Abstract: A dicing process is provided for cutting a wafer along a plurality of predetermined scribe lines into a plurality of dies that are releasably adhered to a release film. The dicing process includes: (a) disposing a wafer-breaking carrier on a supporting device, the wafer-breaking carrier having a chipping unit; (b) disposing the wafer above the supporting device such that the chipping unit is at a position corresponding to the scribe lines; and (c) adhering a release surface of the release film to the wafer by applying a force to the release film to contact the chipping unit of the wafer-breaking carrier with the wafer, such that the wafer is split along the scribe lines into the dies.

Abstract: A light emitting diode and a fabricating method thereof are provided. A first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer with a first surface are sequentially formed a substrate. Next, the first surface is treated during a surface treatment process to form a current-blocking region which extends from the first surface to the light emitting layer to a depth of 1000 angstroms. Afterward, a first electrode is formed above the current-blocking region of the second-type semiconductor layer, and a second electrode is formed to electrically contact to the first-type semiconductor layer. Since the current-blocking region is formed with a determined depth within the second-type semiconductor layer, the light extraction efficiency of the light emitting diode may be increased.

Abstract: A light emitting diode and a fabricating method thereof are provided. A first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer with a first surface are sequentially formed a substrate. Next, the first surface is treated during a surface treatment process to form a current-blocking region which extends from the first surface to the light emitting layer to a depth of 1000 angstroms. Afterward, a first electrode is formed above the current-blocking region of the second-type semiconductor layer, and a second electrode is formed to electrically contact to the first-type semiconductor layer. Since the current-blocking region is formed with a determined depth within the second-type semiconductor layer, the light extraction efficiency of the light emitting diode may be increased.

Abstract: A sprinkler guard includes a hollow protector body adapted for being secured at the ground to encircle a sprinkler within a protector cavity and a retention slot formed at a bottom portion of the protector body and upwardly extended from a bottom opening edge of the protector body. The protector body is adapted for riding at an underground pipeline to retain the sprinkler within the protector body in position without blocking a sprinkling angle of the sprinkler within the protector cavity, wherein the retention slot is adapted for the underground pipeline passing through to let the sprinkler receiving within the protector cavity when the bottom portion of the protector body is inserted into the ground.