path distance without increasing the volume of the device, which is conducive to reducing the thickness and volume of the device.

Abstract: A near-eye display device is provided, including a display light source, a rotation module and a refractive amplification component. The rotation module rotates around the rotation center axis. The rotation module is provided with a light source scanning component and a mirror group. The light source scanning component converts the light of some pixel points of the display light source into radial propagation, and then the light is emitted through the mirror group and the refractive amplification component. The light source scanning component turns the light of some pixel points of the display light source into radial propagation, so that the optical path becomes radial direction from axial direction, and increases the optical path distance without increasing the volume of the device, which is conducive to reducing the thickness and volume of the device.

Abstract: A reaction chamber and a semiconductor processing device, comprise a Faraday shielding ring (21) made of a magnetic insulation material and an insulating ring (22) made of an insulating material; the Faraday shielding ring (21) is provided with a slot thereon passing through a ring surface thereof in an axial direction; both the Faraday shielding ring (21) and the insulating ring (22) are disposed in the reaction chamber surrounding an inner peripheral wall of the reaction chamber, and the Faraday shielding ring (21) is stacked on the insulating ring (22) in a vertical direction. A shielding ring (211) is disposed surrounding an inner peripheral wall of the insulating ring (22), the shielding ring (211) is connected to an area of a lower surface of the Faraday shielding ring (21) adjacent to a center of the reaction chamber, and the shielding ring (211) is made of a magnetic insulation material and provided with a slot thereon passing through a ring surface thereof in an axis direction.

Abstract: A reaction chamber and a semiconductor processing device, comprise a Faraday shielding ring (21) made of a magnetic insulation material and an insulating ring (22) made of an insulating material; the Faraday shielding ring (21) is provided with a slot thereon passing through a ring surface thereof in an axial direction; both the Faraday shielding ring (21) and the insulating ring (22) are disposed in the reaction chamber surrounding an inner peripheral wall of the reaction chamber, and the Faraday shielding ring (21) is stacked on the insulating ring (22) in a vertical direction. A shielding ring (211) is disposed surrounding an inner peripheral wall of the insulating ring (22), the shielding ring (211) is connected to an area of a lower surface of the Faraday shielding ring (21) adjacent to a center of the reaction chamber, and the shielding ring (211) is made of a magnetic insulation material and provided with a slot thereon passing through a ring surface thereof in an axis direction.