Patents by Inventor Yao-Hsien Tsai

Yao-Hsien Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11967613
    Abstract: A semiconductor structure includes a substrate, and an active device and a passive device over the substrate. The active device is disposed in a first region of the substrate, and the passive device is disposed in a second region of the substrate. The semiconductor structure further includes a shielding structure and a passivation layer. The shielding structure includes a barrier layer and a ceiling layer. The barrier layer is on the passive device and the active device, and the ceiling layer is on the barrier layer. The passivation layer is under the barrier layer and covers a top surface of the passive device. An air cavity is defined by sidewalls of the barrier layer, a bottom surface of the ceiling layer, and the substrate.
    Type: Grant
    Filed: May 16, 2023
    Date of Patent: April 23, 2024
    Assignee: WIN SEMICONDUCTORS CORP.
    Inventors: Ju-Hsien Lin, Jung-Tao Chung, Shu-Hsiao Tsai, Hsi-Tsung Lin, Chen-An Hsieh, Yi-Han Chen, Yao-Ting Shao
  • Publication number: 20220246509
    Abstract: A package structure and a method for forming the same are provided. The package structure includes a die, a first molding surrounding the die, a first redistribution layer (RDL), an interposer disposed over the first RDL, a second molding surrounding the interposer, a first via, and a second RDL. The first RDL includes a first dielectric layer disposed over the die and the first molding, and a first interconnect structure surrounded by the first dielectric layer and electrically connected to the die. The interposer is electrically connected to the die through the first interconnect structure. The first via extends through and within the second molding and is adjacent to the interposer. The second RDL includes a second dielectric layer disposed over the interposer and the second molding, and a second interconnect structure surrounded by the second dielectric layer and electrically connected to the via and the interposer.
    Type: Application
    Filed: April 25, 2022
    Publication date: August 4, 2022
    Inventors: CHIN-HER CHIEN, PO-HSIANG HUANG, CHENG-HUNG YEH, TAI-YU WANG, MING-KE TSAI, YAO-HSIEN TSAI, KAI-YUN LIN, CHIN-YUAN HUANG, KAI-MING LIU, FONG-YUAN CHANG, CHIN-CHOU LIU, YI-KAN CHENG
  • Patent number: 11387177
    Abstract: A package structure and a method for forming the same are provided. The package structure includes a die, a first molding surrounding the die, a first redistribution layer (RDL), an interposer disposed over the first RDL, a second molding surrounding the interposer, a first via, and a second RDL. The first RDL includes a first dielectric layer disposed over the die and the first molding, and a first interconnect structure surrounded by the first dielectric layer and electrically connected to the die. The interposer is electrically connected to the die through the first interconnect structure. The first via extends through and within the second molding and is adjacent to the interposer. The second RDL includes a second dielectric layer disposed over the interposer and the second molding, and a second interconnect structure surrounded by the second dielectric layer and electrically connected to the via and the interposer.
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: July 12, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chin-Her Chien, Po-Hsiang Huang, Cheng-Hung Yeh, Tai-Yu Wang, Ming-Ke Tsai, Yao-Hsien Tsai, Kai-Yun Lin, Chin-Yuan Huang, Kai-Ming Liu, Fong-Yuan Chang, Chin-Chou Liu, Yi-Kan Cheng
  • Publication number: 20200395281
    Abstract: A package structure and a method for forming the same are provided. The package structure includes a die, a first molding surrounding the die, a first redistribution layer (RDL), an interposer disposed over the first RDL, a second molding surrounding the interposer, a first via, and a second RDL. The first RDL includes a first dielectric layer disposed over the die and the first molding, and a first interconnect structure surrounded by the first dielectric layer and electrically connected to the die. The interposer is electrically connected to the die through the first interconnect structure. The first via extends through and within the second molding and is adjacent to the interposer. The second RDL includes a second dielectric layer disposed over the interposer and the second molding, and a second interconnect structure surrounded by the second dielectric layer and electrically connected to the via and the interposer.
    Type: Application
    Filed: June 17, 2019
    Publication date: December 17, 2020
    Inventors: CHIN-HER CHIEN, PO-HSIANG HUANG, CHENG-HUNG YEH, TAI-YU WANG, MING-KE TSAI, YAO-HSIEN TSAI, KAI-YUN LIN, CHIN-YUAN HUANG, KAI-MING LIU, FONG-YUAN CHANG, CHIN-CHOU LIU, YI-KAN CHENG
  • Patent number: 9330215
    Abstract: A method for verifying the design of an IC having a plurality of tiers includes conducting a layout versus schematic (“LVS”) check to separate a plurality of devices of a plurality of design layouts, wherein each design layout corresponds to a respectively different tier having the respective devices. A plurality of adjacent tier connections are generated between one of the devices in respectively different tiers from each other, using a computing device. A first RC extraction for each of the tiers is performed to compute couplings between each of the plurality of devices of the corresponding design layout. A second RC extraction for each of the adjacent tier connections is performed.
    Type: Grant
    Filed: March 19, 2014
    Date of Patent: May 3, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yao-Hsien Tsai, Chi-Ting Huang, Cheng-Hung Yeh, Hsien-Hsin Sean Lee
  • Publication number: 20150269303
    Abstract: A method for verifying the design of an IC having a plurality of tiers includes conducting a layout versus schematic (“LVS”) check to separate a plurality of devices of a plurality of design layouts, wherein each design layout corresponds to a respectively different tier having the respective devices. A plurality of adjacent tier connections are generated between one of the devices in respectively different tiers from each other, using a computing device. A first RC extraction for each of the tiers is performed to compute couplings between each of the plurality of devices of the corresponding design layout. A second RC extraction for each of the adjacent tier connections is performed.
    Type: Application
    Filed: March 19, 2014
    Publication date: September 24, 2015
    Applicant: Taiwan Semiconcuctor Manufacturing Co., Ltd.
    Inventors: Yao-Hsien TSAI, Chi-Ting HUANG, Cheng-Hung YEH, Hsien-Hsin Sean LEE
  • Patent number: 7000983
    Abstract: A folding lounge chair has a seat frame, including a front leg and a rear leg crossing each other and hinged to the seat frame. At the crossing of the front leg and the rear leg, a hinge plate having a guide groove is fixed to the rear leg. At two ends of the guide groove are, respectively, upper and lower arrest units. The lower arrest unit is curved upwards. At one end of the lower arrest unit is provided a projected retaining part. One end of a bolt is fixed onto the rear leg, the other end running through the guide groove of the hinge plate, permitting the bolt to glide up and down along the guide groove. Besides allowing the lounge chair to retain a simplified construction, when the legs are unfolded, the bolt will not glide into the lower arrest unit and will be arrested by the projected retaining part. Therefore, the legs will not easily fold up.
    Type: Grant
    Filed: April 27, 2005
    Date of Patent: February 21, 2006
    Inventor: Yao-Hsien Tsai
  • Patent number: D555378
    Type: Grant
    Filed: April 27, 2005
    Date of Patent: November 20, 2007
    Inventor: Yao-Hsien Tsai