Abstract: The present disclosure provides a semiconductor structure and a method of manufacturing the semiconductor structure. The semiconductor structure includes a first bit line on a substrate; a contact adjacent to the first bit line on the substrate, wherein a first distance between a top portion of the contact and the first bit line is less than a second distance between a lower portion of the contact and the first bit line; a dielectric layer, disposed conformally over the first bit line, the substrate, and the contact; and a first air gap, sealed by the dielectric layer and defined by the first bit line, the substrate and the contact.

Abstract: The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a bit line on a substrate, forming a first dielectric layer over the substrate and surrounding a lower portion of the bit line, forming a second dielectric layer over the bit line and the first dielectric layer, forming a contact over the second dielectric layer, wherein a height of the contact above the substrate is greater than a height of the first dielectric layer above the substrate, removing the first dielectric layer and the second dielectric layer, and forming a third dielectric layer conformally over the bit line, the substrate and the contact, thereby forming an air gap between the contact and the bit line.

Abstract: A manufacturing method of a semiconductor structure includes: forming a semiconductor layer between bit lines; patterning the semiconductor layer to form a plurality of cell contacts and trenches, wherein two of the cell contacts are separated by one of the trenches; and forming an isolation layer in the trenches. The semiconductor layer is formed between the bit lines such that no sacrificial layer is formed between the bit lines. A process of forming the sacrificial layer may be omitted.

Abstract: The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a bit line on a substrate, forming a first dielectric layer over the substrate and surrounding a lower portion of the bit line, forming a second dielectric layer over the bit line and the first dielectric layer, forming a contact over the second dielectric layer, wherein a height of the contact above the substrate is greater than a height of the first dielectric layer above the substrate, removing the first dielectric layer and the second dielectric layer, and forming a third dielectric layer conformally over the bit line, the substrate and the contact, thereby forming an air gap between the contact and the bit line.

Abstract: The present disclosure provides a semiconductor structure and a method of manufacturing the semiconductor structure. The semiconductor structure includes a first bit line on a substrate; a contact adjacent to the first bit line on the substrate, wherein a first distance between a top portion of the contact and the first bit line is less than a second distance between a lower portion of the contact and the first bit line; a dielectric layer, disposed conformally over the first bit line, the substrate, and the contact; and a first air gap, sealed by the dielectric layer and defined by the first bit line, the substrate and the contact.

Abstract: A wafer cleaning apparatus with multiple wash-heads is applied in chemical and mechanical polishing process after wafer cleaning. The wafer cleaning apparatus device includes a supporting base, which supporting base comprises a driving device and at least one fluid pipe. A rotation module is also included in the wafer cleaning apparatus. The top side of the rotation module is connected with the driving device. Besides, the rotation module comprises multiple wash-heads and at least one nozzle. The bottom side of wash-head here is contacted with the surface of the wafer. By using driving device, the rotation module can be wholly driven. Also, multiple wash-heads can rotate individually along a cleaning path for cleaning wafer. The fluid was jetted from nozzle and assistant to clean wafer through fluid pipe. The prior art of single wafer wash-head is easily to reform a cleaning dead angle in wafer cleaning process.

Abstract: The present invention provides an apparatus for detecting flaws in a wafer. The apparatus has a detection platform for holding a wafer positioned thereon, a cross-bar ultrasonic detection device positioned above the detection platform for emitting and receiving an ultrasonic wave reflected by a wafer; and a microprocessor for processing the reflected ultrasonic and transmits to a monitor.

Abstract: A device used for detecting the clamping force of a processed object and a method thereof are proposed. The device comprises a detection unit, a basis component and a pressure detection component disposed on the basis component. The basis component having the pressure detection component is closely placed between pivotal rods so that the detection unit can detect variation of electric properties of the pressure detection component to adjust the spacing between the pivotal rods, hence facilitating adjustment of the clamping force.

Abstract: A device used for detecting the clamping force of a processed object and a method thereof are proposed. The device comprises a detection unit, a basis component and a pressure detection component disposed on the basis component. The basis component having the pressure detection component is closely placed between pivotal rods so that the detection unit can detect variation of electric properties of the pressure detection component to adjust the spacing between the pivotal rods, hence facilitating adjustment of the clamping force.

Abstract: A wafer cleaning apparatus with multiple wash-heads is applied in chemical and mechanical polishing process after wafer cleaning. The wafer cleaning apparatus device includes a supporting base, which supporting base comprises a driving device and at least one fluid pipe. A rotation module is also included in the wafer cleaning apparatus. The top side of the rotation module is connected with the driving device. Besides, the rotation module comprises multiple wash-heads and at least one nozzle. The bottom side of wash-head here is contacted with the surface of the wafer. By using driving device, the rotation module can be wholly driven. Also, multiple wash-heads can rotate individually along a cleaning path for cleaning wafer. The fluid was jetted from nozzle and assistant to clean wafer through fluid pipe. The prior art of single wafer wash-head is easily to reform a cleaning dead angle in wafer cleaning process.

Abstract: The present invention provides an apparatus for detecting flaws in a wafer. The apparatus has a detection platform for holding a wafer positioned thereon, a cross-bar ultrasonic detection device positioned above the detection platform for emitting and receiving an ultrasonic wave reflected by a wafer; and a microprocessor for processing the reflected ultrasonic and transmits to a monitor.

Abstract: A humidity sensor and fabrication method thereof. In the humidity sensor of the present invention, two comb-type electrodes with a plurality of teeth are disposed on a semiconductor substrate. A SiO2 sensing film is disposed between the teeth of the two comb-type electrodes on the substrate. A predetermined voltage is applied between the two comb-type electrodes, a leakage current between the two electrodes is detected, and the humidity in the environment is measured according thereto.

Abstract: A humidity sensor and fabrication method thereof. In the humidity sensor of the present invention, two comb-type electrodes with a plurality of teeth are disposed on a semiconductor substrate. A SiO2 sensing film is disposed between the teeth of the two comb-type electrodes on the substrate. A predetermined voltage is applied between the two comb-type electrodes, a leakage current between the two electrodes is detected, and the humidity in the environment is measured according thereto.

Abstract: A polishing pad showing intrinsic abrasion automatically during processing. In the pad of the present invention, a polishing substrate has a first surface, a first index a first predetermined distance from the first surface, a second index a second predetermined distance from the first surface, and a third index a third predetermined distance from the first surface, wherein the third predetermined distance exceeds the second predetermined distance, and the second predetermined distance exceeds the first predetermined distance. The polishing pad shows the first pattern when abrasion from the first surface exceeds the first predetermined distance, and shows the first and second patterns when abrasion from the first surface exceeds the second predetermined distance. The first, second and third patterns appear when abrasion from the first surface exceeds the third predetermined distance.