Abstract: The method for forming the semiconductor structure includes the following steps. A substrate that is divided into a cell region and a peripheral region is provided. A bottom dielectric layer is formed on the substrate. A first stacked structure and a second stacked structure are formed on the bottom dielectric layer. The first stacked structure is disposed in the cell region and the second stacked structure is disposed in the peripheral region. The first stacked structure is patterned to form first conductive stacks. A first cleaning process is performed. A first repair dielectric layer is formed on the first conductive stacks, the second stacked structure, and the bottom dielectric layer. The second stacked structure is patterned to form second conductive stacks. A second cleaning process is performed. A second repair dielectric layer is formed on the first conductive stacks, the second conductive stacks, and the bottom dielectric layer.

Abstract: A minimum IC operating voltage searching method includes acquiring a corner type of an IC, acquiring ring oscillator data of the IC, generating a first prediction voltage according to the corner type and the ring oscillator data by using a training model, generating a second prediction voltage according to the ring oscillator data by using a non-linear regression approach under an N-ordered polynomial, and generating a predicted minimum IC operating voltage according to the first prediction voltage and the second prediction voltage. N is a positive integer.

Abstract: The present disclosure provides a driving mechanism, which includes a driving shaft, a sleeve, a plurality of guiding members, an impact bulk and an output shaft. The sleeve is sleeved on the driving shaft and has a plurality of guiding grooves for accommodating the guiding members. The impact bulk is sleeved on the outside of the sleeve. Some guiding members are linearly immovable relative to the driving shaft; other guiding members are linearly immovable relative to the impact bulk. With the design of the guiding grooves, the torque input into the driving shaft is transferred into an impact torque applied on the output shaft.

Abstract: The present disclosure provides a driving mechanism, which includes a driving shaft, a sleeve, a plurality of guiding members, an impact bulk and an output shaft. The sleeve is sleeved on the driving shaft and has a plurality of guiding grooves for accommodating the guiding members. The impact bulk is sleeved on the outside of the sleeve. Some guiding members are linearly immovable relative to the driving shaft; other guiding members are linearly immovable relative to the impact bulk. With the design of the guiding grooves, the torque input into the driving shaft is transferred into an impact torque applied on the output shaft.

Abstract: The present disclosure provides a driving mechanism, which includes a driving shaft, a sleeve, a plurality of guiding members, an impact bulk and an output shaft. The sleeve is sleeved on the driving shaft and has a plurality of guiding grooves for accommodating the guiding members. The impact bulk is sleeved on the outside of the sleeve. Some guiding members are linearly immovable relative to the driving shaft; other guiding members are linearly immovable relative to the impact bulk. By means of the design of the guiding grooves, the torque input into the driving shaft is transferred into an impact torque applied on the output shaft.