Abstract: A thin film transistor (TFT) is provided, which includes a substrate, a first gate layer, an insulation layer, a first source/drain layer, a second source/drain layer, a semiconductor layer, a passivation layer and a second gate layer. The first gate layer is disposed on the substrate. The insulation layer is disposed on the first gate layer. The first source/drain layer is disposed on the insulation layer. The second source/drain layer is disposed on the insulation layer. The semiconductor layer is disposed on the insulation layer and covers the first source/drain layer and the second source/drain layer. The passivation layer is disposed on the insulation layer and covers the semiconductor layer. The second gate layer is disposed on the passivation layer and contacts the first gate layer through a via so that the two gate layers keep a same voltage level.

Abstract: A transfer print structure is provided. The transfer print structure comprises a substrate; a color ink layer including a functional region; and an adhesive device combining the functional region with the substrate.

Abstract: A photodiode, a light sensor and a fabricating method thereof are disclosed. An n-type semiconductor layer and an intrinsic semiconductor layer of the photodiode respectively comprise n-type amorphous indium gallium zinc oxide (IGZO) and intrinsic IGZO. The oxygen content of the intrinsic amorphous IGZO is greater than the oxygen content of the n-type amorphous IGZO. A light sensor comprise the photodiode is also disclosed.

Abstract: A manufacturing method for a flexible display apparatus is provided. A rigid substrate is provided. A flexible substrate having a supporting portion and a cutting portion surrounding the supporting portion is provided. A first adhesive material is formed between the rigid substrate and the cutting portion of the flexible substrate, so that the flexible substrate is adhered onto the rigid substrate by the first adhesive material. The first adhesive material does not locate on the supporting portion of the flexible substrate. At least a display unit is formed on the supporting portion of the flexible substrate. The supporting portion and the cutting portion of the flexible substrate are separated so as to separate the rigid substrate and the flexible substrate, wherein the flexible substrate and the display unit thereon form a flexible display apparatus. In the method, the flexible substrate and the rigid substrate can be easily separated.

Abstract: A semiconductor structure includes a gate, an oxide channel layer, a gate insulating layer, a source, a drain and a dielectric stacked layer. The oxide channel layer is stacked over the gate, with the gate insulting layer disposed therebetween. The source and the drain are disposed on a side of the oxide channel layer and in parallel to each other. A portion of the oxide channel layer is exposed between the source and the drain. The dielectric stacked layer is disposed on the substrate and includes plural of first inorganic dielectric layers with a first refraction index and plural of second inorganic dielectric layers with a second refraction index that are stacked alternately. At least one of the first inorganic dielectric layers directly covers the source, the drain and the portion of the oxide channel layer. The first refraction index is smaller than the second refraction index.

Abstract: Disclosed herein is a thin film transistor array substrate. The thin film transistor array substrate includes a display area and a non-display area. The non-display area includes a signal line, a connecting line and a metal contact. The connecting line is formed in a first patterned metal layer. The signal line and the metal contact are formed in a second patterned metal layer. The connecting line is connected to the signal line by a first through-hole, and the connecting line is connected to the metal contact by a second through-hole. Furthermore, a method of fabricating the thin film transistor array substrate is also disclosed.

Abstract: A color filter suitable for being disposed on a substrate is provided. The color filter includes a plurality of pixel units separately disposed on the substrate so as to define a plurality of blank regions thereon. A color display apparatus applying the color filter is also provided, wherein the color display apparatus includes a driving circuit substrate, the color filter and a display medium layer. The color filter is disposed on the driving circuit substrate. The display medium layer is disposed between the driving circuit substrate and the color filter.

Abstract: A court border module using a display apparatus is disclosed, which uses piezoelectric elements to drive the display apparatus. When a ball hits a court border, which is defined by the display apparatus, a force is applied to the piezoelectric elements which then generate power to drive the corresponding part of the display apparatus. The color of the part of the display apparatus hit by the ball is switched. Therefore the change in the color of the court border can be observed by officials and others to instantly and objectively determine whether the ball has hit the court border.

Abstract: A color electronic paper apparatus includes a display layer, a color resist layer, an anti-ultraviolet layer and a protective sheet. The color resist layer is disposed on the display layer. The anti-ultraviolet layer is disposed on the color resist layer. The protective sheet is disposed on the anti-ultraviolet layer. A manufacturing method of the color electronic paper apparatus and a color electronic paper display are provided herein.

Abstract: A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-type transparent oxide semiconductor comprising a first portion and a second portion so that the patterned N-type transparent oxide semiconductor and the first portion and the second portion of the patterned p-type organic polymer semiconductor form heterojunctions therebetween respectively, wherein the first portion of the patterned p-type organic polymer semiconductor is used as an emitter, and the second portion of the patterned p-type organic polymer semiconductor is used as a collector.

Abstract: A method for manufacturing a color electrophoretic display device includes the following steps. First, a substrate having a displaying region and a circuit region around the displaying region is provided. Next, a driving array is formed in the displaying region. Subsequently, an electrophoretic display layer is formed on the driving array. Afterwards, a thermal transfer process is performed so that a color filter layer is formed on the electrophoretic display layer. The method can increase the production eligibility rate of the color electrophoretic display device, thereby improving the display quality of the color electrophoretic display device.

Abstract: A display panel is provided. The display panel comprises a first substrate, a second substrate, a display control circuit and a force sensing circuit. The display control circuit is disposed on the first substrate between the first substrate and the second substrate for controlling the display panel to display an image through the second substrate. The force sensing circuit is disposed side by side with the display control circuit on the first substrate between the first substrate and second substrate, wherein the force sensing circuit comprises a plurality of force sensing elements for sensing at least one external force and correspondingly generate a plurality of force signals respectively to transform at least one touch signal corresponding to the at least one external force.

Abstract: A color electronic paper device and manufacturing method thereof are provided. The device includes: a front panel; a color filter layer, placed over the front panel; a color protection layer, being a thermoplastic transparent layer placed over the color filter layer; an adhesive layer, placed over the color protection layer; and a cover, placed over the adhesive layer.

Abstract: A method for manufacturing oxide thin film transistors includes steps of: forming a gate, a drain electrode, a source electrode, and an oxide semiconductor layer respectively. The oxide semiconductor layer is formed on the gate electrode; the drain electrode and the source electrode are formed at two opposite sides of the oxide semiconductor layer. The method further includes a step of depositing a dielectric layer of silicon oxide, and a reacting gas for depositing the silicon oxide includes silane and nitrous oxide. A flow rate of nitrous oxide is in a range from 10 to 200 standard cubic centimeters per minute (SCCM). Oxide thin film transistors manufactured by above method has advantages of low leakage, high mobility, and other integrated circuit member can be directly formed on the thin film transistor array substrate of a display device.

Abstract: A method for manufacturing a color display provides a bottom substrate, injects a liquid display media onto the bottom substrate, and disposes a sealing substrate on the liquid display media, such that the liquid display media is contained between the sealing substrate and the bottom substrate. The method also aligns an image device corresponding to the bottom substrate and transfers a color coating onto the sealing substrate by a laser device through a laser thermal transfer process to form a color filter layer on the sealing substrate.

Abstract: Disclosed herein is a method for manufacturing an active array substrate. The method includes the steps of: forming a first patterned metal layer on a substrate; sequentially forming a semiconductor layer, an insulating layer and a second metal layer to cover the first patterned metal layer; forming a patterned photoresist layer on the second metal layer; patterning the second metal layer, the insulating layer and the semiconductor layer to form a second patterned metal layer, a patterned insulating layer and a patterned semiconductor layer, and removing a portion of the patterned photoresist layer; heating the remained portion of the patterned photoresist layer such that the remained portion is fluidized and transformed into a protective layer; and forming a pixel electrode.

Abstract: A display apparatus includes a driving substrate and an organic light emitting diode device. The driving substrate includes a display area, a non-display area, a substrate and a transparent driving element. The transparent driving element is disposed in the non-display area to form a transparent region. The organic light emitting diode device is disposed over the driving substrate and located in the display area to form a non-transparent region.

Abstract: A thin film transistor (TFT) is provided, which includes a substrate, a first gate layer, an insulation layer, a first source/drain layer, a second source/drain layer, a semiconductor layer, a passivation layer and a second gate layer. The first gate layer is disposed on the substrate. The insulation layer is disposed on the first gate layer. The first source/drain layer is disposed on the insulation layer. The second source/drain layer is disposed on the insulation layer. The semiconductor layer is disposed on the insulation layer and covers the first source/drain layer and the second source/drain layer. The passivation layer is disposed on the insulation layer and covers the semiconductor layer. The second gate layer is disposed on the passivation layer and contacts the first gate layer through a via so that the two gate layers keep a same voltage level.

Abstract: A method for manufacturing an active array substrate is provided herein. The active array substrate can be manufactured by using only two photolithography process steps. The photolithography process step using a first photomask may be provided for forming a drain electrode, a source electrode, a data line and/or a data line connecting pad and a patterned transparent conductive layer, etc. The photolithography process step using a second photomask may be utilized for forming a gate electrode, a gate line, a gate insulating layer, a channel layer and/or a gate line connecting pad, and so forth.

Abstract: A semiconductor structure includes a gate, an oxide channel layer, a gate insulating layer, a source, a drain and a dielectric stacked layer. The oxide channel layer is stacked over the gate, with the gate insulting layer disposed therebetween. The source and the drain are disposed on a side of the oxide channel layer and in parallel to each other. A portion of the oxide channel layer is exposed between the source and the drain. The dielectric stacked layer is disposed on the substrate and includes plural of first inorganic dielectric layers with a first refraction index and plural of second inorganic dielectric layers with a second refraction index that are stacked alternately. At least one of the first inorganic dielectric layers directly covers the source, the drain and the portion of the oxide channel layer. The first refraction index is smaller than the second refraction index.