Abstract: An electrochemical machining apparatus for forming turbine blades includes a main base, an upper seat and an electrode unit. The main base includes a working platform for allowing a turbine blade to be placed thereon. The working platform includes an upper step stage for resisting the turbine blade, and a lower step stage for keeping a predetermined working space from a portion of the turbine blade desired to be cut. The main base has a guiding channel for allowing an electrolyte to flow through the predetermined working space. The upper seat is configured to cover above the main base and to contact one side of the turbine blade to form an electrical connection. The electrode unit includes an anode electrode electrically connected to the upper seat and at least one cathode electrode disposed on the main base.

Abstract: An electrochemical machining apparatus for forming turbine blades includes a main base, an upper seat and an electrode unit. The main base includes a working platform for allowing a turbine blade to be placed thereon. The working platform includes an upper step stage for resisting the turbine blade, and a lower step stage for keeping a predetermined working space from a portion of the turbine blade desired to be cut. The main base has a guiding channel for allowing an electrolyte to flow through the predetermined working space. The upper seat is configured to cover above the main base and to contact one side of the turbine blade to form an electrical connection. The electrode unit includes an anode electrode electrically connected to the upper seat and at least one cathode electrode disposed on the main base.

Abstract: An electrochemical machining apparatus with a clamping device and an electrode aligned in the same direction includes a platen, a lower seat, an anode electrode and a cathode electrode. The platen and the lower seat are located relatively for clamping. A working space is formed between the platen and the lower seat for allowing a workpiece to be placed therein. The anode electrode is disposed on the platen and is electrically connected to the workpiece. The cathode electrode is disposed inside the lower seat and is corresponding to the working space. An isolation layer is disposed between the cathode electrode and the lower seat to avoid an electrical connection. A working gap with a constant distance is preserved between the cathode electrode and the workpiece for allowing an electrolyte to flow therethrough and performing electrochemical machining.

Abstract: A method to produce high electron mobility transistors with Boron implanted isolation comprises the following steps: on a substrate forming in sequence a nucleation layer, a buffer layer, a barrier layer and a cap layer; coating a photoresist layer on the cap layer; photomasking and by exposure eliminating the photoresist layer of at least one isolation region; executing plural times an ion implantation process including: adjusting an incident angle of a Boron ion beam with respect to the substrate, and implanting the Boron ion beam into the cap layer, the barrier layer, the buffer layer, the nucleation layer and the substrate within the at least one isolation region so as to form an isolation structure while rotating the substrate by a rotation angle; eliminating the rest of the photoresist layer by exposure; and forming a source, a drain and a gate on the cap layer.

Abstract: A wafer holding structure for wafer backside processing, in which the wafer comprises a SiC substrate and a semiconductor device layer. The SiC substrate has a back surface and a front surface, and the semiconductor device layer has a first surface and a second surface. The semiconductor device layer is disposed on the SiC substrate with its first surface in contact with the front surface of the SiC substrate. The wafer holding structure comprises a wafer carrier and an adhesive coating. The wafer carrier is made of n-type conductive SiC, and has a thermal expansion coefficient that is well matched to the SiC substrate. The wafer carrier is mounted to the second surface of the semiconductor device layer and the adhesive coating is coated between the wafer carrier and the second surface of the semiconductor device layer.

Abstract: A wafer edge protector is used in an inductively coupled plasma reactive ion etching instrument for the manufacturing of GaN semiconductor devices and circuits. The wafer edge protector comprises a ring clamp, which has a first inner diameter and a second inner diameter, and the ring clamp covers the edges of a wafer and a wafer carrier to clamp the wafer and the wafer carrier and to prevent damage on the edges of the wafer and the wafer carrier during the etching process.