Abstract: An interconnect structure and methods of forming the same are described. In some embodiments, the structure includes a first intermetal dielectric (IMD) layer disposed over a plurality of conductive features and a first passive component disposed on the first IMD layer in a first region of the substrate. The structure further includes a second passive component disposed on the first IMD layer in a second region of the substrate. The second passive component includes a first conductive layer, and the first conductive layer has a first thickness. The structure further includes a second IMD layer disposed on the first passive component in the first region and on the second passive component and a portion of the first IMD layer in the second region. The second IMD layer has a second thickness ranging from about five times to about 20 times the first thickness.

Abstract: A method includes providing a substrate of a first conductivity type, the substrate including a first circuit region and a second circuit region; forming a first well region of a second conductivity type in the first circuit region of the substrate; forming a first doped region of the second conductivity type in the first well region; forming a diode in the second circuit region of the substrate; forming a first transistor and a second transistor over the substrate in the first circuit region and the second circuit region, respectively; forming a discharge structure over the substrate to electrically couple the first doped region to the diode; and forming a metallization layer over the discharge structure to electrically couple the first transistor to the second transistor subsequent to the forming of the diode, wherein charges accumulated in the first well region are drained to the substrate through the discharge structure.

Abstract: An embodiment is an integrated circuit (IC) structure. The structure comprises a deep n well in a substrate, a first pickup device in the deep n well, a first signal device in the deep n well, a dissipation device in the substrate, a second signal device in the substrate, a first electrical path between the first pickup device and the dissipation device, and a second electrical path between the first signal device and the second signal device. The dissipation device is outside of the deep n well, and the second signal device is outside of the deep n well. A highest point of the first electrical path is lower than a highest point of the second electrical path.

Abstract: An embodiment is an integrated circuit (IC) structure. The structure comprises a deep n well in a substrate, a first pickup device in the deep n well, a first signal device in the deep n well, a dissipation device in the substrate, a second signal device in the substrate, a first electrical path between the first pickup device and the dissipation device, and a second electrical path between the first signal device and the second signal device. The dissipation device is outside of the deep n well, and the second signal device is outside of the deep n well. A highest point of the first electrical path is lower than a highest point of the second electrical path.

Abstract: A photosensor device with dark current cancellation is disclosed. The photosensor device comprises a first and second photosensors, a first and second current replication circuits and a digital signal generator. The first photosensor has a first dark current but does not receive any photo signal. The second photosensor has a second dark current and receives a photo signal to generate photocurrent according to the photo signal. The first current replication circuit generates a replicated current according to the first dark current and injects the replicated current into the second photosensor for cancelling the second dark current from the second photosensor. The second photosensor is coupled to the second current replication circuit which generates charge and discharge currents according to the photocurrent of the second photosensor.

Abstract: A photosensor device with dark current cancellation is disclosed. The photosensor device comprises a first and second photosensors, a first and second current replication circuits and a digital signal generator. The first photosensor has a first dark current but does not receive any photo signal. The second photosensor has a second dark current and receives a photo signal to generate photocurrent according to the photo signal. The first current replication circuit generates a replicated current according to the first dark current and injects the replicated current into the second photosensor for cancelling the second dark current from the second photosensor. The second photosensor is coupled to the second current replication circuit which generates charge and discharge currents according to the photocurrent of the second photosensor.

Abstract: A liquid crystal on silicon integrated circuit (LCOS IC) and electronic device using the same is provided. The electronic device comprises an LCOS IC, a processor and a cooler. The LCOS IC comprising a temperature sensor embedded in the LCOS IC for sensing a temperature and outputting a temperature sensing signal according to the temperature. The processor is coupled to the LCOS IC for receiving the temperature sensing signal and outputting a cooler control signal according to the temperature sensing signal. The cooler is coupled to the processor for receiving the cooler control signal and adjusting the cooler accordingly.

Abstract: A gamma reference voltages generating circuit is disclosed in the present invention. The gamma reference voltages generating circuit comprises a voltage provider, a plurality of first digital-to-analog converters and a plurality of second digital-to-analog converters. The voltage provider generates a plurality of first supply voltages and a plurality of second supply voltages according to a first gamma reference voltage. The first digital-to-analog converters are electrically coupled to the first supply voltages for generating a plurality of second gamma reference voltages. The second digital-to-analog converters are electrically coupled to the second supply voltages for generating a plurality of third gamma reference voltages.

Abstract: A gamma reference voltages generating circuit is disclosed in the present invention. The gamma reference voltages generating circuit comprises a voltage provider, a plurality of first digital-to-analog converters and a plurality of second digital-to-analog converters. The voltage provider generates a plurality of first supply voltages and a plurality of second supply voltages according to a first gamma reference voltage. The first digital-to-analog converters are electrically coupled to the first supply voltages for generating a plurality of second gamma reference voltages. The second digital-to-analog converters are electrically coupled to the second supply voltages for generating a plurality of third gamma reference voltages.

Abstract: The present invention discloses a display driving method and apparatus using the same. The driving method of driving a display panel having pixel cells formed at each intersection of a plurality of scan lines and a plurality of data lines, said method comprising: simultaneously driving the pixel cells corresponding to the nth to (n+m)th scan lines according to a plurality of first pixel signals corresponding to the nth scan line; and simultaneously driving the pixel cells corresponding to the (n+1)th to (n+m+1)th scan lines according to a plurality of second pixel signals corresponding to the (n+1)th scan line wherein n is a positive integer and m is a positive integer.

Abstract: A reflective type liquid crystal panel including a substrate, an array of transistors, capacitors, metal patterns, conductive walls, reflective pixel electrodes, an opposite substrate, and a liquid crystal layer is provided. The transistors and the capacitors are disposed on the substrate, and the capacitors are surrounding drain terminals of the corresponding transistors respectively. The metal patterns cover the corresponding transistors and overlap the corresponding capacitors respectively, and the metal patterns are electrically connected to the corresponding drain terminals respectively. The conductive walls surround the corresponding transistors and are connected between the corresponding metal patterns and the corresponding capacitors respectively. The reflective pixel electrodes are disposed over the corresponding metal patterns and electrically connected to the corresponding drain terminals respectively.

Abstract: A gamma voltage generator comprises a multiplexer circuit and a control circuit is provided. The multiplexer circuit receive a plurality of voltages and outputting a part of the voltages in accordance to a plurality of polarity signals, respectively. The control circuit outputs the polarity signals at different time points such that the output voltages do not change their polarities at the same time.

Abstract: An LCOS IC and electronic device using the same is provided. The electronic device comprises an LCOS IC, a processor and a cooler. The LCOS IC comprising a temperature sensor embedded in the LCOS IC for sensing a temperature and outputting a temperature sensing signal according to the temperature. The processor is coupled to the LCOS IC for receiving the temperature sensing signal and outputting a cooler control signal according to the temperature sensing signal. The cooler is coupled to the processor for receiving the cooler control signal and adjusting the cooler accordingly.

Abstract: A reflective type liquid crystal panel including a substrate, an array of transistors, capacitors, metal patterns, conductive walls, reflective pixel electrodes, an opposite substrate, and a liquid crystal layer is provided. The transistors and the capacitors are disposed on the substrate, and the capacitors are surrounding drain terminals of the corresponding transistors respectively. The metal patterns cover the corresponding transistors and overlap the corresponding capacitors respectively, and the metal patterns are electrically connected to the corresponding drain terminals respectively. The conductive walls surround the corresponding transistors and are connected between the corresponding metal patterns and the corresponding capacitors respectively. The reflective pixel electrodes are disposed over the corresponding metal patterns and electrically connected to the corresponding drain terminals respectively.

Abstract: The invention relates to a data driving system and a display, wherein the data driving system for driving a display panel, comprises a Gamma reference voltage generator, a common voltage generator, and a plurality of data drivers. The Gamma reference voltage generator is used for generating a plurality of Gamma reference voltages. The common voltage generator is used for dynamically generating a common voltage according to a first control signal. The data drivers are used for receiving the Gamma reference voltages and the common voltage to generate corresponding display signals to the display panel. Therefore, the data driving system of the present invention can dynamically adjust the common voltage to match with the change of the liquid crystal characteristic of the liquid crystal display.