Abstract: A Static Random Access Memory (SRAM) cell includes a write port including a first inverter including a first pull-up transistor and a first pull-down transistor, and a second inverter including a second pull-up transistor and a second pull-down transistor and cross-coupled with the first inverter; and a read port including a read pass-gate transistor and a read pull-down transistor serially connected to each. A first doped concentration of impurities doped in channel regions of the second pull-down transistor and the read pull-down transistor is greater than a second doped concentration of the impurities doped in a channel region of the first pull-down transistor, or the impurities are doped in the channel regions of the second pull-down transistor and the read pull-down transistor and are not doped in the channel region of the first pull-down transistor.

Abstract: A Static Random Access Memory (SRAM) cell includes a write port including a first inverter including a first pull-up transistor and a first pull-down transistor, and a second inverter including a second pull-up transistor and a second pull-down transistor and cross-coupled with the first inverter; and a read port including a read pass-gate transistor and a read pull-down transistor serially connected to each. A first doped concentration of impurities doped in channel regions of the second pull-down transistor and the read pull-down transistor is greater than a second doped concentration of the impurities doped in a channel region of the first pull-down transistor, or the impurities are doped in the channel regions of the second pull-down transistor and the read pull-down transistor and are not doped in the channel region of the first pull-down transistor.

Abstract: A Static Random Access Memory (SRAM) cell includes a write port including a first inverter including a first pull-up transistor and a first pull-down transistor, and a second inverter including a second pull-up transistor and a second pull-down transistor and cross-coupled with the first inverter; and a read port including a read pass-gate transistor and a read pull-down transistor serially connected to each. A first doped concentration of impurities doped in channel regions of the second pull-down transistor and the read pull-down transistor is greater than a second doped concentration of the impurities doped in a channel region of the first pull-down transistor, or the impurities are doped in the channel regions of the second pull-down transistor and the read pull-down transistor and are not doped in the channel region of the first pull-down transistor.

Abstract: A Static Random Access Memory (SRAM) cell includes a write port including a first inverter including a first pull-up transistor and a first pull-down transistor, and a second inverter including a second pull-up transistor and a second pull-down transistor and cross-coupled with the first inverter; and a read port including a read pass-gate transistor and a read pull-down transistor serially connected to each. A first doped concentration of impurities doped in channel regions of the second pull-down transistor and the read pull-down transistor is greater than a second doped concentration of the impurities doped in a channel region of the first pull-down transistor, or the impurities are doped in the channel regions of the second pull-down transistor and the read pull-down transistor and are not doped in the channel region of the first pull-down transistor.

Abstract: An integrated electronic apparatus for data access, data transmission, and power management and method thereof are provided. The integrated electronic apparatus employs a first controller, a second controller, and a switch unit for controlling the data access, data transmission, and power management between a first peripheral device and a second peripheral device, so that a first communication interface and a second communication interface of the integrated electronic apparatus are integrated effectively to increase convenience of the data access and utilization flexibility of the integrated electronic apparatus. The integrated electronic apparatus serves as functions of a portable storage device, a data transmission line, and a portable power bank.

Abstract: A Static Random Access Memory (SRAM) cell includes a write port including a first inverter including a first pull-up transistor and a first pull-down transistor, and a second inverter including a second pull-up transistor and a second pull-down transistor and cross-coupled with the first inverter; and a read port including a read pass-gate transistor and a read pull-down transistor serially connected to each. A first doped concentration of impurities doped in channel regions of the second pull-down transistor and the read pull-down transistor is greater than a second doped concentration of the impurities doped in a channel region of the first pull-down transistor, or the impurities are doped in the channel regions of the second pull-down transistor and the read pull-down transistor and are not doped in the channel region of the first pull-down transistor.

Abstract: A Static Random Access Memory (SRAM) cell includes a write port including a first inverter including a first pull-up transistor and a first pull-down transistor, and a second inverter including a second pull-up transistor and a second pull-down transistor and cross-coupled with the first inverter; and a read port including a read pass-gate transistor and a read pull-down transistor serially connected to each. A first doped concentration of impurities doped in channel regions of the second pull-down transistor and the read pull-down transistor is greater than a second doped concentration of the impurities doped in a channel region of the first pull-down transistor, or the impurities are doped in the channel regions of the second pull-down transistor and the read pull-down transistor and are not doped in the channel region of the first pull-down transistor.

Abstract: A Static Random Access Memory (SRAM) cell includes a write port including a first inverter including a first pull-up transistor and a first pull-down transistor, and a second inverter including a second pull-up transistor and a second pull-down transistor and cross-coupled with the first inverter; and a read port including a read pass-gate transistor and a read pull-down transistor serially connected to each. A first doped concentration of impurities doped in channel regions of the second pull-down transistor and the read pull-down transistor is greater than a second doped concentration of the impurities doped in a channel region of the first pull-down transistor, or the impurities are doped in the channel regions of the second pull-down transistor and the read pull-down transistor and are not doped in the channel region of the first pull-down transistor.

Abstract: A program updating system having correction storage units and methods thereof are described. The control unit checks the first setting section of the first storage unit to determine whether the first setting data associated with the second storage unit is stored in the first setting section. When the first setting data is stored in the first setting section, the control unit reads the first setting data and writes the first setting data to the second storage unit. The first setting data includes a first correcting address and a first correcting code corresponding to the first correcting address. The second storage unit stores a first setting data transmitted from the first setting section. The control unit compares an executed address of the original program with the first correcting address. When the executed address is identical to the first correcting address, the control unit replaces a first error code corresponding to the executed address with the first correcting code.

Abstract: A branch prediction method, capable of predicting a first taken branch instruction within a plurality of fetched instructions, includes: determining whether one of the fetched instructions is the first taken branch instruction to be predicted according to hint instruction(s) or according to latest statistics of whether respective fetched instructions have been taken. The branch prediction method further includes: if one of the fetched instructions is determined to be the first taken branch instruction, performing branch prediction on the first taken branch instruction.

Abstract: A method for producing fibers from molten waste includes melting waste in a melter into high-temperature molten fluid, discharging the high-temperature molten fluid from the melter, and fiberizing the high-temperature molten fluid to form solid fibers. The solid fibers possess excellent fire-resistant properties and thus can be used as fire-resistant materials.

Abstract: A fiberizing device includes a housing, a receiving seat mounted on the housing, and a drawing device. The receiving seat includes a receiving groove having a discharge port. The receiving groove receives molten fluid formed by heating waste. A heating device is provided for heating the molten fluid in the receiving seat. The drawing device draws the molten fluid from the discharge port to form a solid fiber after the molten fluid comes in contact with cool air. The solid fiber possesses excellent fire-resistant properties and thus can be used as fire-resistant materials.

Abstract: A branch prediction method, capable of predicting a first taken branch instruction within a plurality of fetched instructions, includes: determining whether one of the fetched instructions is the first taken branch instruction to be predicted according to hint instruction(s) or according to latest statistics of whether respective fetched instructions have been taken. The branch prediction method further includes: if one of the fetched instructions is determined to be the first taken branch instruction, performing branch prediction on the first taken branch instruction.

Abstract: A method for producing fibers from waste includes heating waste into molten fluid having a temperature allowing rolling, rolling the molten fluid, and drawing the molten fluid after rolling by a centrifugal force and cooling the molten fluid to form solid fibers. The molten fluid is rolled to destroying tension and spreads out to increase free surface area. The molten fluid after rolling is drawn in a centrifugal direction and cooled with air cooling to form solid fibers.

Abstract: A fiberizing device for producing fibers from waste includes a housing having an inlet for receiving molten fluid. Two rollers are rotatably mounted in the housing and include a space therebetween through which the molten fluid passes. Each roller is in contact with at least one centrifugal wheel. The molten fluid is driven through the space and rolled in the space by the rollers. The rolled molten fluid is drawn by the centrifugal wheel when the rolled molten fluid comes in contact with the centrifugal wheel, with the rolled molten fluid drawn by the centrifugal wheel being cooled to form solid fibers.

Abstract: A fiberizing device includes a housing, a receiving seat mounted on the housing, and a drawing device. The receiving seat includes a receiving groove having a discharge port. The receiving groove receives molten fluid formed by heating waste. A heating device is provided for heating the molten fluid in the receiving seat. The drawing device draws the molten fluid from the discharge port to form a solid fiber after the molten fluid comes in contact with cool air. The solid fiber possesses excellent fire-resistant properties and thus can be used as fire-resistant materials.

Abstract: A method for producing fibers from molten waste includes melting waste in a melter into high-temperature molten fluid, discharging the high-temperature molten fluid from the melter, and fiberizing the high-temperature molten fluid to form solid fibers. The solid fibers possess excellent fire-resistant properties and thus can be used as fire-resistant materials.

Abstract: A method is provided for determining whether the state of a telecommunications switch (110) is adequate for a software upgrade or retrofit. A report stream of text messages relating to the state of, and events occurring on, the telecommunications switch is stored (200) by a server (102). Predetermined messages are detected in the report stream, including messages indicating hardware errors, alarms and other errors (202). The predetermined messages have a numerical value associated therewith (204). The numerical value reflects a probability of failure of a retrofit if the message is detected. As the predetermined messages are detected, their numerical values are accumulated into an accumulated value (206). The time period the report stream covers is determined and compared against an expected time (216). If the time period covered by the report stream does not exceed an expected time, then a determination regarding suitability for upgrade may not be reliable (222).