Abstract: A semiconductor device includes a first contact layer, a second contact layer, an active layer, a photonic crystal layer, a passivation layer, a first electrode and a second electrode. The first contact layer has a first surface and a second surface opposite to each other. Microstructures are located on the second surface. The second contact layer is located below the first surface. The active layer is located between the first contact layer and the second contact layer. The photonic crystal layer is located between the active layer and the second contact layer. The passivation layer is located on the second contact layer. The first electrode is located on the passivation layer and is electrically connected the first surface of the first contact layer. The second electrode is located on the passivation layer and is electrically connected to the second contact layer.

Abstract: A certificate requesting method, a certificate issuing method, a certificate system and a computer-readable medium thereof are provided, in which subscriber identity identification information, a private key and a public key certificate bound to a first security chip are converted into a private key bound to a second security chip via an online identity authentication procedure, and the corresponding public key certificate is issued by a certificate authority server, so as to improve the usability, the convenience and the security thereof.

Abstract: An OPU burnout protection circuit and a optical drive utilizing the same. The OPU burnout protection circuit monitors power status of an OPU driver of the optical drive to prevent burnout of an OPU when an application specific integrated circuit (ASIC) chip or central processing unit (CPU) chip malfunctions.