Abstract: A Pickering particle dry powder and a preparation method are used in food processing. The preparation method includes stirring peanut protein isolate and water as raw materials to obtain peanut protein isolate dispersion, subjecting the peanut protein isolate dispersion to ultrasonic treatment, subjecting the resultant to cross-linking reaction with transglutaminase to obtain a monolithic geld, shearing and homogenizing the monolithic gel to obtain a microgel particle dispersion, spray drying the microgel particle dispersion to obtain the Pickering particle dry powder. The Pickering particle dry powder prepared by the ultrasonic-assisted enzyme method is still in nanometer level after rehydration, which is beneficial to preparing Pickering emulsion with strong stability. The preparation method has the advantages of simple operation and low cost, which is beneficial to actual production in the food industry.

Abstract: A semiconductor device is provided that includes a semiconductor substrate; an insulating film that is provided on the semiconductor substrate, has an opening through which the semiconductor substrate is exposed, and contains oxygen; a first barrier metal portion that is provided at least on a bottom portion of the opening and in which one or more kinds of films are laminated; and an upper electrode provided above the insulating film. The barrier metal is not provided between an upper surface of the insulating film and the upper electrode, or the semiconductor device further comprises a second barrier metal portion between the upper surface of the insulating film and the upper electrode, the second barrier metal portion having a configuration different from that of the first barrier metal portion.

Abstract: A semiconductor device is provided that includes a semiconductor substrate; an insulating film that is provided on the semiconductor substrate, has an opening through which the semiconductor substrate is exposed, and contains oxygen; a first barrier metal portion that is provided at least on a bottom portion of the opening and in which one or more kinds of films are laminated; and an upper electrode provided above the insulating film. The barrier metal is not provided between an upper surface of the insulating film and the upper electrode, or the semiconductor device further comprises a second barrier metal portion between the upper surface of the insulating film and the upper electrode, the second barrier metal portion having a configuration different from that of the first barrier metal portion.

Abstract: A semiconductor device is provided that includes a semiconductor substrate; an insulating film that is provided on the semiconductor substrate, has an opening through which the semiconductor substrate is exposed, and contains oxygen; a first barrier metal portion that is provided at least on a bottom portion of the opening and in which one or more kinds of films are laminated; and an upper electrode provided above the insulating film. The barrier metal is not provided between an upper surface of the insulating film and the upper electrode, or the semiconductor device further comprises a second barrier metal portion between the upper surface of the insulating film and the upper electrode, the second barrier metal portion having a configuration different from that of the first barrier metal portion.

Abstract: A semiconductor device is provided that includes a semiconductor substrate; an insulating film that is provided on the semiconductor substrate, has an opening through which the semiconductor substrate is exposed, and contains oxygen; a first barrier metal portion that is provided at least on a bottom portion of the opening and in which one or more kinds of films are laminated; and an upper electrode provided above the insulating film. The barrier metal is not provided between an upper surface of the insulating film and the upper electrode, or the semiconductor device further comprises a second barrier metal portion between the upper surface of the insulating film and the upper electrode, the second barrier metal portion having a configuration different from that of the first barrier metal portion.

Abstract: A reference voltage generation circuit includes a voltage dividing circuit, a transistor, and a capacitor. The voltage dividing circuit divides a power-supply voltage into a specified level to generate a predetermined voltage. The transistor has a gate applied with the predetermined voltage and a drain outputting, as a reference voltage, a voltage obtained by adding the predetermined voltage and a threshold voltage of the transistor. The capacitor bypasses the gate and source of the transistor. Moreover, one end of the capacitor is connected to the gate of the transistor, and the other end of the capacitor is connected to the source of the transistor and ground. Furthermore, an electric charge output source which outputs an electric charge is connected to the drain of the transistor.

Abstract: A control switch is connected to a power supply voltage and turns on based on a control signal to output a current. A clamp circuit is connected to a load and performs clamp control of the output voltage of the control switch. A current control element conducts or shuts off a current based on the output voltage to be clamp-controlled. A selector switch group includes switches, and performs switching based on a voltage varying with the current control by the current control element, thereby switching between paths for generating an internal power supply. The switch circuit connects or disconnects the coupling between the clamp circuit and the selector switch group.

Abstract: A control switch is connected to a power supply voltage and turns on based on a control signal to output a current. A clamp circuit is connected to a load and performs clamp control of the output voltage of the control switch. A current control element conducts or shuts off a current based on the output voltage to be clamp-controlled. A selector switch group includes switches, and performs switching based on a voltage varying with the current control by the current control element, thereby switching between paths for generating an internal power supply. The switch circuit connects or disconnects the coupling between the clamp circuit and the selector switch group.

Abstract: A reference voltage generation circuit includes a voltage dividing circuit, a transistor, and a capacitor. The voltage dividing circuit divides a power-supply voltage into a specified level to generate a predetermined voltage. The transistor has a gate applied with the predetermined voltage and a drain outputting, as a reference voltage, a voltage obtained by adding the predetermined voltage and a threshold voltage of the transistor. The capacitor bypasses the gate and source of the transistor. Moreover, one end of the capacitor is connected to the gate of the transistor, and the other end of the capacitor is connected to the source of the transistor and ground. Furthermore, an electric charge output source which outputs an electric charge is connected to the drain of the transistor.