Patents by Inventor Yao-chun Shen

Yao-chun Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100108888
    Abstract: A method of investigating an object, comprising the steps of: (a) irradiating the object with an optically-generated pulse of electromagnetic radiation, said pulse having a plurality of frequencies in the range from 100 GHz to 100 THz; (b) detecting radiation transmitted and/or reflected from the object to obtain a time domain waveform; (c) repeating steps (a) and (b) for a plurality of points on the object and (d) combining data from step (c) to produce a time domain waveform for the object which has been averaged over the plurality of points.
    Type: Application
    Filed: November 5, 2009
    Publication date: May 6, 2010
    Inventors: Philip F. Taday, Yao-Chun Shen
  • Patent number: 7675036
    Abstract: A method of investigating an object, comprising the steps of: (a) irradiating the object with an optically-generated pulse of electromagnetic radiation, said pulse having a plurality of frequencies in the range from 100 GHz to 100 THz; (b) detecting radiation transmitted and/or reflected from the object to obtain a time domain waveform; (c) repeating steps (a) and (b) for a plurality of points on the object and (d) combining data from step (c) to produce a time domain waveform for the object which has been averaged over the plurality of points.
    Type: Grant
    Filed: August 26, 2005
    Date of Patent: March 9, 2010
    Assignee: Teraview Limited
    Inventors: Philip F. Taday, Yao-Chun Shen
  • Patent number: 7498593
    Abstract: The invention relates to improved terahertz radiation sources and associated methods. A terahertz radiation source is described, comprising: an emitter (202) comprising a semiconductor material (12); a pair of electrodes (204a,b) adjacent a face of said semiconductor, said pair of electrodes defining a gap between said electrodes; a pulsed light source input for illuminating said semiconductor to excite photo-carriers in said semiconductor to generate terahertz radiation; and a radiation collector (212) to collect said terahertz radiation; and wherein said radiation collector is disposed on the same side of said semiconductor as said electrodes. A related method of providing terahertz radiation is also described.
    Type: Grant
    Filed: March 24, 2004
    Date of Patent: March 3, 2009
    Assignee: Cambridge University Technical Services Limited
    Inventors: Yao-chun Shen, Edmund H. Linfield, Alexander G. Davies
  • Publication number: 20080006767
    Abstract: A method of investigating an object, comprising the steps of: (a) irradiating the object with an optically-generated pulse of electromagnetic radiation, said pulse having a plurality of frequencies in the range from 100 GHz to 100 THz; (b) detecting radiation transmitted and/or reflected from the object to obtain a time domain waveform; (c) repeating steps (a) and (b) for a plurality of points on the object and (d) combining data from step (c) to produce a time domain waveform for the object which has been averaged over the plurality of points.
    Type: Application
    Filed: August 26, 2005
    Publication date: January 10, 2008
    Inventors: Philip Taday, Yao-Chun Shen
  • Publication number: 20070034813
    Abstract: The invention relates to improved terahertz radiation sources and associated methods. A terahertz radiation source is described, comprising: an emitter (202) comprising a semiconductor material (12); a pair of electrodes (204a,b) adjacent a face of said semiconductor, said pair of electrodes defining a gap between said electrodes; a pulsed light source input for illuminating said semiconductor to excite photo-carriers in said semiconductor to generate terahertz radiation; and a radiation collector (212) to collect said terahertz radiation; and wherein said radiation collector is disposed on the same side of said semiconductor as said electrodes. A related method of providing terahertz radiation is also described.
    Type: Application
    Filed: March 24, 2004
    Publication date: February 15, 2007
    Inventors: Yao-chun Shen, Edmund Linfield, Alexander Davies